APTM10DDAM19T3G Dual Boost chopper MOSFET Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 100V RDSon = 19m typ @ Tj = 25C ID = 70A @ Tc = 25C 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 100 70 50 300 30 21 208 75 30 1500 Unit V A July, 2006 Symbol VDSS V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10DDAM19T3G- Rev 1 Absolute maximum ratings APTM10DDAM19T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V VGS = 10V, ID = 35A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM IF VF Min trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit Max Unit Test Conditions nC 35 70 ns 95 125 276 J 302 304 J 320 Min Typ Max IF = 60A VR = 133V di/dt =200A/s www.microsemi.com Unit V Tj = 25C Tj = 125C Tc = 80C IF = 60A IF = 120A IF = 60A m V nA pF 200 VR=200V A 92 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 70A, R G = 5 DC Forward Current Diode Forward Voltage Typ 5100 1900 800 200 Max 250 1000 21 4 100 40 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 19 Inductive switching @ 125C VGS = 15V VBus = 66V ID = 70A R G = 5 Symbol Characteristic Typ 2 VGS = 10V VBus = 100V ID = 70A Chopper diode ratings and characteristics VRRM Min Tj = 25C Tj = 125C 250 500 Tj = 125C 60 1.1 1.4 0.9 Tj = 25C 31 Tj = 125C Tj = 25C 60 60 Tj = 125C 250 A A V ns July, 2006 IDSS Characteristic nC 2-6 APTM10DDAM19T3G- Rev 1 Symbol APTM10DDAM19T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min R 25 Unit C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Max 0.6 0.9 Typ 50 3952 Max C N.m g Unit k K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10DDAM19T3G- Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTM10DDAM19T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 125 VGS=15V, 10V & 9V 250 200 I D, Drain Current (A) 8V 150 7V 100 6V 50 V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 100 75 T J=-55C 50 T J=25C 25 0 T J=125C T J=-55C 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 8 70 1.6 Normalized to V GS=10V @ 35A 1.4 VGS=10V 1.2 VGS=20V 1 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current ID, DC Drain Current (A) 60 50 40 30 20 10 0.8 0 0 50 100 150 200 250 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance T J=125C TC, Case Temperature (C) www.microsemi.com 4-6 APTM10DDAM19T3G- Rev 1 ID, Drain Current (A) 300 APTM10DDAM19T3G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 35A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 1ms limited by RDSon 100 10ms 10 0.6 Single pulse TJ=150C TC=25C 100ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=70A T J=25C 14 VDS=20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (C) www.microsemi.com 5-6 APTM10DDAM19T3G- Rev 1 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10DDAM19T3G Delay Times vs Current Rise and Fall times vs Current 160 120 t d(off) 80 VDS=66V RG=5 T J=125C L=100H 60 40 td(on) 120 100 80 tr 60 20 0 0 0 20 40 60 80 100 I D, Drain Current (A) 120 0 20 40 60 80 100 ID, Drain Current (A) 120 Switching Energy vs Gate Resistance Switching Energy vs Current 1.5 V DS =66V RG =5 T J=125C L=100H 0.5 Switching Energy (mJ) 0.75 Eoff Eon 0.25 Eon VDS=66V ID=70A TJ=125C L=100H 1 Eoff 0.5 0 Eon 0 0 20 40 60 80 100 120 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 200 150 100 50 VDS=66V D=50% RG=5 TJ=125C TC=75C ZVS Hard switching 0 13 25 38 50 30 40 50 60 63 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 250 20 Gate Resistance (Ohms) 300 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=66V R G=5 T J=125C L=100H 140 t r and tf (ns) t d(on) and td(off) (ns) 100 1000 TJ=150C 100 TJ=25C 10 75 I D, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10DDAM19T3G- Rev 1 July, 2006 VSD, Source to Drain Voltage (V)