DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3357 TO-3P designed for high current switching applications. FEATURES * Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 38 A) (TO-3P) RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 38 A) * Low Ciss: Ciss = 9800 pF TYP. * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) 20 V ID(DC) 75 A ID(pulse) 300 A PT 150 W Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) PT 3.0 W Channel Temperature Tch 150 C Tstg -55 to +150 C Single Avalanche Current Note2 IAS 75 A Single Avalanche Energy Note2 EAS 562 mJ Storage Temperature Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 V 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 0.83 C/W Channel to Ambient Rth(ch-A) 41.7 C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14134EJ4V0DS00 (4th edition) Date Published March 2001 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1999, 2000 2SK3357 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 38 A 4.6 5.8 m RDS(on)2 VGS = 4.0 V, ID = 38 A 6.1 8.8 m VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 38 A 38 72 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 A Gate to Source Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Output Capacitance Gate to Source Cut-off Voltage S 9800 pF Coss 1500 pF Reverse Transfer Capacitance Crss 630 pF Turn-on Delay Time td(on) ID = 38 A, VGS(on) = 10 V, VDD = 30 V, 105 ns RG = 10 1350 ns td(off) 500 ns tf 480 ns 170 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 28 nC Gate to Drain Charge QGD 46 nC Body Diode Forward Voltage ID = 75 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = 75 A, VGS = 0 V 0.96 V Reverse Recovery Time trr IF = 75 A, VGS = 0 V, 64 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 130 nC TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10 % 0 10 % Wave Form VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet D14134EJ4V0DS tr td(off) td(on) ton tf toff 2SK3357 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 175 100 80 60 40 20 0 0 20 40 60 80 100 120 140 150 125 100 75 50 25 0 0 160 20 Tch - Channel Temperature - C 40 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 PW ID - Drain Current - A ID(pulse) d ite ) im V ) L 10 on = ( S RDt VGS (a 100 ID(DC) =1 0 10 10 DC ms Po Lim wer ite Dis d sip ati on s 0 s 1m s 10 1 TC = 25C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1000 100 Rth(ch-A) = 41.7 C/W 10 1 Rth(ch-C) = 0.83 C/W 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14134EJ4V0DS 3 2SK3357 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 500 100 TA = -50C 25C 75C 150C 10 1 400 VGS =10 V 300 4.0 V 200 100 1 2 3 VDS = 10 V 5 6 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 TA = 150C 75C 25C -50C 1 0.1 0.01 0.01 0.1 1 10 100 10 Pulsed ID = 38 A 5 0 5 0 10 VGS = 4.0 V 5 10 V 10 100 20 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 1 15 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 15 10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(th) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m 4.0 3.0 VDS - Drain to Source Voltage - V 100 VDS = 10 V Pulsed 0 2.0 1.0 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 Pulsed 0 RDS(on) - Drain to Source On-state Resistance - m | yfs | - Forward Transfer Admittance - S 0.1 1000 -50 0 50 100 150 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet D14134EJ4V0DS 2SK3357 1000 Pulsed 10 VGS = 4.0 V 10 V 8 6 4 2 ID = 38 A 0 -50 50 0 100 Pulsed VGS = 10 V 100 VGS = 0 V 10 1 0.1 0 150 Tch - Channel Temperature - C Ciss 1000 Coss Crss 100 0.1 1 10 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 10000 VGS = 0 V f = 1 MHz 10000 100 tr 1000 td(off) tf 100 td(on) 10 0.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 10 100 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/s VGS = 0 V 1.0 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 1.0 0.5 10 VGS 8 80 VDD = 48 V 30 V 12 V 60 6 4 40 VDS 20 0 20 40 60 2 80 ID = 75 A 100 120 140 160 VGS - Gate to Source Voltage - V 12 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14134EJ4V0DS 5 2SK3357 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 160 IAS = 75 A 100 EAS =5 62 m J 10 VDD = 30 V RG = 25 VGS = 20 V 0 V 1 10 100 120 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C L - Inductive Load - H 6 VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 75 A 140 Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 1000 Data Sheet D14134EJ4V0DS 2SK3357 PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 4.7 MAX. 3.20.2 Drain 2 3 5.45 7.0 Gate Protection Diode 1.00.2 0.60.1 5.45 Body Diode Gate 19 MIN. 3.00.2 1 4.50.2 20.00.2 6.0 4 2.20.2 EQUIVALENT CIRCUIT 1.5 1.0 15.7 MAX. Source 2.80.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14134EJ4V0DS 7 2SK3357 * The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4