Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 1 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Features
• 1800 – 2400 MHz
• 24.7 dB Gain
• +30 dBm P1dB
• +46 dBm Output IP3
• +5V Single Positive Supply
• Internal Active Bias
• Lead-free/ RoHS-compliant
SOIC-8 & 4x5mm DFN Package
Applications
• Mobile Infrastructure
• WiBro Infrastructure
• TD-SCDMA
Product Description
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is available in an industry-standard
SMT lead-free/ RoHS-compliant SOIC-8 or 4x5mm DFN
package. All devices are 100% RF and DC tested.
The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA,
and WiBro, where high linearity and high power is
required. The internal active bias allows the AH212 to
maintain high linearity over temperature and operate
directly off a +5 V supply.
Functional Diagram
AH212-S8G
AH212-EG
Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 1800 2400
Test Frequency MHz 2140
Gain dB 22.2 24.7
Input Return Loss dB 25
Output Return Loss dB 9
Output P1dB dBm +29 +29.5
Output IP3
(2) dBm +43.5 +46
Noise Figure dB 6.0
W-CDMA Channel Power
@
-45 dBc ACLR dBm +21
Operating Current Range , Icc mA 340 400 500
Stage 1 Amp Current, Icc1 mA 85
Stage 2 Amp Current, Icc2 mA 315
Device Voltage, Vcc V 5
1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +26 dBm
Device Voltage +7 V
Device Current 900 mA
Device Power 5 W
Thermal Resistance, Rth 33 °C/W
Junction Temperature +200 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameters Units Typical
Frequency MHz 1960 2140
Gain (3) dB 24.6 24.7
Input Return Loss dB 12.5 25
Output Return Loss dB 10 9
Output P1dB (3) dBm +30 +29.5
Output IP3 dBm +48.0 +46
IS-95A Channel Power
@
-45 dBc ACPR dBm +23.0
W-CDMA Channel Power
@
-45 dBc ACLR dBm +21
Noise Figure dB 5.5 6.0
Supply Bias +5 V @ 400 mA
3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25ºC. The AH212-EG in a 4x5
mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB.
Ordering Information
Part No. Description
AH212-S8G 1 Watt, High Gain InGaP HBT Amplifier
(lead-free/ RoHS-compliant SOIC-8 package)
AH212-EG 1 Watt, High Gain InGaP HBT Amplifier
(lead-free/ RoHS-compliant 12-pin 4x5mm DFN package)
AH212-S8PCB1960 1960 MHz Evaluation Board
AH212-S8PCB2140 2140 MHz Evaluation Board
AH212-EPCB1960 1960 MHz Evaluation Board
AH212-EPCB2140 2140 MHz Evaluation Board
Standard tape / reel size = 500 pieces for SOIC-8 package on a 7” reel
Standard tape / reel size = 1000 pieces for DFN package on a 7” reel.
1
2
3
4
8
7
6
5
8
7
6
5
N/C
Vcc2 / RF Out
N/C
Vcc2 / RF Out
Vcc1
Vbias1
RF In
Vbias2
Vbias1 1
2
3
4
5
6
12
11
10
9
8
7
N/C
RF In
N/C
N/C
Vbias2
Vcc1
N/C
Vcc2 / RF Out
Vcc2 / RF Out
N/C
N/C
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 2 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Typical Device Data (SOIC-8)
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 °C, calibrated to device leads)
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Gain
5
10
15
20
25
30
35
Gain (dB)
DB(|S(2,1)|)
AH212
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
3GHz
Swp Min
0.01GHz
S(1,1)
AH212
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
3GHz
Swp Min
0.01GHz
S(2,2)
AH212
Notes:
The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain
will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment.
S-Parameters for AH212-S8G (VCC = +5 V, ICC = 400 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S2 1 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -9.19 -130.35 17.61 65.80 -64.44 122.93 -2.71 -145.39
100 -4.58 -125.96 21.86 69.36 -58.42 -135.96 -2.92 -160.72
200 -0.92 -169.81 27.39 14.98 -55.39 49.47 -3.04 -166.12
400 -2.81 160.59 26.96 -55.64 -50.75 78.75 -1.13 -169.23
600 -4.10 134.99 26.35 -69.83 -49.90 59.30 -0.86 -179.36
800 -10.08 97.76 30.19 -108.08 -46.20 44.46 -0.93 172.84
1000 -14.20 -174.16 31.30 -167.40 -49.63 25.99 -1.05 164.98
1200 -7.51 146.36 29.49 141.86 -44.88 48.15 -1.97 159.52
1400 -6.58 101.88 27.14 99.61 -45.19 29.86 -2.76 156.95
1600 -6.67 65.24 25.02 63.05 -46.75 33.97 -2.82 154.08
1800 -7.87 37.31 23.35 28.87 -47.96 24.08 -2.53 150.05
2000 -11.42 19.84 22.01 -5.81 -44.88 70.88 -2.08 143.86
2200 -18.51 69.85 20.56 -44.21 -40.54 52.01 -1.45 134.91
2400 -8.70 105.38 18.40 -84.80 -38.49 31.21 -1.02 123.57
2600 -4.43 93.47 15.61 -122.39 -38.94 23.84 -0.89 113.66
2800 -2.78 84.89 12.91 -156.41 -39.25 -2.01 -1.16 106.71
3000 -2.44 81.11 10.51 167.98 -38.27 0.70 -1.34 101.38
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitor – C7. The markers and vias are spaced in 0.050” increments.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 3 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 1850 MHz Reference Design
Typical RF Performance at 25 °C
Frequency (MHz) 1800 1850 1900
Gain (dB) 25.4 25.1 25
Input Return Loss (dB) 10.5 12 12.5
Output Return Loss (dB) 15.5 15 13
Output P1dB (dBm) +30.5 +30.5 +30
Output IP3 (dBm)
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+47 +47 +47.5
Noise Figure (dB) 5.8 5.8 5.9
Device / Supply Voltage +5 V
Quiescent Current 400 mA
Notes:
1. C7 is placed at silkscreen marker ‘2’ and ‘3’ on tqs evalboard or @ 10 deg at 1.85
GHz away from pins 6 and 7.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
22
23
24
25
26
27
28
1800 1820 1840 1860 1880 1900
Frequency ( MHz)
S21
(
dB
)
+25°C -40°C +85°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1800 1820 1840 1860 1880 1900
Frequency (MHz)
S11
(
dB
)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1800 1820 1840 1860 1880 1900
Frequency (MHz)
S22
(
dB
)
+25°C -40°C +85°C
OIP3 vs. Frequency
+25° C, +15 dBm/tone
35
40
45
50
55
1800 1820 1840 1860 1880 1900
Frequency (MHz)
OIP3
(
dBm
)
2
2.7 pF
DNP
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 4 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25 °C
Frequency 1960 MHz
Gain 24.6 dB
Input Return Loss 12.5 dB
Output Return Loss 10 dB
Output P1dB +30 dBm
Output IP3
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+48 dBm
Channel Power
(@
-45 dBc ACPR, IS-95, 9 channels fwd
)
23 dBm
Noise Figure 5.5 dB
Device / Supply Voltage +5 V
Quiescent Current 400 mA
Notes:
1. C7 is placed at silkscreen marker ‘2’ and ‘3’ on tqs evalboard or @14 deg at 1.96 GHz
away from pins 6 and 7.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
22
23
24
25
26
27
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S21 (dB)
+ 25 C -40 C +85 C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
OIP3 vs. Frequency
+25° C, +15 dBm /tone
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 1960 MHz, 1961 MHz, +1 5 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25° C
35
40
45
50
55
12 13 14 15 16 17 18
Outp u t Power (dBm)
OIP3 (dBm)
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
26
27
28
29
30
31
1930 1940 1950 1960 1970 1980 1990
Frequency (M Hz)
P1dB (dBm)
-40°C +25°C +85°C
Noise Figure vs. Frequency
2
3
4
5
6
7
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch . Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-70
-65
-60
-55
-50
-45
-40
18 19 20 21 22 23 24 25
Output Channel Power (dBm)
ACPR (dBc)
-40 C +25 C +85 C
2
DNP 2.7 pF
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 5 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications
Typical RF Performance at 25 °C
Frequency (MHz) 2010 2025
Gain (dB) 24.6 24.3
Input Return Loss (dB) 16 18
Output Return Loss (dB) 9.5 9
Output P1dB (dBm) +30 +30
Output IP3 (dBm)
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+47 46.6
Channel Power (dBm)
(@
-45 dBc ACPR, IS-95, 9 channels fwd
)
23 23
Noise Figure (dB) 6 6
Device / Supply Voltage +5 V
Quiescent Current 400 mA
Note:
1. C7 is placed at silkscreen marker ‘2’ and ‘3’ on tqs evalboard or @17 deg at 2.015 GHz
away from pins 6 and 7.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
22
23
24
25
26
27
28
2000 2005 2010 2015 2020 2025
Frequency (MHz)
S21
(
dB
)
+25°C -40°C +85°C
S11 vs. Frequenc
y
-25
-20
-15
-10
-5
0
2000 2005 2010 2015 2020 2025
Frequency (MHz)
S11
(
dB
)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2000 2005 2010 2015 2020 2025
Frequency (MHz)
S22
(
dB
)
+25°C -40°C +85°C
OIP3 vs. Frequency
+25° C, +15 dBm/tone
35
40
45
50
55
2010 2015 2020 2025
Frequency (MHz)
OIP3
(
dBm
)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 2010 MHz
-75
-65
-55
-45
-35
19 20 21 22 23 24
Output Channel Power (dBm)
ACPR
(
dBc
)
2
2.7 pF
DNP
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 6 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-S8PCB2140)
Typical RF Performance at 25 °C
Frequency 2140 MHz
Gain 24.7 dB
Input Return Loss 25 dB
Output Return Loss 9 dB
Output P1dB +29.5 dBm
Output IP3
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+46 dBm
Channel Power
(@
-45 dBc ACLR, W-CDMA, TM64 DPCH
)
+21 dBm
Noise Figure 6 dB
Device / Supply Voltage +5 V
Quiescent Current 400 mA
Notes:
1. C7 is placed at silkscreen marker ‘2’ on tqs evalboard or @12.2 deg at 2.14 GHz
away from pins 6 and 7. DNP C3.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
22
23
24
25
26
27
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
OIP3 vs. Frequency
+25° C, +15 dBm /tone
35
40
45
50
55
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 2140 MHz, 2141 MHz, +1 5 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 2140 M H z, 2141 MH z, +25° C
35
40
45
50
55
12 13 14 15 16 17 18
O u tput Power (d B m)
OIP3 (dBm)
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
25
26
27
28
29
30
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
Noise Figure vs. Frequency
3
4
5
6
7
8
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
ACLR vs. Channel Power
3GPP W-CDMA , T est Mod el 1+64 D PC H, ±5 M Hz offset, 2140 MHz
-60
-55
-50
-45
-40
18 19 20 21 22
Output Cha nne l Po wer (d B m )
ACLR (dBc)
-40 C +25 C +85 C
0
2.4 pF
DNP
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 7 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2350 MHz Reference Design for WiBro Applications
Typical RF Performance at 25 °C
Frequency (MHz) 2300 2350 2400
Gain (dB) 24.5 24.4 24.3
Input Return Loss (dB) 10 10 10
Output Return Loss (dB) 7.5 7 6.5
Output P1dB (dBm) +30.4 +30 +29.6
Output IP3 (dBm)
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+45 +44.3 +43.7
Device / Supply Voltage +5 V
Quiescent Current 400 mA
Notes:
1. C7 is placed at the silkscreen marker ‘1’ on tqs evalboard or @ 4.2 degrees at 2.35 GHz
away from pin 6 and 7. C3 is placed at silkscreen marker ‘A’ or@ 4.2 degrees at 2.35
GHz away from pin 3.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
21
22
23
24
25
26
2300 2320 2340 2360 2380 2400
Frequency (MHz)
S21
(
dB
)
S11 vs. Frequency
-25
-20
-15
-10
-5
0
2300 2320 2340 2360 2380 2400
Frequency (MHz)
S11
(
dB
)
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2300 2320 2340 2360 2380 2400
Frequency (MHz)
S22
(
dB
)
OIP3 vs. Frequency
+25° C, +15 dBm/tone
35
40
45
50
55
2300 2320 2340 2360 2380 2400
Frequency (MHz)
OIP3
(
dBm
)
P1dB vs. Frequency
26
27
28
29
30
31
2300 2320 2340 2360 2380 2400
Frequency (MHz)
P1dB
(
dBm
)
0
2.2 pF
DNP
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 8 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Typical Device Data (DFN 4x5 mm)
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 °C, calibrated to device leads)
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Gain
5
10
15
20
25
30
35
Gain (dB)
DB(|S(2,1)|)
AH212
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
3GHz
Swp Min
0.01GHz
S(1,1)
AH212
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
3GHz
Swp Min
0.01GHz
S(2,2)
AH212
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain
will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment.
S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -10.92 -112.71 14.75 95.57 -73.98 47.38 -2.62 -143.22
100 -3.48 -121.92 22.90 70.25 -70.46 9.54 -2.87 -160.44
200 -0.12 -168.99 27.45 14.93 -67.96 94.09 -2.87 -166.36
400 -2.58 163.93 26.41 -53.73 -60.92 47.82 -1.39 -168.43
600 -3.56 147.73 25.52 -62.82 -59.17 67.34 -1.19 -177.07
800 -8.55 125.39 28.69 -95.79 -54.90 49.69 -1.51 179.99
1000 -12.30 -155.14 29.61 -147.37 -55.92 32.50 -1.54 179.91
1200 -5.21 -171.47 28.43 167.21 -55.39 23.93 -1.50 177.74
1400 -4.42 164.06 26.63 132.05 -56.48 3.83 -1.61 175.61
1600 -5.81 140.51 25.16 99.97 -57.72 -6.10 -1.61 173.57
1800 -9.68 118.60 23.77 67.69 -60.00 -86.34 -1.58 171.97
2000 -22.03 121.72 22.15 34.69 -60.00 -166.62 -1.43 169.44
2200 -13.88 -133.74 20.27 2.51 -55.39 157.88 -1.39 166.52
2400 -7.86 -148.71 18.12 -28.03 -50.75 130.86 -1.27 162.89
2600 -5.27 -164.02 16.09 -56.46 -48.64 115.31 -1.27 159.59
2800 -4.10 -176.86 14.35 -85.23 -47.96 96.72 -1.27 156.84
3000 -3.60 174.71 12.79 -117.50 -47.13 90.37 -1.24 154.34
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitor – C7. The markers and vias are spaced in 0.050” increments.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 9 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-EPCB1960)
Typical RF Performance at 25 °C
Frequency 1960 MHz
Gain 27 dB
Input Return Loss 16 dB
Output Return Loss 10 dB
Output P1dB +30.5 dBm
Output IP3
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+46.5 dBm
Channel Power
(@
-45 dBc ACPR, IS-95, 9 channels fwd
)
+24.5 dBm
Noise Figure 5.5 dB
Device / Supply Voltage +5 V
Quiescent Current 400 mA
S21 vs. Frequency
25
26
27
28
29
30
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S21
(
dB
)
+25°C -40°C +85°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S11
(
dB
)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S22
(
dB
)
+25°C -40°C +85°C
Supply Bias vs. Temperature
350
370
390
410
430
450
-40 -15 10 35 60 85
Temperature (°C)
OIP3
(
dBm
)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25° C
35
40
45
50
55
12 13 14 15 16 17 18
Output Power (dBm)
OIP3
(
dBm
)
OIP3 vs. Temperature
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3
(
dBm
)
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
26
27
28
29
30
31
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
P1dB
(
dBm
)
-40°C +25°C +85°C
Noise Figure vs. Frequency
2
3
4
5
6
7
1900 1920 1940 1960 1980 2000
Frequency (MHz)
NF
(
dB
)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-75
-65
-55
-45
-35
18 19 20 21 22 23 24 25 26
Output Channel Power (dBm)
ACPR
(
dBc
)
-40 C +25 C +85 C
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 10 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-EPCB2140)
Typical RF Performance at 25 °C
e
Frequency 2140 MHz
Gain 25.5 dB
Input Return Loss 24 dB
Output Return Loss 9 dB
Output P1dB +30.5 dBm
Output IP3
(
+15 dBm / tone, 1 MHz s
p
acin
g)
+46 dBm
Channel Power
(@
-45 dBc ACPR, IS-95, 9 channels fwd
)
+22 dBm
Noise Figure 6 dB
Device / Supply Voltage +5 V
Quiescent Current 400 mA
S21 vs. Frequency
23
24
25
26
27
28
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S21
(
dB
)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11
(
dB
)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22
(
dB
)
+25°C -40°C +85°C
Supply Bias vs. Temperature
350
370
390
410
430
450
-40 -15 10 35 60 85
Temperature (°C)
OIP3
(
dBm
)
OIP3 vs. Output Power
freq. = 2140 MHz, 2141 MHz, +25° C
35
40
45
50
55
12 13 14 15 16 17 18
Output Power (dBm)
OIP3
(
dBm
)
OIP3 vs. Temperature
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3
(
dBm
)
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
26
27
28
29
30
31
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dB
(
dBm
)
-40°C +25°C +85°C
Noise Figure vs. Frequency
3
4
5
6
7
8
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NF
(
dB
)
-40°C +25°C +85°C
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-60
-55
-50
-45
-40
18 19 20 21 22 23 24
Output Channel Power (dBm)
ACLR
(
dBc
)
-40 C +25 C +85 C
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 11 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information
This package is lead-free/ RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum
260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Product Marking
The component will be marked with an
“AH212G” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes 500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 2000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters
Functional Pin Layout
Function Pin No.
Vcc1 1
Input 3
Output/ Vcc2 6, 7
Vbias1 2
Vbias2 4
GND Backside Paddle
N/C or GND 5, 8
1
2
3
4
8
7
6
5
8
7
6
5
N/C
Vcc2 / RF Out
N/C
Vcc2 / RF Out
Vcc1
Vbias1
RF In
Vbias2
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sal es@tq s .co m • Web site: www.TriQuint.com Page 12 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information
This package is lead-free/ RoHS-compliant. The plating material on the leads is Matte Tin. It is compatible with both lead-free (maximum
260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
AH212-EG
Mounting Configuration / Land Pattern
Product Marking
The component will be marked with an
“AH212-EG” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes 500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 2000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters
Functional Pin Layout
Function Pin No.
Vcc1 12
Input 3
Output /Vcc2 9, 10
Vbias1 1
Vbias2 6
GND Backside Paddle
N/C or GND 2, 4, 5, 7, 8, 11
Vbias1 1
2
3
4
5
6
12
11
10
9
8
7
N/C
RF In
N/C
N/C
Vbias2
Vcc1
N/C
Vcc2 / RF Out
Vcc2 / RF Out
N/C
N/C
