2SK1548-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET @ Features @\digh speed switching @| ow on-resistance @\Jo secondary breakdown @/|.ow driving power @ldigh voltage @ /oss= +30V Guarantee Avalanche-proof @ Applications switching regulators eJPS @ 3C-DC converters @ Seneral purpose power amplifier M Max. Ratings and Characteristics @ d\bsolute Maximum Ratings(Tc=25C) F-IJ SERIES @ Outline Drawings - 3 oe] my) 1 . | . nn a f 22D ha 1 ne a * 210. i b 1:Gate . 2: Brain 3:Source | 0.7407 a o0 8" ate ie eps f rower Lo 2 94s0e J ening JEDEC EIAJ SC-67 Wi Equivalent Circuit Schematic _ Items symbols | Ratings | Units __lrain-source voltage Voss 900 Vv __ Continuous drain current I, 3.5 A Drain (D} __Julsed drain current Tpqouts) 9.0 A __ Continuous reverse drain current Ton 3.5 A __Gate-source peak voltage Voss +30 V __ldax. power dissipation Pp 40 Ww Gate (G} Operating and storage Tan 150 C Source (8) __iemperature range Tag 55~ +150 Cc @ :lectrical Characteristics(Tc=25C) 7 Items Symbols Test Conditions Min. Typ. Max Units __Drain-source breakdown voltage Vungpgs I,=ImA Ves =OV 900 Vv _ Grate threshold voltage V esctny Ip=ImA Vus= Vos 2.5 3.5 5.0 Vv = = 9? 5 zero gate voltage drain current lass oo _ a = es oO uA __Gate-source leakage current less Ves=at30V Vns=0V 10 100 nA __lirain-source on-state resistance Roston IpH2A Ves=10V 4.6 5.5 2 __Vorward transconductance Brs ILp=ZA Vys=25V 2 4 5 __Input capacitance Ciss Vos =25V 800 1200 __ Output capacitance oss Vos =0V 80 126 pF __lteverse transfer capacitance Crss f ~IMHz 30 45 u-on time ton tdgony Vec=600V Ip=3.5A 30 45 'ton = tatony H tr} tr _ 65 160 : con) Tee Vas=10V ns urn-off time tor tdorsy R, =250 110 165 __! torr =tacorry tte? tr one 60 90 __Jxode forward on-voltage V sp I;=2XI]oyn Vos=OV Ta, = 25C 0.90 1.35 V __Tteverse recovery time tr te=Ioe d/d=100A/us T., = 25C 700 ns @ hermal Characteristics __ Items Symbols Test Conditions Min. Typ. Max. | Units hermal resistance Rincon-a) channel to air 62.5 | C/W _ a Rincr-ey channel to case 3.125 | *C/W A2-228 2SK 1548-01MR @ Characteristics 10 los (Vong) pulse test, Ten= 25C Vos=20V10V BY 7V BBV 6 1, 4 (Al 2 6 0 10 20 30 40 50 Vos (Vv) Typical Output Characteristics lu= ft (Vgs) : pulse test, Vos=26V Ip (A) 0 2 4 6 8 10 12 Ves (Vv) Typical Transfer Characteristics Ten=150 gfs (s) sts=t lob ipulse test, Vos=2B 0 2 4 6 8 1,CA) Typical Forward Transconductance vs. |p A2-229 FUJI POWER MOS-FET Roolond=f (Tend i toe 2A, Ves=1 OV Rascon} () , -50 0 50 100 Ta CC) On State Resistance vs. T., Vos=45V SOV 5.5 V os lan) =f (1 0}: pulse t Ten= 25C Rostony (a) 0 2 4 6 & IplA) Typical Drain-Source on State Resistance vs. |p Voslinl=f (Tend: |p mA Vos Vag mak, Voesan 2 (Vv) 150 100 Ten CC] Gate Threshold Voltage vs. T., 150 FUJI POWER MOS-FET 2SK 1548-01MR 1900 20 C=f (Vos)! Vos V, f= 1 MAE Vos=f (Og: 1,2 354 800 Vos 5 600 10 Vos 400 Vos (Vv) (VI 5 200 0 0 0 20 30 40 %G 20 40 60 Vos(V) Qg (nC) Typical Capacitance vs. Vp; Typical Input Charge Pe= (oeo) ft pulse test, Vos=O0 I. Pp (A) (WI 0.4 0.8 Vp (VJ TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T, lo=f{Veedd D=0.01, Tee 25 10 Rus lb CC/AW) 194 (A) 1o* 1 10" to" 10" 10" 1 10! ww 0! t(S] Vos (V3 Transient Thermal Impedance Safe Operating Area A2-230 oe Ne TMOAZUISOANS (MBO Bre, FoF. OS MAES EMI ROR ROAM, SA bOMIc kD BAO PSH < ABSEHSTEMHADET, COAROPILAMENTOSRE SHA ENSBSIAL, TONROMMMRO (LMA ASL TL FO BR HRRBL TT < EK LA, AMT OSIM TH ACG, BLOM RE RAL ARAM SWS S BOCHO. Rae OSC ko TL RM Hi. TOMO SMI SRE RK ASANO RS TI EO TIED RGA, SLBA APMRO RAEN OLLI BH TOEP, LL, FM Ranis & 2 ee CARPET OREM SO ET, BLEW ARG OMA BRE LCASHR, ARTI E SRAM T SIE? HAI CIR SACS XK DICTA. BPA EARS. PEM Laat SEM MOPAR TON eh), AAP OAM T SMR, CMOS ANS LOK OETA ORS SRST eR Con They, (ayes # OG fie (dae) + at AER a > Teast Hae HOR APEY 2 TA ROE) aa A SAN FP LB OK yb RE AAS OTILIMMOMIE. PRO KIC OE SODA SORE A CP EO EH Ma ete eS MRO, TMB CK KD, CONF OPO MS WHS OMBITIRAT Sills, ZORMAA ENABLER ED WEL Ob, MBO L ED KSI. io oT yo PF VAFLEE, REMRHOAMOMISFERCMCSLEMOETT, ARTS HEAR, WAP &) ~ ea FH SE a A a + NEE AA TRAE AL OSB WR 7 BA BRM 7) Oh ARE BM CE MERA DRA NS FIO LS SMBS, KATO TIMOR SHA LoS RE, > ae Me AE BS A EE Aa BES Pa at RRA at AAFOFOMEHMAPMOMMMENCO Te, MEN KSSAORMMENTH, LOAF APFONBIOAWO MAS ORLA S. SU EMING SANA ARK i, TOMAR RIIL TK BAL ARE BOHR ISH bs RMI eae SHES OE TOUR AUT STE eG EO THEO EA, aLeeintent SERA NLM RE HGS AETESR ge (03) 5988-7657 GAPE HAEMEP EAS oo (06) 455-6467 = ARES IE a @ (03) 5988-7681 ALES @ (0764) 44-1231 T18t RRB A REN CAT Bo0%o5 RORERH & (03) 5388-7680 Oe See @ (0878) 51-0185 @ 03) 5388-7651 SVS fF (0269) 36-6740 PBRMEME RS] M (052) 204-0295 HBOS BE zm (03) 5388-7685 AINSLIE RE ott (092) 731-7132 5 J