Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
APM9950K
Pin Configuration
Ordering and Marking Information
Features
Applications
•60V/8A,
RDS(ON)=18.5mΩ (typ.) @ VGS=10V
RDS(ON)=26mΩ (typ.) @ VGS=4.5V
•Super High Dense Cell Design
•Reliable and Rugged
•Lead Free and Green Devices Available
(RoHS Compliant)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
Top View of SOP-8
N-Channel MOSFET
APM9950
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G: Halogen and Lead Free Device
APM9950 K: APM9950
XXXXX XXXXX - Date Code
Assembly Material
(2)
G1
S1
(1)
(8)
D1 (7)
D1
(4)
G2
S2
(1)
(6)
D2 (5)
D2
•Power Management in DC/DC Converter,
DC/AC Inverter Systems.
S1G1S2G2
D1D1D2D2
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw2
APM9950K
Absolute Maximum Ratings
Symbol
Parameter Rating Unit
VDSS Drain-Source Voltage 60
VGSS Gate-Source Voltage ±20 V
ID* Continuous Drain Current 8
IDM* 300µs Pulsed Drain Current VGS=10V 30 A
IS* Diode Continuous Forward Current 2 A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Maximum Power Dissipation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Drain-Source Avalanche Energy, L=0.1mH 20 mJ
Note：*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM9950K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA 60 - - V
VDS=48V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current
TA=25°C
- - 30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.5 2 3 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100
nA
VGS=10V, IDS=8A - 18.5
23
RDS(ON)a
Drain-Source On-state Resistance
VGS=4.5V, IDS=5A - 26 34 mΩ
Diode Characteristics
VSDa Diode Forward Voltage ISD=2A, VGS=0V - 0.85
1.3 V
trr Reverse Recovery Time - 26 - ns
Qrr Reverse Recovery Charge ISD=8A, dlSD/dt=100A/µs - 33 - nC
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw3
APM9950K
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9950K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Dynamic Characteristics b
Ciss Input Capacitance - 1480
-
Coss Output Capacitance - 140
-
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz - 125
-
pF
td(ON) Turn-on Delay Time - 11 21
Tr Turn-on Rise Time - 10 19
td(OFF) Turn-off Delay Time - 46 84
Tf Turn-off Fall Time
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω - 15 28
ns
Gate Charge Characteristics b
Qg Total Gate Charge - 43 60
Qgs Gate-Source Charge - 6 -
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=8A - 12 -
nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw4
APM9950K
Typical Operating Characteristics
-ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
-VDS - Drain - Source Voltage (V)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)-ID - Drain Current (A)
Tj - Junction Temperature (°C)
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
020 40 60 80 100 120 140 160
0
2
4
6
8
10
TA=25oC,VG=10V
0.01 0.1 1 10 100 300
0.01
0.1
1
10
100
300µs
Rds(on) Limit
1s
TA=25oC
10ms
1ms
100ms
DC
1E-4 1E-3 0.01 0.1 110 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw5
APM9950K
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
-ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
-VDS - Drain-Source Voltage (V)
-ID - Drain Current (A)
Output Characteristics
-VGS - Gate - Source Voltage (V)
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
Gate-Source On Resistance
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
3
6
9
12
15
18
21
24
27
30
4V
3.5V
3V
VGS= 4.5,5,6,7,8,9,10V
0 5 10 15 20 25 30
8
12
16
20
24
28
32
36
40
VGS=4.5V
VGS=10V
2 3 4 5 6 7 8 9 10
10
15
20
25
30
35
40
45
50
IDS=8A
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 IDS= 250µA
Typical Operating Characteristics (Cont.)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw6
APM9950K
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
-VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
-IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
-VGS - Gate - source Voltage (V)
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS = 10V
IDS = 8A
RON@Tj=25oC: 18.5mΩ
0.0 0.3 0.6 0.9 1.2 1.5 1.8
0.1
1
10
30
Tj=150oC
Tj=25oC
0 5 10 15 20 25 30 35 40
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Frequency=1MHz
Crss Coss
Ciss
0 5 10 15 20 25 30 35 40 45
0
1
2
3
4
5
6
7
8
9
10 VDS=30V
IDS= 8A
Typical Operating Characteristics (Cont.)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw7
APM9950K
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
DUT
0.01Ω
tp
VDD
VDS L
IL
RG
EAS
VDD
tAV
IAS
VDS
tpVDSX(SUS)
VDD
RD
DUT
VGS
VDS
RG
tp
td(on) trtd(off) tf
VGS
VDS
90%
10%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw8
APM9950K
Package Information
SOP-8
D
e
E
E1
SEE VIEW A
cb
h X 45
°
A
A1A2
L
VIEW A
0.25
SEATING PLANE
GAUGE PLANE
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
S
Y
M
B
O
LMIN. MAX.
1.75
0.10
0.17 0.25
0.25
A
A1
c
D
E
E1
e
h
L
MILLIMETERS
b0.31 0.51
SOP-8
0.25 0.50
0.40 1.27
MIN. MAX.
INCHES
0.069
0.004
0.012 0.020
0.007 0.010
0.010 0.020
0.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0
°
8
°
0
°
8
°
3.80
5.80
4.80
4.00
6.20
5.00 0.189 0.197
0.228 0.244
0.150 0.157
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw9
APM9950K
Application
A H T1 C d D W E1 F
330.0±
2.00 50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
12.0±0.30
1.75±0.10
5.5±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
SOP-8
4.0±0.10
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±0.20
5.20±0.20
2.10±0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
SOP-8 Tape & Reel 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw10
APM9950K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw11
APM9950K
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL) 183 °C
60-150 seconds 217 °C
60-150 seconds
Peak package body Temperature
(Tp)* See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc) 20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2010 www.anpec.com.tw12
APM9950K
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
