RB731XN
Diodes
Rev.B 1/3
Schottky barrier diode
RB731XN
zApplications
General rectification
zFeatures
1)
Small power mold ty pe.
(UMD6)
2) Low V
F
3) High reliability
zExternal dimensions (Unit : mm)
zLand size figure
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(5)(6) (4)
1.3±0.1
0.65 0.65
(1) (3)(2)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Eac h lead has s am e dim ens ion
UMD6
0.35
0.9
1.6
0.650.65
zStructure
zTaping dimensions (Unit : mm)
2.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.1±0.1
2.45±0.1
2.4±0.1
5.5±0.2
1.15±0.1
2.4±0.1
0.3±0.1
0～0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
RM
Limits
40
Unit
V
I
O
30 mA
V
I
FSM
200 mA
Tj 125 °C
Tstg −40 to +125 °C
∗ Rating for each diode Io/3
V
R
40
Reverse voltage (repetitive peak)
Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature
Reverse voltage (DC)
∗
∗
zElectrical characteristic (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
F
−−
−
0.37 V I
F
=1mA
Reverse current I
R
−1µAV
R
=10V
2
Capacitance between terminal Ct −−pF V
R
=1V, f=1MHz
RB731XN
Diodes
Rev.B 2/3
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0.01
0.1
1
10
100
1000
0102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
1
2
3
4
5
6
7
8
9
10
AVE:2.52pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm 1cyc
0
5
10
15
20
110100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1 10 100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
Sin(θ＝180)
D=1/2
DC
0
0.001
0.002
0.003
0102030
Sin(θ＝180)
DC
0.1
1
10
0 5 10 15 20 25 30 35
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25℃
IF=1mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
zElectrical characteristic curves
AVE:0.083nA
Ta=25℃
VR=10V
n=30pcs
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
RB731XN
Diodes
Rev.B 3/3
A)
FO
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
RWARD CURRENT:Io(
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Per chip
DC
Sin(θ＝180)
D=1/2
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Per chip
DC
Sin(θ＝180)
D=1/2
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
