HEXFET® Power MOSFET
06/29/04
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθJA Junction-to-Ambient (PCB mount)** ––– 40
Thermal Resistance
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VDSS = 60V
RDS(on) = 12mΩ
ID = 84A
S
D
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Description
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
IDM Pulsed Drain Current 330
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current50 A
EAR Repetitive Avalanche Energy17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
IRF1010ESPbF
IRF1010ELPbF
D2Pak
IRF1010ES TO-262
IRF1010EL
lAdvanced Process Technology
lSurface Mount (IRF1010ES)
lLow-profile through-hole (IRF1010EL)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free
°C/W
PD - 95444
IRF1010ES/LPbF
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V
trr Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 50A
Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
84
330
A
Notes:
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 – –– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 12 mΩVGS = 10V, ID = 50A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 69 ––– ––– S VDS = 25V, I D = 50A
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, V GS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 10 0 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge –– – ––– 1 3 0 ID = 50A
Qgs Gate-to-Source Charge ––– –– – 28 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– –– – 44 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 30V
trRise Time ––– 78 ––– ID = 50A
td(off) Turn-Off Delay Time ––– 48 ––– RG = 3.6Ω
tfFall Time ––– 53 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 3210 ––– VGS = 0V
Coss Output Capacitance ––– 690 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 1 40 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy––– 1180320mJ IAS = 50A, L = 260µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A, VGS =10V
(See Figure 12)
ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
IRF1010ES/LPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDT H
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4 5 6 7 8 9 10 11
V = 2 5 V
20µs PULSE WIDTH
DS
V , Gate-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C )
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
84A
IRF1010ES/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
020 40 60 80 100 120 140
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
50A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
1000
0.0 0.6 1.2 1.8 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100
VDS, Dr ain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
1 10 100 1000
VDS , Drain-t oSource Voltage (V )
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175° C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF1010ES/LPbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 17
5
0
20
40
60
80
100
T , Case Temperature ( C )
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. D u ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , R ectangular Pulse Dura t ion (s ec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF1010ES/LPbF
6www.irf.com
QG
QGS QGD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150 175
0
200
400
600
800
Starting T , Junction Tempera t ur e ( C)
E , Single Pulse Avalanche Energy ( m J)
J
AS
°
ID
TOP
BOTTOM
20A
35A
50A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
IRF1010ES/LPbF
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Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRF1010ES/LPbF
8www.irf.com
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
po s ition indicat es " L ead-F ree"
F530S
THIS IS AN IR F53 0S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSE MBLY LINE "L"
ASSEMBLY
LOT CODE
INT ERNATIONAL
RECTIFIER
LOGO
PART NUMBE
R
DATE CODE
YEAR 0 = 200 0
WEEK 02
LINE L
OR
F530S
A = AS S E MB LY S IT E CODE
WE EK 02
P = D E SIGNAT ES L EAD-FREE
PRODUCT (OPT I ONAL )
RECTIFIER
INTERNATIONAL
LOGO
LOT C ODE
AS S E MB L Y YEAR 0 = 2000
DATE CODE
PART NU MBER
IRF1010ES/LPbF
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TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
Note: "P" in ass e mbly line
pos ition indicates "L ead-F ree"
IN TH E ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEE K 19
YEAR 7 = 1997
PAR T NUMBE R
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL )
P = DE S IGNAT ES LE AD-FRE E
A = AS S EMB L Y S IT E CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR
IRF1010ES/LPbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (. 073)
1.65 (. 065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10. 90 ( .42 9)
10. 70 ( .42 1) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24. 40 ( . 961 )
NOTES :
1. COMFORMS TO EIA-418.
2. CONT ROL L IN G DIM EN S IO N : M I L L IM ET E R.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTO RTION @ OUTER ED GE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
