© 1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3357
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14134EJ4V0DS00 (4th edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ★ shows major revised points.
DESCRIPTION
The 2SK3357 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•Super low on-state resistance:
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)
•Low Ciss: Ciss = 9800 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Sourc e V ol tage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±75 A
Drain Current (puls e) Note1 ID(pulse) ±300 A
Total Power Diss i pation (TC = 25°C) PT150 W
Total Power Diss i pation (TA = 25°C) PT3.0 W
Channel Temperat ure Tch 150 °C
Storage Temperature Tstg –55 t o +150 °C
Single Aval anche Current No te 2 IAS 75 A
Single Avalanche Energy Note2 EAS 562 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 0.83 °C/W
Channel to Ambient Rth(ch-A) 41.7 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3357 TO-3P
(TO-3P)
Data Sheet D14134EJ4V0DS
2
2SK3357
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Sourc e On-state Res i stance RDS(on)1 VGS = 10 V, ID = 38 A4.65.8mΩ
RDS(on)2 VGS = 4.0 V, ID = 38 A6.18.8mΩ
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Adm i t tance | yfs |V
DS = 10 V, ID = 38 A3872S
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V10
µ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V±10
µ
A
Input Capac i t ance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 9800 pF
Output Capaci tance Coss 1500 pF
Reverse Transf er Capacitanc e Crss 630 pF
Turn-on Delay Time td(on) ID = 38 A, VGS(on) = 10 V, VDD = 30 V, 105 ns
Rise Ti me trRG = 10 Ω1350 ns
Turn-off Del a y T i me td(off) 500 ns
Fall Time tf480 ns
Total Gate Charge QGID = 75 A , VDD = 48 V, VGS = 10 V 170 nC
Gate to Source Charge QGS 28 nC
Gate to Drain Charge QGD 46 nC
Body Diode Forward Voltage VF(S-D) IF = 75 A, VGS = 0 V0.96V
Reverse Recovery T i me trr IF = 75 A, VGS = 0 V, 64 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 130 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
PG.
L
V
DD
V
GS
= 20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1
s
µ
Duty Cycle ≤ 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 % 90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
td(on) trtd(off) t
f
10 %
τ
I
D
0
ton toff
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14134EJ4V0DS 3
2SK3357
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
008020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
50
75
100
125
175
150
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1 10 100
T
C
= 25˚C
Single Pulse
I
D(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V )
I
D(DC)
PW = 10 µs
100 µs
1 ms
0.1
DC
Power Dissipation
Limited
10
ms
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
R
th(ch-C)
= 0.83 ˚C/W
µµ
R
th(ch-A)
= 41.7 ˚C/W
★
Data Sheet D14134EJ4V0DS
4
2SK3357
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
123456
V
DS
= 10 V
10
1
0.1
100
1000
T
A
= −50˚C
25˚C
75˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
02.0 3.0 4.0
200
500
400
300
1.0 Pulsed
V
GS
=10 V
100
4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01 0.1 1
10
100
10 100
0.1
0.01
1
Pulsed
T
A
= 150˚C
75˚C
25˚C
−50˚C
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
0510
5
15 20
Pulsed
10
I
D
= 38 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
5
101
10
15
100 1000
Pulsed
0
V
GS
= 4.0 V
10 V
GATE CUT
-
OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(th)
- Gate Cut-off Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
−50 0 50 100 150
0
Data Sheet D14134EJ4V0DS 5
2SK3357
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0−50
2
4
6
050 100 150
I
D
= 38 A
8
10
12
10 V
V
GS
= 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
01.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
0.1
1000
10000
100000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10 10.1
1000
10000
10 100
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
040 6020 80 100 120 140 160
20
40
60
80
100
2
4
V
DS
6
10
8
V
GS
V
DD
= 48 V
30 V
12 V
I
D
= 75 A
Data Sheet D14134EJ4V0DS
6
2SK3357
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Energy - mJ
10
100
1000
1
m10
m
V
DD
= 30
V
R
G
= 25 Ω
V
GS
= 20
V
→
0
V
I
AS
= 75
A
10
µ
100
µ
1
E
AS
=
562
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
160
140
120
100
80
60
40
20
0125 150
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0 V
IAS ≤ 75 A
Data Sheet D14134EJ4V0DS 7
2SK3357
PACKAGE DRAWING (Unit: mm)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
TO-3P (MP-88)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
15.7 MAX. 3.2±0.2
4.5±0.2
6.0 1.03.0±0.2 20.0±0.219 MIN.
2.2±0.2
5.45 5.45
1.0±0.2
4
4.7 MAX.
1.5
7.0
2.8±0.10.6±0.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3357
M8E 00. 4
The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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