AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description * 1800 - 2400 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/ RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested. * 24.7 dB Gain * +30 dBm P1dB * +46 dBm Output IP3 * +5V Single Positive Supply * Internal Active Bias Vcc1 1 Vbias1 2 7 Vcc2 / RF Out RF In 3 6 Vcc2 / RF Out AH212-S8G RF In 3 10 Vcc2 / RF Out N/C 4 9 Vcc2 / RF Out N/C 5 8 N/C Vbias2 6 7 N/C Typical Performance (1) Units Min Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power MHz MHz dB dB dB dBm dBm dB Operating Current Range , Icc Stage 1 Amp Current, Icc1 Stage 2 Amp Current, Icc2 Device Voltage, Vcc mA mA mA V @ -45 dBc ACLR 11 N/C N/C 2 AH212-EG Specifications (1) Parameters 12 Vcc1 Vbias1 1 such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply. * Mobile Infrastructure * WiBro Infrastructure * TD-SCDMA 5 N/C Vbias2 4 * Lead-free/ RoHS-compliant The product is targeted for use as linear driver amplifier for SOIC-8 & 4x5mm DFN Package various current and next generation wireless technologies Applications 8 N/C Typ 1800 22.2 +29 +43.5 dBm Max Parameters 2400 Frequency Gain (3) Input Return Loss Output Return Loss Output P1dB (3) Output IP3 IS-95A Channel Power MHz dB dB dB dBm dBm 1960 24.6 12.5 10 +30 +48.0 dBm +23.0 W-CDMA Channel Power dBm 2140 24.7 25 9 +29.5 +46 6.0 @ -45 dBc ACPR +21 340 400 85 315 5 Units @ -45 dBc ACLR 500 Noise Figure Supply Bias Typical dB 2140 24.7 25 9 +29.5 +46 +21 5.5 6.0 +5 V @ 400 mA 3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25C. The AH212-EG in a 4x5 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB. 1. Test conditions unless otherwise noted: 25 C, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Thermal Resistance, Rth Junction Temperature Rating -65 to +150 C +26 dBm +7 V 900 mA 5W 33 C/W +200 C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH212-S8G 1 Watt, High Gain InGaP HBT Amplifier AH212-EG 1 Watt, High Gain InGaP HBT Amplifier AH212-S8PCB1960 AH212-S8PCB2140 AH212-EPCB1960 AH212-EPCB2140 1960 MHz Evaluation Board 2140 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board (lead-free/ RoHS-compliant SOIC-8 package) (lead-free/ RoHS-compliant 12-pin 4x5mm DFN package) Standard tape / reel size = 500 pieces for SOIC-8 package on a 7" reel Standard tape / reel size = 1000 pieces for DFN package on a 7" reel. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 1 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Typical Device Data (SOIC-8) S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) 30 1.0 0.8 Swp Max 3GHz 2. 0 2. 0 6 0. 0.8 6 0. Swp Max 3GHz 0. 4 DB(|S(2,1)|) AH212 S22 1.0 S11 Gain 35 0. 4 0 3. 0 3. 0 4. 0 4. 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 20 0.4 10.0 0 Gain (dB) 5.0 0.2 25 5.0 15 -10.0 -4 .0 -5. 0 -3 .0 S(2,2) AH212 - Swp Min 0.01GHz -1.0 Swp Min 0.01GHz 0 2. .4 -0 -0.8 S(1,1) AH212 -0 .6 3 - 2.5 0 2. 2 -1.0 1.5 Frequency (GHz) -0.8 1 -0 .6 0.5 -3 .0 0 2 -0. -4 .0 -5. 0 .4 -0 5 -10.0 2 -0. 10 Notes: The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44 -130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11 17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51 65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98 -64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27 122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70 -2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34 -145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38 Device S-parameters are available for download from the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014" FR4, four layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor - C7. The markers and vias are spaced in 0.050" increments. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 1850 MHz Reference Design Typical RF Performance at 25 C Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) 1800 25.4 10.5 15.5 +30.5 1850 25.1 12 15 +30.5 1900 25 12.5 13 +30 +47 +47 +47.5 Noise Figure (dB) Device / Supply Voltage Quiescent Current 5.8 5.8 +5 V 400 mA 5.9 (+15 dBm / tone, 1 MHz spacing) 2 2.7 pF DNP Notes: 1. C7 is placed at silkscreen marker `2' and `3' on tqs evalboard or @ 10 deg at 1.85 GHz away from pins 6 and 7. 2. All passive components are of size 0603 unless otherwise noted. S22 vs. Frequency 0 27 -5 26 S 2 2 (d B ) S 2 1 (d B ) S21 vs. Frequency 28 25 -10 -15 24 +25C 23 22 1800 -40C -20 +85C +25C 1820 1840 1860 Frequency (MHz) 1880 -25 1800 1900 1820 S11 vs. Frequency -40C 1860 +85C 1880 1900 1880 1900 Frequency (MHz) OIP3 vs. Frequency 0 +25C 1840 -40C +25 C, +15 dBm/tone 55 +85C -5 O IP 3 (d B m ) S 1 1 (d B ) 50 -10 -15 40 -20 -25 1800 45 1820 1840 1860 Frequency (MHz) 1880 1900 35 1800 1820 1840 1860 Frequency (MHz) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-S8PCB1960) Typical RF Performance at 25 C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 1960 MHz 24.6 dB 12.5 dB 10 dB +30 dBm +48 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power 23 dBm Noise Figure Device / Supply Voltage Quiescent Current 5.5 dB +5 V 400 mA (@-45 dBc ACPR, IS-95, 9 channels fwd) 2 2.7 pF DNP Notes: 1. C7 is placed at silkscreen marker `2' and `3' on tqs evalboard or @14 deg at 1.96 GHz away from pins 6 and 7. 2. All passive components are of size 0603 unless otherwise noted. S11 vs. Frequency S21 vs. Frequency 27 0 26 -5 24 23 22 1930 + 25 C 1940 -40 C -10 -15 1950 1960 1970 Frequency (MHz) 1980 1990 -20 -20 -25 1930 -25 1930 1940 1980 1990 50 45 1990 28 27 -40C 1940 1950 +25C 1960 1970 Frequency (MHz) 10 35 Temperature (C) 60 85 45 12 13 1980 -40 6 -45 5 4 -40C 1990 2 1930 +25C 14 15 16 Output Power (dBm) 17 18 ACPR vs. Channel Power 7 3 +85C 1990 35 -15 ACPR (dBc) NF (dB) 29 1980 50 Noise Figure vs. Frequency 30 1970 40 -40 Circuit boards are optimized at 1960 MHz 1960 OIP3 vs. Output Power 35 1980 1950 +85C freq. = 1960 MHz, 1961 MHz, +25 C 55 40 1950 1960 1970 Frequency (MHz) 1940 -40C Frequency (MHz) OIP3 (dBm) OIP3 (dBm) OIP3 (dBm) 1970 OIP3 vs. Temperature P1dB vs. Frequency P1dB (dBm) 1960 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 55 40 26 1930 1950 Frequency (MHz) 45 31 -15 +25C +25 C, +15 dBm/tone 1940 -10 +85 C 50 35 1930 +85C -5 OIP3 vs. Frequency 55 -40C S22 (dB) S11 (dB) S21 (dB) +25C 25 S22 vs. Frequency 0 IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz -50 -55 -60 -65 +85C -40 C +25 C +85 C -70 1940 1950 1960 1970 1980 1990 18 19 20 21 22 23 24 25 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications Typical RF Performance at 25 C Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) 2010 24.6 16 9.5 +30 2025 24.3 18 9 +30 +47 46.6 Channel Power (dBm) 23 23 Noise Figure (dB) Device / Supply Voltage Quiescent Current 6 6 (+15 dBm / tone, 1 MHz spacing) (@-45 dBc ACPR, IS-95, 9 channels fwd) 2.7 pF DNP Note: 1. C7 is placed at silkscreen marker `2' and `3' on tqs evalboard or @17 deg at 2.015 GHz away from pins 6 and 7. 2. All passive components are of size 0603 unless otherwise noted. S11 vs. Frequency S21 vs. Frequency 0 +25C -40C +85C -5 28 27 26 S 1 1 (d B ) S 2 1 (d B ) 2 +5 V 400 mA 25 -10 -15 24 +25C 23 22 2000 2005 -40C 2010 2015 Frequency (MHz) S22 vs. Frequency 0 55 -20 +85C 2020 2025 -25 2000 2005 2010 2015 ACPR vs. Channel Power +25 C, +15 dBm/tone IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 2010 MHz -35 -10 -15 A C P R (d B c ) O IP 3 (d B m ) 50 S 2 2 (d B ) 2025 OIP3 vs. Frequency -5 45 +25C 2005 2010 -40C 2015 Frequency (MHz) +85C 2020 2025 35 2010 -45 -55 -65 40 -20 -25 2000 2020 Frequency (MHz) -75 2015 2020 Frequency (MHz) 2025 19 20 21 22 23 24 Output Channel Power (dBm) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 5 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-S8PCB2140) Typical RF Performance at 25 C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 2140 MHz 24.7 dB 25 dB 9 dB +29.5 dBm +46 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +21 dBm Noise Figure Device / Supply Voltage Quiescent Current 6 dB +5 V 400 mA (@-45 dBc ACLR, W-CDMA, TM64 DPCH) 0 2.4 pF DNP Notes: 1. C7 is placed at silkscreen marker `2' on tqs evalboard or @12.2 deg at 2.14 GHz away from pins 6 and 7. DNP C3. 2. All passive components are of size 0603 unless otherwise noted. S21 vs. Frequency S11 vs. Frequency 27 S22 vs. Frequency 0 0 +25C -5 26 -40C +85C -5 25 24 S22 (dB) S11 (dB) S21 (dB) -10 -15 -20 -10 -15 -25 23 +25C 22 2110 2120 -40C 2130 2140 2150 -20 -30 +85C 2160 -35 2110 2170 +25C 2120 Frequency (MHz) 2160 50 45 2170 -40C 2120 2130 +25C 10 35 Temperature (C) 60 12 85 2140 2150 Frequency (MHz) 13 ACLR vs. Channel Power 3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz 2160 6 5 -40C 2170 3 2110 14 15 16 Output Power (dBm) -40 4 +85C 18 35 -15 ACLR (dBc) NF (dB) 26 17 45 7 27 2170 freq. = 2140 MHz, 2141 MHz, +25 C Noise Figure vs. Frequency 28 2160 50 8 29 2150 40 -40 Circuit boards are optimized at 2140 MHz 2140 +85C OIP3 vs. Output Power 35 2130 2140 2150 Frequency (MHz) 2130 -40C Frequency (MHz) 40 2120 2120 55 P1dB vs. Frequency P1dB (dBm) 2170 OIP3 (dBm) OIP3 (dBm) OIP3 (dBm) 40 25 2110 2160 freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 55 45 30 2150 OIP3 vs. Temperature +25 C, +15 dBm/tone 50 35 2110 2140 Frequency (MHz) OIP3 vs. Frequency 55 2130 -25 2110 +25C -45 -50 -55 +85C -40 C +25 C +85 C -60 2120 2130 2140 2150 2160 2170 18 19 20 21 22 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 6 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2350 MHz Reference Design for WiBro Applications Typical RF Performance at 25 C Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) 2300 24.5 10 7.5 +30.4 2350 24.4 10 7 +30 2400 24.3 10 6.5 +29.6 +45 +44.3 +43.7 (+15 dBm / tone, 1 MHz spacing) Device / Supply Voltage Quiescent Current +5 V 400 mA 0 2.2 pF DNP Notes: 1. C7 is placed at the silkscreen marker `1' on tqs evalboard or @ 4.2 degrees at 2.35 GHz away from pin 6 and 7. C3 is placed at silkscreen marker `A' or@ 4.2 degrees at 2.35 GHz away from pin 3. 2. All passive components are of size 0603 unless otherwise noted. S11 vs. Frequency S22 vs. Frequency 0 25 -5 -5 24 23 22 21 2300 S 2 2 (d B ) 0 S 1 1 (d B ) S 2 1 (d B ) S21 vs. Frequency 26 -10 -15 -20 2320 2340 2360 2380 2400 -25 2300 2320 2340 2360 2380 -25 2300 2400 2320 Frequency (MHz) 2360 2380 2400 P1dB vs. Frequency +25 C, +15 dBm/tone 55 2340 Frequency (MHz) OIP3 vs. Frequency 31 30 P 1 d B (d B m ) 50 O IP 3 (d B m ) -15 -20 Frequency (MHz) 45 40 35 2300 -10 29 28 27 2320 2340 2360 Frequency (MHz) 2380 2400 26 2300 2320 2340 2360 2380 2400 Frequency (MHz) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 7 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Typical Device Data (DFN 4x5 mm) S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) 1.0 0.8 Swp Max 3GHz 2. 0 2. 0 6 0. 0.8 6 0. Swp Max 3GHz 0. 4 DB(|S(2,1)|) AH212 30 S22 1.0 S11 Gain 35 0. 4 0 3. 0 3. 0 4. 0.2 5.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 20 0.4 10.0 0 Gain (dB) 0 4. 5.0 0.2 25 15 -10.0 -4 .0 -5. 0 -3 .0 S(2,2) AH212 - 0 2. Swp Min 0.01GHz -1.0 Swp Min 0.01GHz -0.8 S(1,1) AH212 .4 -0 -0 .6 3 - 2.5 0 2. 2 -1.0 1.5 Frequency (GHz) -0.8 1 -0 .6 0.5 -3 .0 0 2 -0. -4 .0 -5. 0 .4 -0 5 -10.0 2 -0. 10 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -10.92 -3.48 -0.12 -2.58 -3.56 -8.55 -12.30 -5.21 -4.42 -5.81 -9.68 -22.03 -13.88 -7.86 -5.27 -4.10 -3.60 -112.71 -121.92 -168.99 163.93 147.73 125.39 -155.14 -171.47 164.06 140.51 118.60 121.72 -133.74 -148.71 -164.02 -176.86 174.71 14.75 22.90 27.45 26.41 25.52 28.69 29.61 28.43 26.63 25.16 23.77 22.15 20.27 18.12 16.09 14.35 12.79 95.57 70.25 14.93 -53.73 -62.82 -95.79 -147.37 167.21 132.05 99.97 67.69 34.69 2.51 -28.03 -56.46 -85.23 -117.50 -73.98 -70.46 -67.96 -60.92 -59.17 -54.90 -55.92 -55.39 -56.48 -57.72 -60.00 -60.00 -55.39 -50.75 -48.64 -47.96 -47.13 47.38 9.54 94.09 47.82 67.34 49.69 32.50 23.93 3.83 -6.10 -86.34 -166.62 157.88 130.86 115.31 96.72 90.37 -2.62 -2.87 -2.87 -1.39 -1.19 -1.51 -1.54 -1.50 -1.61 -1.61 -1.58 -1.43 -1.39 -1.27 -1.27 -1.27 -1.24 -143.22 -160.44 -166.36 -168.43 -177.07 179.99 179.91 177.74 175.61 173.57 171.97 169.44 166.52 162.89 159.59 156.84 154.34 Device S-parameters are available for download from the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014" FR4, four layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor - C7. The markers and vias are spaced in 0.050" increments. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 8 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-EPCB1960) Typical RF Performance at 25 C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 1960 MHz 27 dB 16 dB 10 dB +30.5 dBm +46.5 dBm Channel Power +24.5 dBm (+15 dBm / tone, 1 MHz spacing) (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current 5.5 dB +5 V 400 mA S21 vs. Frequency S11 vs. Frequency 30 +25C -40C 0 +25C +85C -40C +85C 28 27 -5 S 2 2 (d B ) -5 S 1 1 (d B ) 29 S 2 1 (d B ) S22 vs. Frequency 0 -10 -15 -10 -15 26 -20 -20 25 1930 -25 1930 -25 1930 +25C 1940 1950 1960 1970 1980 1990 1940 Frequency (MHz) 1960 1970 1980 1990 Supply Bias vs. Temperature OIP3 vs. Output Power 430 390 350 45 60 85 45 35 12 P1dB vs. Frequency 31 13 14 15 16 Output Power (dBm) 17 18 -40 -15 Noise Figure vs. Frequency Circuit boards are optimized at 1960 MHz 1990 40 35 10 35 Temperature (C) 1980 50 40 370 1970 OIP3 vs. Temperature O IP 3 (d B m ) O IP 3 (d B m ) 410 1960 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 55 50 -15 1950 +85C Frequency (MHz) freq. = 1960 MHz, 1961 MHz, +25 C 55 -40 1940 Frequency (MHz) 450 O IP 3 (d B m ) 1950 -40C 10 35 Temperature (C) 60 85 ACPR vs. Channel Power IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz 7 -35 N F (d B ) P 1 d B (d B m ) 29 28 27 26 1930 -40C 1940 1950 +25C 1960 1970 Frequency (MHz) 5 4 -40C 1990 2 1900 -45 -55 -65 3 +85C 1980 A C P R (d B c ) 6 30 +25C +85C -40 C +25 C +85 C -75 1920 1940 1960 1980 2000 18 19 20 21 22 23 24 25 26 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 9 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-EPCB2140) Typical RF Performance at 25 C eFrequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 2140 MHz 25.5 dB 24 dB 9 dB +30.5 dBm +46 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +22 dBm Noise Figure Device / Supply Voltage Quiescent Current 6 dB +5 V 400 mA (@-45 dBc ACPR, IS-95, 9 channels fwd) S21 vs. Frequency S11 vs. Frequency 28 0 27 -5 25 24 +25C 23 2110 -40C 2120 2130 -5 -15 -20 -20 -30 2110 -25 2110 +25C 2140 2150 2160 2170 2120 2130 2140 2150 2160 2170 350 45 85 13 14 15 16 Output Power (dBm) 17 18 -40 28 2120 2130 +25C 2140 2150 Frequency (MHz) 85 ACLR vs. Channel Power 6 5 4 +85C 2160 60 -40 A C L R (d B c ) N F (d B ) 29 -40C 10 35 Temperature (C) 3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz 8 7 27 -15 Noise Figure vs. Frequency Circuit boards are optimized at 2140 MHz 30 26 2110 45 35 12 P1dB vs. Frequency 31 2170 40 35 60 2160 50 40 370 2150 freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 55 O IP 3 (d B m ) O IP 3 (d B m ) 390 2140 +85C OIP3 vs. Temperature freq. = 2140 MHz, 2141 MHz, +25 C 50 410 2130 -40C Frequency (MHz) OIP3 vs. Output Power 430 10 35 Temperature (C) 2120 Frequency (MHz) 55 -15 -15 -25 Supply Bias vs. Temperature -40 -10 +85C 450 O IP 3 (d B m ) +85C -10 Frequency (MHz) P 1 d B (d B m ) -40C S 2 2 (d B ) S 1 1 (d B ) S 2 1 (d B ) +25C 26 S22 vs. Frequency 0 -40C 2170 3 2110 +25C -45 -50 -55 +85C -40 C +25 C +85 C -60 2120 2130 2140 2150 2160 2170 18 19 20 21 22 23 24 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 10 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "AH212G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Functional Pin Layout Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out RF In 3 6 Vcc2 / RF Out Vbias2 4 5 N/C Function Pin No. Vcc1 Input Output/ Vcc2 Vbias1 Vbias2 GND N/C or GND 1 3 6, 7 2 4 Backside Paddle 5, 8 Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 11 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information This package is lead-free/ RoHS-compliant. The plating material on the leads is Matte Tin. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "AH212-EG" designator with an alphanumeric lot code on the top surface of the package. AH212-EG Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Functional Pin Layout Vbias1 1 N/C 2 12 Vcc1 11 N/C RF In 3 10 Vcc2 / RF Out N/C 4 9 Vcc2 / RF Out N/C 5 8 N/C Vbias2 6 7 N/C Function Pin No. Vcc1 Input Output /Vcc2 Vbias1 Vbias2 GND N/C or GND 12 3 9, 10 1 6 Backside Paddle 2, 4, 5, 7, 8, 11 Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 12 of 12 July 2010 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: AH212-S8G