RD02MUS1B - Mitsubishi Electric Semiconductor

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

1/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

OUTLINE DRAWING

0.2+/-0.05

0.9+/-0.1

INDEX MARK

(Gate)

6.0+/-0.15

4.9+/-0.15

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

Note

( ):center value

UNIT:mm

4.6+/-0.05

3.3+/-0.05

0.8+/-0.05

1.0+/-0.05

(0.25)

2

3

1

3.5+/-0.05

2.0+/-0.05

(0.25)

(0.22) (0.22)

DESCRIPTION

RD02MUS1B is a MOS FET type transistor

specifically designed for VHF/UHF RF power

amplifiers applications.

RD02MUS1B improved a drain surge than

RD02MUS1 by optimizing MOSFET structure.

FEATURES

High power gain:

Pout>2W, Gp>16dB

@Vdd=7.2V,f=175MHz, 520MHz

High Efficiency: 65%typ. (175MHz)

High Efficiency: 65%typ. (520MHz)

APPLICATION

For output stage of high power amplifiers

In VHF/UHF band mobile radio sets.

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RoHS COMPLIANT

RD02MUS1B-101,T112is a RoHS compliant products.

RoHS compliance is indicating by the letter “G” after the Lot Marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

2/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

VDSS Drain to source voltage Vgs=0V 30 V

VGSS Gate to source voltage Vds=0V +/-20 V

Pch Channel dissipation Tc=25°C 21.9 W

Pin Input Power Zg=Zl=50Ω 0.1 W

ID Drain Current - 1.5 A

Tch Junction temperature - 150 °C

Tstg Storage temperature - -40 to +125 °C

Rth j-c Thermal resistance Junction to case 5.7 °C/W

Note: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)

LIMITS UNIT

SYMBOL PARAMETER CONDITIONS MIN TYP MAX.

IDSS Drain cutoff current VDS=17V, VGS=0V - - 100 uA

IGSS Gate cutoff current VGS=10V, VDS=0V - - 1 uA

Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V

Pout1 Output power 2 3 - W

ηD1 Drain efficiency

VDD=7.2V, Pin=50mW,

f=175MHz Idq=200mA 55 65 - %

Pout2 Output power 2 3 - W

ηD2 Drain efficiency

VDD=7.2V, Pin=50mW,

f=520MHz Idq=200mA 50 65 - %

Load VSWR tolerance

VDD=9.2V,Po=2W(Pin Control)

f=175MHz,Idq=200mA,Zg=50Ω

Load VSWR=20:1(All Phase)

No destroy -

Load VSWR tolerance

VDD=9.2V,Po=2W(Pin Control)

f=520MHz,Idq=200mA,Zg=50Ω

Load VSWR=20:1(All Phase)

No destroy -

Note: Above parameters, ratings, limits and conditions are subject to change.

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

3/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL CHARACTE RISTICS

DRAIN DISSIPATION VS.

AMBIENT TEMPERATURE

0

5

10

15

20

25

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(°C)

CHANNEL DISSIPATION

Pch(W)

On PCB(*1)

On PCB(*1) with Heat-sink

*1:The material of the PCB

Glass epoxy (t=0.6 mm)

Vds VS. Ci ss CHARACTERISTICS

0

10

20

30

40

0 5 10 15 20

Vds(V)

Ciss(pF)

Ta=+25°C

f=1MHz

Vds VS. Coss CHARACTERISTI CS

0

10

20

30

40

0 5 10 15 20

Vds(V)

Coss(pF)

Ta=+25°C

f=1MHz

Vds VS. Crss CHARACT ERISTICS

0

1

2

3

4

5

6

0 5 10 15 20

Vds(V)

Crss(pF)

Ta=+25°C

f=1MHz

Vgs-Ids CHARACTERISTICS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

012345

Vgs(V)

Ids(A),GM(S)

Ta=+25°C

Vds=7.2V

Ids

GM

Vds-I ds CHARACTERISTICS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0246810

Vds(V)

Ids(A)

Ta=+25°C Vgs=9V

Vgs=8V

Vgs=7V

Vgs=6V

Vgs=5V

Vgs=4V

Vgs=3V

Vgs=10V

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

4/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL CHARACTE RISTICS

Pin- Po CHARACTERISTICS

@f=175MHz

0

5

10

15

20

25

30

35

40

-10-5 0 5 101520

Pin(dBm)

Po(dBm) , Gp(dB) ,

Idd(A)

20

30

40

50

60

70

80

90

100

ηd(%)

Ta=+25°C

f=175MHz

Vdd=7.2V

Idq=200mA

Po

ηｄ

Gp

Pin- Po CHARACTERISTICS

@f=175MHz

0.0

1.0

2.0

3.0

4.0

0 20406080100

Pin(mW)

Pout(W) , Idd(A)

20

40

60

80

100

ηd(%)

Po

ηd

Idd

Ta=25°C

f=175MHz

Vdd=7.2V

Idq=200mA

Pin- Po CHARACTERISTICS

@f=520MHz

0

5

10

15

20

25

30

35

40

-10 -5 0 5 10 15 20

Pin(dBm)

Po(dBm) , Gp(dB) ,

Idd(A)

20

30

40

50

60

70

80

90

100

ηd(%)

Ta=+25°C

f=520MHz

Vdd=7.2V

Idq=200mA

Po

ηｄ

Gp

Pin- Po CHARACTERISTICS

@f=520MHz

0.0

1.0

2.0

3.0

4.0

0 20406080100

Pin(mW)

Pout(W) , Idd(A)

20

40

60

80

100

ηd(%)

Po

ηd

Idd

Ta=25°C

f=520MHz

Vdd=7.2V

Idq=200mA

Vdd-Po CHARACTERISTICS

@f=175MHz

0

1

2

3

4

5

6

7

35791113

Vdd(V)

Po(W)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Idd(A)

Po

Idd

Ta=25°C

f=175MHz

Pin=50mW

Idq=200mA

Zg=ZI=50 ohm

Vdd-Po CHARACTERISTICS

@f=520MHz

0

1

2

3

4

5

6

7

35791113

Vdd(V)

Po(W)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Idd(A)

Po

Idd

Ta=25°C

f=520MHz

Pin=50mW

Idq=200mA

Zg=ZI=50 ohm

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

5/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TEST CIRCUIT(f=175MHz)

TEST CIRCUIT(f=520MHz)

5mm

Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm

Note:Board material-Teflon substrate

C1,C2:1000

p

F,0.0022uF in

p

arallel

C2

L3

12mm

68OHM

19mm

RF-OUT

C1 10uF,50V

33mm 12mm

3mm

13.5mm

L1: Enameled wire 5Turns,D:0.43mm,2.46mmO.D

240pF

4.7kOHM

15mm

Vgg Vdd

62pF

RF-IN

62pF

3mm

39pF

43pF

3mm

RD02MVS1

11.5mm

10pF

L2: Enameled wire 3Turns,D:0.43mm,2.46mmO.D

L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D

L1

L2

175MHz

6.5mm

5mm

RD02MUS1B

Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8m

m

Note:Board material-Teflon substrate

C1,C2:1000pF,0.022uF in parallel

C2

L1

40.5mm

68OHM

19mm

RF-OUT

C1 10uF,50V

20mm 2mm 10mm

11mm

4.5mm

L1: Enam eled wire 9Turns,D:0.43m m,2.46mmO.D

240pF

4.7kOHM

19mm

Vgg Vdd

62pF

RF-IN

62pF

26.5mm

43pF

6pF 18pF

3mm

RD02MUS1

520MHz

B

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

6/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS

175MHz Zin*

175MHz Zout*

175MHz Zin* Zout *

Zo=50Ω

ΩΩ

Ω

Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W

Zin*=11.61+j17.88

Zout*=6.83+j5.21

Zin*: Complex conjugate of input impedance

Zout*: Complex conjugate of input impedance

520MHz Zin* Zout *

Zo=50Ω

ΩΩ

Ω

Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W

Zin*=1.20+j5.47

Zout*=5.56+j1.31

Zin*: Complex conjugate of input impedance

Zout*: Complex conjugate of input impedance

520MHz Zin*

520MHz Zout*

output impedance

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

7/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA)

Freq.

[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

100 0.847 -132.5 16.923 100.2 0.042 8.9 0.621 -118.8

135 0.828 -144.6 12.806 90.7 0.042 -0.1 0.598 -130.5

150 0.824 -148.1 11.555 87.5 0.042 -3.3 0.591 -133.7

175 0.817 -152.8 9.864 82.8 0.042 -7.6 0.590 -138.0

200 0.816 -156.2 8.579 78.6 0.041 -11.2 0.594 -141.2

250 0.816 -161.2 6.712 71.2 0.039 -17.6 0.609 -145.5

300 0.820 -164.9 5.436 64.9 0.038 -23.0 0.628 -148.8

350 0.827 -167.6 4.501 59.3 0.036 -28.2 0.653 -151.2

400 0.835 -169.9 3.813 54.0 0.034 -32.2 0.675 -153.5

450 0.844 -171.9 3.257 49.3 0.032 -36.5 0.699 -155.8

500 0.854 -173.6 2.823 44.9 0.031 -39.8 0.723 -157.7

520 0.858 -174.3 2.668 43.1 0.030 -41.1 0.732 -158.4

527 0.859 -174.7 2.613 42.6 0.030 -41.9 0.735 -158.6

550 0.862 -175.3 2.458 40.9 0.029 -43.2 0.743 -159.6

600 0.871 -176.7 2.161 37.1 0.027 -46.6 0.763 -161.5

650 0.878 -178.0 1.911 33.5 0.025 -49.5 0.781 -162.9

700 0.883 -179.4 1.701 30.4 0.024 -51.5 0.798 -164.6

750 0.890 179.4 1.522 27.3 0.022 -54.4 0.811 -166.1

800 0.897 178.3 1.368 24.4 0.021 -56.1 0.824 -167.7

850 0.899 177.0 1.238 21.7 0.019 -58.7 0.836 -169.0

900 0.905 176.0 1.123 19.3 0.018 -59.4 0.845 -170.3

950 0.907 175.1 1.025 17.1 0.016 -60.7 0.853 -171.4

1000 0.913 174.3 0.937 14.9 0.015 -62.1 0.861 -172.5

1050 0.915 173.2 0.859 12.9 0.013 -64.4 0.870 -173.5

1100 0.918 172.6 0.794 11.0 0.012 -64.9 0.874 -174.6

S11 S21 S12 S22

MITSUBISHI RF POWE R MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007

8/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead

to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit

designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable

material or (iii) prevention against any malfunction or mishap.

Keep safety first in your circuit designs!

Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or injury.

warning !