2002-2013 Microchip Technology Inc. DS20001420F-page 1
TC4421/TC4422
Features:
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A Maximum
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Propagatio n Del ays: 30 ns (Typ ical)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (Typical)
- With Logic ‘0’ Input – 55 µA (Typical)
• Low Output Impedance: 1.4 (Typical)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs up to 5V
• Pin-Com p a tib le wi th the TC442 0/TC442 9
6A MOSFET Driver
• Space-saving 8-Pin 6x5 DFN-S Pack age
Applications:
• Line Drivers for Extra Heavily-Loaded Lines
• Pul se Gene rator s
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
General Description:
TC4421/TC4422 are high-current buffers/drivers
capable of driving large MOSFETs and IGBTs.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slow ly rising or fa lling waveform s.
With both surface-mount and pin-through-hole
packages and four operating temperature range
offerings, the TC4421/TC4422 family of 9A MOSFET
drivers fits into any application where high gate/line
capac itance drive is required.
Package Types(1)
VDD
5
6
7
8OUTPUT
GND
OUTPUT
TC44218-Pin PDIP/
1
2
3
4
VDD
INPUT
NC
GND
5-Pin TO-220
VDD
GND
INPUT
GND
OUTPUT
TC4421
TC4422
Tab is
Common
to VDD
Note 1: Duplicate pins must both be connected for proper operation.
2: Includes electrically isolated Exposed Thermal Pad (EP), see Table 3-1.
TC4422
VDD
OUTPUT
GND
OUTPUT
SOIJ 8-Pin 6x5 DFN-S(2)
VDD
INPUT
NC
GND
VDD
OUTPUT
GND
OUTPUT
TC4421 TC4422
VDD
OUTPUT
GND
OUTPUT
1
2
3
4
8
7
6
5
EP
9
9A High-Speed MOSFET Drivers
TC4421/TC4422
DS20001420F-page 2 2002-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
Output
Input
GND
VDD
300 mV
4.7V
C=25pF
Inverting
Non-Inverting
200 µA
TC4421
TC4422
2002-2013 Microchip Technology Inc. DS20001420F-page 3
TC4421/TC4422
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage.....................................................+20V
Input Voltage....................(VDD + 0.3V) to (GND – 5V)
Input Current (VIN >V
DD)...................................50 mA
Package Power Dissipation (TA70°C)
5-Pin TO-220....................................................1.6W
DFN-S .......................................................... Note 2
PDIP............................................................730 mW
SOIJ ............................................................750 mW
Package Power Dissipation (TA25°C)
5-Pin TO-220 (with heatsink)..........................12.5W
Thermal Impedances (to case)
5-Pin TO-220 RJ-C ......................................10°C/W
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the devi ce. These are stress ratin gs only and fun ctional
operatio n of the devic e at these or an y other con ditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwi se noted, TA= +25°C with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High-I np ut Voltage VIH 2.4 1.8 — V
Logic ‘0’, Low-In put Voltage VIL —1.30.8V
Input Current IIN –10 — +10 µA 0V VIN VDD
Output
High-Out put Volt age VOH VDD – 0.025 — — V DC test
Low-Output Voltage VOL — — 0.025 V DC test
Output Re si stanc e, High ROH —1.4—IOUT =10mA, V
DD = 18V
Output Re si stanc e, Low ROL —0.91.7IOUT =10mA, V
DD = 18V
Peak Output Current IPK —9.0—AV
DD =18V
Contin uou s Ou tput Current IDC 2 — — A 10V VDD 18V, TA=+25°C
(TC4421/TC4422 CAT only) (Note 3)
Latch-Up Prote cti on
Withstand Reverse Current IREV — > 1.5 — A Duty cycle 2%, t 300 µsec
Switching T ime (Note 1)
Rise Time tR—6075nsFigure 4-1, CL=10,000pF
Fall Time tF—6075nsFigure 4-1, CL=10,000pF
Delay Time tD1 —3060nsFigure 4-1
Delay Time tD2 —3360nsFigure 4-1
Power Supply
Power Supply Current IS—0.21.5mAV
IN =3V
—55150µAV
IN =0V
Operati ng Inpu t Volta ge VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
3: Tested during characterization, not production tested.
TC4421/TC4422
DS20001420F-page 4 2002-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High-I np ut Voltage VIH 2.4 — — V
Logic ‘0’, Low-In pu t Voltage VIL ——0.8V
Input Current IIN –10 — +10 µA 0V VIN VDD
Output
High-Out put Volt age VOH VDD – 0.025 — — V DC TEST
Low-Output Voltage VOL — — 0.025 V DC TEST
Output Re si stanc e, High ROH —2.43.6IOUT =10mA, V
DD = 18V
Output Re si stanc e, Low ROL —1.82.7IOUT =10mA, V
DD = 18V
Switching T ime (Note 1)
Rise Time tR— 60 120 ns Figure 4-1, CL= 10,000 pF
Fall Time tF— 60 120 ns Figure 4-1, CL= 10,000 pF
Delay Time tD1 —5080nsFigure 4-1
Delay Time tD2 —6580nsFigure 4-1
Power Supply
Power Supply Current IS——3mAV
IN =3V
——0.2 V
IN =0V
Operati ng Inpu t Volta ge VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
TE MPERATURE CHARACTE RISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) TA0—+70°C
Specified Temperature Range (E) TA–40 — +85 °C
Specified Temperature Range (V) TA–40 — +125 °C
Maximum Junction Tempe ratur e TJ— — +150 °C
Storage Temperature Range TA–65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 JA —39.5—°C/W
Thermal Resistance, 8L-6x5 DFN-S JA — 35.7 — °C/W Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP JA —89.3—°C/W
Thermal Resistance, 8L-SOIJ JA —117—°C/W
2002-2013 Microchip Technology Inc. DS20001420F-page 5
TC4421/TC4422
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Ris e and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay vs.
Supply Voltage.
Note: The gra phs and tab les prov ided fo llow ing this note are a sta tistic al sum mary b ased on a limit ed numb er of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
220
200
180
160
140
120
100
80
60
40
20
04681012
14 16 18
1000 pF
4700 pF
10,000 pF
22,000 pF
t
RISE
(nsec)
V
DD
(V)
tRISE (nsec)
5V
15V
300
250
200
150
100
50
0
100 1000 10,000 100,000
10V
CLOAD (pF)
90
60
40
30
70
50
80
-40 0 40 80 120
Time (nsec)
TA (°C)
CLOAD = 10,000 pF
VDD = 15V
tFALL
tRISE
180
160
140
120
100
80
60
40
20
0
4 6 8 1012141618
1000 pF
4700 pF
10,000 pF
22,000 pF
t
FALL
(nsec)
VDD
(V)
t
FALL
(nsec)
300
250
200
150
100
50
0
100 1000 10,000
5V
10V
15V
100,000
C
LOAD
(pF)
50
810121416184
Time (nsec)
45
40
35
30
25 6
V
DD
(V)
C
LOAD
= 1000 pF
t
D1
t
D2
TC4421/TC4422
DS20001420F-page 6 2002-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
FIGURE 2-7: Su ppl y Cur rent vs .
Capacitive Load (VDD =18V).
FIGURE 2-8: Su ppl y Cur rent vs .
Capacitive Load (VDD =12V).
FIGURE 2-9: Su ppl y Cur rent vs .
Capacitive Load (VDD =6V).
FIGURE 2-10: Supply Current vs.
Frequency (VDD =18V).
FIGURE 2-11: Supply Current vs.
Frequency (VDD =12V).
FIGURE 2-12: Supply Current vs.
Frequency (VDD =6V).
220
100
200
180
160
140
120
100
80
60
40
20
0
100,00010,0001000
1.125 MHz
632 kHz
200 kHz 20 kHz
2 MHz
63.2 kH
z
ISUPPLY
(mA)
CLOAD (pF)
VDD = 18V
ISUPPLY (mA)
180
160
140
120
100
60
0
80
40
20
1.125 MHz
63.2 kHz
20 kHz
632 kHz
200 kHz
2 MHz
100 100,00010,0001000
VDD = 12V
CLOAD (pF)
I
SUPPLY (mA)
100
90
80
70
60
50
40
30
20
10
0
20 kHz
632 kHz
200 kHz
2 MHz
63.2 kHz
100 100,00010,0001000
V
DD
= 6V
C
LOAD
(pF)
Fre
q
uenc
y
(
kHz
)
180
100
80
60
40
20
0
120
140
160 22,000 pF
470 pF
10,000 pF
0.1 µF
4700 pF
10 100 1000
47,000 pF
I
SUPPLY
(mA)
V
DD
= 18V
I
SUPPLY
(mA)
Frequency (kHz)
180
100
80
60
40
20
0
120
140
160
470 pF
22,000 pF
4700 pF
10,000 pF
47,000 pF
10 100 1000
V
DD
= 12V
0.1 µF
I
SUPPLY (mA)
47,000 pF
120
40
20
0
100
4700 pF
10
Fre
q
uenc
y
(
kHz
)
100 1000
60
80
22,000 pF
470 pF
10,000 pF
10 100 1000
V
DD
= 6V
0.1 µF
2002-2013 Microchip Technology Inc. DS20001420F-page 7
TC4421/TC4422
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
FIGURE 2-13: Propagation Delay vs. Input
Amplitude.
FIGURE 2-14: Crossover Energy vs.
Supply Voltage.
FIGURE 2-15: High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-16: Propagation Delay vs.
Temperature.
FIGURE 2-17: Quiescent Supply Current
vs. Temperature.
FIGURE 2-18: Low-State Output
Resistance vs. Supply Voltage.
120
Time (nsec)
110
100
90
80
70
60
50
40
30
20
10
012345678910
Input Amplitude (V)
V
DD
= 10V
C
LOAD
= 10,000 pF
t
D1
t
D2
10-7
10-6
A•sec
NOTE:
The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
4681012141618
V
DD
(V)
10-8
6
46 81012141618
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
V
DD
(V)
T
J
= 150
°
C
T
J
= 25
°
C
R
DS(ON)
(Ω)
50
–40 –20 0 20 40 60 80 100 120–60
Time (nsec)
45
40
35
30
25
20
T
A
(°C)
t
D1
t
D2
V
DD
= 18V
C
LOAD
= 10,000 pF
V
IN
= 5V
102
-40 -20 0 20 40 60 80 100 120-60
V
DD
= 18V
Input = 1
Input = 0
I
QUIESCENT (µA)
T
J
(°C)
103
R
DS(ON)
(Ω)
46 81012141618
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
V
DD
(V)
T
J
= 150°C
T
J
= 25°C
TC4421/TC4422
DS20001420F-page 8 2002-2013 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
3.1 Supply Input (VDD)
The VDD in put is the bia s supply for the M OSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
shoul d be chos en base d on the capaciti ve load that is
being driv en . A min im um value of 1.0 µF is suggeste d.
3.2 Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3 CMOS Push-Pull Output (OUTPUT,
OUTPUT)
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4 Ground (GND)
The ground pin s are the return path for the bias current
and for the high peak currents that discharge the load
capa citor. The gro und pins should be tied into a ground
plane or have very short traces to the bias supply
source retu rn.
3.5 Exposed Thermal Pad (EP)
The expo sed therm al pad o f the 6x5 DFN -S pac kage is
not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
TABLE 3-1: PIN FUNCTION TABLE
Pin No .
PDIP, SOIJ Pin No .
6x5 DFN-S Pin No.
TO-220 Symbol Description
11— V
DD Supply input, 4.5V to 18V
2 2 1 INPUT Contr ol input, TTL/CMOS compatible input
3 3 — NC No connection
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT/OUTPUT CMOS pus h-p ull outpu t
7 7 — OUTPUT/OUTPUT CMOS push-pull outpu t
883 V
DD Supply input, 4.5V to 18V
— 9 — EP Exposed thermal pad
——TAB V
DD Thermal t ab is at the VDD potential
2002-2013 Microchip Technology Inc. DS20001420F-page 9
TC4421/TC4422
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circuits.
Inverting Driver
Non-Inverting Driver
Input
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL 10 nsec
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10% 10%
90%
+5V
+18V
0V
0V
0V
90%
26
7
54
18
CL = 10,000 pF
0.1 µF
4.7 µF
Input
VDD = 18V
Output
0.1 µF
Note: Pinout shown is for the DFN-S, PDIP and SOIJ packages.
TC4421
TC4422
TC4421/TC4422
DS20001420F-page 10 2002-2013 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
YYWWNNN
XXXXXXXXX
XXXXXXXXX
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu meric tracea bil ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is P b-free. The Pb-free JEDEC designa tor ( )
can be found on the outer packaging for this package.
Note: In the even t the full M icroc hip p art numb er cann ot be marked o n one line, it wil l
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
5-Lead TO-220 Example
TC4421CAT
1318256
OR
8-Lea d DFN-S (6x 5x0.9 mm ) Example
PIN 1
NNN
PIN 1
TC4421
EMF
1318
256
OR
8-Lead PDIP (300 mil) Example
XXXXXXXX
XXXXXNNN
YYWW
TC4421
CPA256 OR
8-Lead SOIJ (5.28 mm) Example
TC4421
ESM
1318256
TC4421
ESM ^^
1318256
3
e
OR
TC4421
CPA^^ 256
1318
3
e
TC4421
CAT ^^
1318256
3
e
TC4421
EMF ^^
1318
256
3
e
2002-2013 Microchip Technology Inc. DS20001420F-page 11
TC4421/TC4422
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2002-2013 Microchip Technology Inc. DS20001420F-page 15
TC4421/TC4422
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
TC4421/TC4422
DS20001420F-page 16 2002-2013 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2002-2013 Microchip Technology Inc. DS20001420F-page 17
TC4421/TC4422
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
TC4421/TC4422
DS20001420F-page 18 2002-2013 Microchip Technology Inc.
NOTES:
2002-2013 Microchip Technology Inc. DS20001420F-page 19
TC4421/TC4422
APPENDIX A: REVISION HISTORY
Revision F (August 2013)
The following is the list of modifications:
1. Updated package type for 8-Pin 6x5 DFN-S in
Package Types(1).
2. Updated the values in Temperature
Characteristics.
3. Updated the markings in Section 5.0, Packaging
Information.
4. Replaced all references to DFN and SOIC with
DFN-S and SOIJ, respectively.
Revision E (December 2012)
• Added a note to each package outline drawing.
TC4421/TC4422
DS20001420F-page 20 2002-2013 Microchip Technology Inc.
NOTES:
2002-2013 Microchip Technology Inc. DS20001420F-page 21
TC4421/TC4422
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC4421: 9A Hig h-Speed MOSFET Driver, Inverting
TC4422: 9A High-S peed MOSFET Driver, Non-Inverting
Temperature Range: C = 0° C to +70°C (PDIP and TO-220 Only)
E = -40°C to +85°C
V = -40°C to +125°C
Package: AT = TO-220, 5-lead (C-Temp Only)
MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA = Plastic DIP (300 mil Body), 8-lead
SM = Plastic SOIJ (208 mil Body), 8-lead
SM713 = Plastic SOIJ (208 mil Body), 8-lead
(Tape and Reel)
PB Free: G = Lead-Free device
=Blank
PART NO. XXX
PackageTemperature
Range
Device
Examples:
a) TC4421CAT: 9A High-Speed In verting
MOSFET Driver,
TO-220 package,
0°C to +70°C.
b) TC4421ESMG: 9A High-Speed Inverting
MOSFET Driver,
PB Free SOIJ p ackage,
-40°C to +85°C.
c) TC4421VMF: 9A High-Speed Inverting
MOSFET Driver,
DFN-S package,
-40°C to +125°C.
a) TC4422VPA: 9A High-Speed
Non-Invert ing MOSFET
Driver, PDIP package,
-40°C to +125°C.
b) TC4422EPA: 9A High-Speed
Non-Inverting
MOSFET Driver,
PDIP package,
-40°C to +85°C.
c) TC4422EMF: 9A High-Speed
Inverting MOSFET Driver,
DFN-S package,
-40°C to +85°C.
XXX
Tape & Reel
X
PB Free
TC4421/TC4422
DS20001420F-page 22 2002-2013 Microchip Technology Inc.
NOTES:
2002-2013 Microchip Technology Inc. DS20001420F-page 23
Information contained in this publication regarding device
applications a nd the lik e is provid ed only for your convenien ce
and may be supers ed ed by u pdates. I t is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SE EVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE, In-Circuit Serial
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver , WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-421-2
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of t he most secure famili es of its kind on the market today, when used in the
intended manner and under normal conditions.
• The re are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Mill ennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS20001420F-page 24 2002-2013 Microchip Technology Inc.
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11/29/12
