© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C22A
IDM TC= 25°C, pulse width limited by TJM 55 A
IAR TC= 25°C22A
EAR TC= 25°C30mJ
EAS TC= 25°C 750 mJ
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 350 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
PLUS220 & PLUS220SMD 4 g G = Gate D = Drain
S = Source TAB = Drain
DS99358E(03/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 2.5 mA 3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±10 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 270 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
IXFH 22N50P
IXFV 22N50P
IXFV 22N50PS
VDSS = 500 V
ID25 = 22 A
RDS(on) ≤≤
≤≤
≤ 270 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200 ns
TO-247 AD (IXFH)
G
S
D
PLUS220 (IXFV)
G
S
PLUS220SMD (IXFV...S)
D (TAB)
D (TAB)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, pulse test 20 S
Ciss 2630 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 310 pF
Crss 27 pF
td(on) 22 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 25 ns
td(off) RG = 10 Ω (External) 72 ns
tf21 ns
Qg(on) 50 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 16 nC
Qgd 18 nC
RthJC 0.35°C/W
RthCS (TO-247 & PLUS220) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 22 A
ISM Repetitive 55 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 22A, -di/dt = 100 A/µs 200 ns
QRM VR = 100V, VGS = 0 V 0.7 µC
IRM 7A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-247 (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV...S) Outline
© 2006 IXYS All rights reserved
IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
5
10
15
20
25
30
35
40
45
50
55
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
7V
6V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
14
16
18
20
22
0246810121416
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
22
01234567
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 22A
I
D
= 11A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
4
8
12
16
20
24
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 11A
I
G
= 10mA
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
3.5 4 4.5 5 5.5 6 6.5 7
V
G S
- Volts
I
D
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30 35 40
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DCT
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
Fig. 13. Maxim um Transient Therm al Resistance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse Width - milliseconds
R ( t h ) J C - ºC / W
IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
