PolarHVTM HiPerFET Power MOSFET IXFH 22N50P IXFV 22N50P IXFV 22N50PS = 500 V = 22 A 270 m 200 ns VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M 500 500 V V VGS VGSM Continuous Transient 30 40 V V ID25 IDM TC = 25 C TC = 25 C, pulse width limited by TJM 22 55 A A IAR EAR EAS TC = 25 C TC = 25 C TC = 25 C 22 30 750 A mJ mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 10 10 V/ns PD TC = 25 C 350 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg TL TSOLD Md 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Weight TO-247 PLUS220 & PLUS220SMD g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 500 VGS(th) VDS = VGS, ID = 2.5 mA 3.0 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % TJ = 125 C PLUS220 (IXFV) G G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features l V l 5.5 V l 10 nA 5 250 A A 270 m D (TAB) S PLUS220SMD (IXFV...S) International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l (c) 2006 IXYS All rights reserved D 300 C 260 C 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions (TJ = 25 C, unless otherwise specified) D (TAB) Easy to mount Space savings High power density DS99358E(03/06) IXFH 22N50P IXFV 22N50P IXFV 22N50PS Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test Ciss Coss 20 S 2630 pF 310 pF 27 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) TO-247 (IXFH) Outline 1 2 3 22 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 25 ns td(off) RG = 10 (External) 72 ns Terminals: 1 - Gate 3 - Source 21 ns Dim. 50 nC 16 nC 18 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 0.35 C/W (TO-247 & PLUS220) C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 22 A ISM Repetitive 55 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr IF = 22A, -di/dt = 100 A/s QRM IRM VR = 100V, VGS = 0 V 200 0.7 7 ns C A IXYS reserves the right to change limits, test conditions, and dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXFV) Outline PLUS220SMD (IXFV...S) Outline IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 2 - Drain Tab - Drain 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25C @ 25C 22 55 VGS = 10V 20 16 40 14 35 12 6V 10 8V 45 I D - Amperes I D - Amperes 18 VGS = 10V 50 8V 7V 8 6 7V 30 25 6V 20 15 4 10 5V 2 5 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 Fig. 3. Output Characteristics 22 2.8 R D S ( o n ) - Normalized 7V I D - Amperes 16 6V 14 12 10 8 5V 6 4 21 24 27 30 VGS = 10V 2.5 2.2 I D = 22A 1.9 1.6 I D = 11A 1.3 1 0.7 2 0 0.4 0 2 4 6 8 10 12 V D S - Volts 14 16 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 24 3.1 2.8 VGS = 10V 20 TJ = 125 C 2.5 I D - Amperes R D S ( o n ) - Normalized 18 3.1 VGS = 10V 18 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125C 20 12 V D S - Volts V D S - Volts 2.2 1.9 1.6 1.3 TJ = 25 C 16 12 8 4 1 0 0.7 0 5 10 15 20 25 30 35 I D - Amperes (c) 2006 IXYS All rights reserved 40 45 50 55 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 8. Transconductance Fig. 7. Input Adm ittance 35 40 30 35 g f s - Siemens I D - Amperes TJ = -40 C 30 25 20 15 TJ = 125 C 10 25 C 125 C 20 15 10 -40 C 5 25 C 25 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 30 35 40 10 60 VG S - Volts 50 I S - Amperes 25 Fig. 10. Gate Charge 70 40 30 TJ = 125 C 9 VDS = 250V 8 I D = 11A 7 I G = 10mA 6 5 4 3 20 TJ = 25 C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 V S D - Volts 5 10 15 20 25 30 35 40 45 50 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1MHz R DS(on) Limit C iss 1000 I D - Amperes Capacitance - picoFarads 20 I D - Amperes C oss 25s 100s 10 1ms 100 TJ = 150C DC 10ms TC = 25C C rss 1 10 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 13. Maxim um Transient Therm al Resistance R ( t h ) J C - C / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds (c) 2006 IXYS All rights reserved 100 1000