2003. 7. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB772
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
·Complementary to KTD882.
MAXIMUM RATING (Ta=25℃)
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
OP
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Φ3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
123
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* Pulse Test : Pulse Width≤350μS, Duty Cycle≤2% Pulsed
Note: hFE(2) Classification O:100～200 , Y:160～320 , GR:200～400
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current
DC IC-3
A
Pulse (Note) ICP -7
Base Current (DC) IB-0.6 A
Collector Power
Dissipation
Ta=25℃PC
1.5
W
Tc=25℃10
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -1 μA
Emitter-Cut-off Current IEBO VEB=-3V, IC=0 - - -1 μA
DC Current Gain *
hFE(1) VCE=-2V, IC=-20mA 30 220 -
hFE(2) (Note) VCE=-2V, IC=-1A 100 160 400
Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A --0.3 -0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=-2V, IB=-0.2A --1.0 -2.0 V
Current Gain Bandwidth Product fTVCE=-5V, IC=-0.1A - 80 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 55 - pF
Note : Pulse Width ≦10mS, Duty Cycle≦50%.
2003. 7. 24 2/3
KTB772
Revision No : 4
0
COLLECTOR CURRENT IC (A)
-16-12-8 -20-4
COLLECTOR-EMITTER VOLTAGE VCE (V)
0
IC - VCE
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (mA)
hFE - IC
SATURATION VOLTAGE
VCE(sat), VBE(sat), (mV)
COLLECTOR CURRENT IC (mA)
VCE(sat),VBE(sat) - IC
COLLECTOR CURRENT IC (A)
-3
-5
1
COLLECTOR-EMITTER VOLTAGE VCE (V)
31030
SAFE OPERATING AREA
-0.4
-1.0
-1.2
-1.6
1
5
10
30
50
100
300
-0.01
1K
3
500
-10
-3-0.3
-0.1 -1
COLLECTOR CURRENT IC (A)
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-10
100 300 1
K
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
fT - IC
CURRENT GAIN BANDWIDTH PRODUCT
fT (MHz)
1
5
10
50
30
100
300
500
1K
-100 -1K -3K
V =-2V
CE
-1K
-10
-1
-100
-500
-1K
-3
-10
-30
-100
-30 -300 -3K
-0.03
V =-5V
CE
I MAX.
(PULSED)
C
I MAX.
(CONTINUOUS)
C
DC OPERATION
Tc=25 C
100µS
1mS
10mS
I =-1mA
B
I =-2mA
B
I =-3mA
B
I =-4mA
B
I =-5mA
B
I =-6mA
B
I =-7mA
B
I =-8mA
B
I =-9mA
B
I =-10mA
B
CAPACITANCE Cob (pF)
-1
1
3
5
10
300
500
100
30
50
1K
COLLECTOR-BASE VOLTAGE VCB (V)
-3 -30 -100 -300 -1K
Cob - VCB
I =0
E
f=1MHz
-5K
BE
V (sat)
V (sat)
CE
I /I =10
C B
-1.8
-300-30-1 -3 -10
3
-3
-5
-50
-300
-3K
-10K
-10
2003. 7. 24 3/3
KTB772
Revision No : 4
0
DERATING dT(%), IC
200150100500
dT - Tc
20
80
100
140
160
40
60
120
S/b LIMITED
DISSIPATION LIMITED
0
POWER DISSIPATION PC (W)
0
2
4
6
10
12
8
14
16
50 100 200150
Pc - Tc
CASE TEMPERATURE Tc
(
C
)
CASE TEMPERATURE Tc ( C)
