HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000. 09.15
Page No. : 1/3
HSMC Product Specifi cation
H2N5366
PNP EPITAXIAL PLANAR TRAN SISTOR
Description
The H2N5366 is designed for general purpose applications requiring
high breakdown voltages.
Features
• This device was designed for use as general purpose amplifier and switches.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temper ature................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 400 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -40 V
VCEO Collector to Emitter Voltage.................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current...................................................................................................... -500 mA
Characteristics (Ta=2 5°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA, IE=0
BVCEO -40 - - V IC=-1mA, IB=0
BVEBO -4 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-45V, IE=0
IEBO - - -100 nA VEB=-3V. IC= 0
*VCE(sat) 1 - - -250 mV IC=-50mA, IB= - 5m A
*VCE(sat)2 - - -1 V IC=-300mA, IB=-30mA
*VBE(sat)1 - - - 1.1 V IC=- 50mA, IB= -5m A
*VBE(sat)2 - - -2 V IC=-300mA, IB=-30mA
*hFE1 80 - - VCE=-1V, IC=-2mA
*hFE2 100 - - VCE=-1V, IC=-50mA
*hFE3 40 - - VCE=-5V, IC=-300mA
fT - - - M Hz VCE=-10V, IC=-10mA, f=100MHz
Cob - - 10 PF VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000. 09.15
Page No. : 2/3
HSMC Product Specifi cation
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
1 10 100 1000
Collector Curren t (mA)
hFE
VCE=1V VCE=5V
Saturation Voltage & Collect or Curren t
10
100
1000
10000
1 10 100 1000
Collector Curren t (mA)
Satu ration Voltage (mV)
VCE(sat) @ IC=10IB
Saturation Voltage & Collect or Curren t
100
1000
10000
1 10 100 1000
Collector Curren t (mA)
Satu ration Voltage (mV)
VBE(sat) @ IC=10IB
Capacit ance & Reverse-Biased Voltage
1
10
100
1 10 100
R everse Biased Vol t a ge ( V)
Capacitance (Pf)
Cob
Safe Oper at in g Area
0.01
0.1
1
10
1 10 100
Forward Voltage ( V)
Collector Curren t (mA)
PT=1ms
PT=100ms
PT=1s
PD-Ta
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200
Ambient Temper atu r e- Ta(oC)
Power Dissipation -PD(mW)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000. 09.15
Page No. : 3/3
HSMC Product Specifi cation
TO-92 Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E-
*0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controll i ng dimens ion : mill imeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin famil y, flammability soli d burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hs i n-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style : Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
