UM2100 (R) TM ATTENUATOR AND POWER PIN DIODES 2 - 30 MHz RoHS Compliant Versions Available KEY FEATURES UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30MHz) and below. As series configured switches, these long lifetime (25s typical) diodes can control up to 2.5 kW, CW in a 50 ohm system. In HF band, insertion loss is less than 0.25dB and isolation is greater than 32dB (off-state). The UM2100 series offers the lowest distortion performance in both transmit and receive modes. Less than 50 mA forward bias is requires to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic is flat down to 2 MHz. In attenuator configuration, the UM2100 produces extremely low distortion at low values of attenuator control current, and very low insertion loss (0.2dB) in the "0dB" attenuator state. HF band (2-30 MHz) PIN IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Package Conditions O A 25 C Pin Temperature B 1/2 in. total length to 25 C Contact Free Air E O ( )Thermal Resistance ( OC/W) 25 50V 12 12.5 6 O 18.75 8 O 15 10 D 25 C Stud Temperature Low Loss (0.25dB) Very Low Distortion (IP3=60dBm) Voltage ratings to 1000 V RoHS compliant packaging 1 Available (use UMX2101B, etc.) The UM2100 series of products can be supplied with a RoHS compliant finish (UMX2100) or with a 90/10 Sn/Pb finish. Consult factory for details. 25 C End Cap Temperature ALL 1 us pulse (Single) ALL Storage Temperature (TOP) -65 OC to + 175 OC ALL Operating Temperature (TOP) -65 OC to + 175 OC 100KW APPLICATIONS/BENEFITS Isolated stud package available Surface mount package available Soldering temperature: o 260 C for 10 seconds maximum Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 UM2100 SM Copyright 2007 Rev: 2009-01-19 High Isolation (32dB) 2.5 25 25 C Stud Temperature High Power ( 1kW, CW) 1 (PD ) Power Dissapation (W) O C Long Lifetime (25s typical) www.MICROSEMI.com DESCRIPTION UM2100 (R) TM ATTENUATOR AND POWER PIN DIODES 2 - 30 MHz RoHS Compliant Versions Available VOLTAGE RATINGS @ 25C (unless otherwise specified) Part Number Reverse Voltage @ 10uA (V) UM2101 100 UM2102 200 UM2104 400 UM2106 600 UM2108 800 UM2110 1000 . www.MICROSEMI.com ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Parameter Symbol Conditions MIN. Total Capacitance CT VR=100V, F= 1 MHz Series Resistance RS If = 100 mA, F= 2 MHz Carrier Lifetime TL IF = 10 mA/100 V 20 Reverse Current IR VR = Voltage rating Intermodulation Distortion IP3 P=2W total, IF=25mA 50 F1 = 1.999 MHz F2 = 2.001 MHz 1.0 W/tone TYPICAL 1.9 1.0 25 MAX. 2.5 2.0 10 60 Units pF Ohms s A dBm Intermodulation Distortion Test Circuit DC current supply * SIGNAL GENERATOR RFC * f1 ANALYZER ELECTRICALS SPECTR POWER SPLITTER * f2 SIGNAL GENERATOR RFC * * May be controlled with the IEEE-488 bus circuit. Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 UM2100 (R) TM ATTENUATOR AND POWER PIN DIODES 2 - 30 MHz RoHS Compliant Versions Available TYPICAL RS / REACTANCE VS FREQ Rs versus If TYPICAL RESISTANCE / REACTANCE VERSUS FREQUENCY TYPICAL 102 f = 2 MHz RESISTANCE / REACTANCE (Ohms) 2.0 1 Rs (Ohms) 10 100 10-1 10-1 100 101 102 If = 100 mA 1.5 RESISTANCE 1.0 www.MICROSEMI.com TYPICAL RS VS IF 0.5 REACTANCE 0.0 If (mA) -0.5 102 103 104 105 106 107 FREQUENCY (Hz) POWER/TONE VS IF CAPACITANCE VS VOLTAGE POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT TYPICAL 40 70 CAPACITANCE VERSUS VOLTAGE TYPICAL F2 = F + 1 KHz 35 20 65 10 KHz 18 500 KHz250 KHz 150 KHz 30 60 25 55 20 50 100 KHz 16 CAPACITANCE (pF) 2 MHz 1 MHz IP3 [dBm] POWER LEVEL/TONE [dBm] F1 = F - 1 KHz 14 200 KHz 12 10 400 KHz 8 1 MHz 6 4 15 45 100 101 2 MHz 4 MHz 2 102 10 MHz 0 If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA] 10-1 100 101 102 Vr (V) GRAPHS Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 UM2100 (R) TM ATTENUATOR AND POWER PIN DIODES 2 - 30 MHz RoHS Compliant Versions Available I/V VS TEMP www.MICROSEMI.com MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE TYPICAL 10 1 100 If (A) 10-1 150C------------ 10-2 ---------------125C ---------------100C 10-3 10-4 --------------75C 10-5 -----25C 10-6 0.0 0.5 1.0 1.5 Vf (V) GRAPHS Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4 UM2100 (R) TM ATTENUATOR AND POWER PIN DIODES 2 - 30 MHz RoHS Compliant Versions Available PACKAGE STYLE `B' PACKAGE STYLE `C' PACKAGE STYLE `CR' PACKAGE STYLE `D' PACKAGE STYLE `DR' www.MICROSEMI.com PACKAGE STYLE `A' MECHANICAL Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 5 UM2100 (R) TM ATTENUATOR AND POWER PIN DIODES 2 - 30 MHz RoHS Compliant Versions Available PACKAGE STYLE `E' PACKAGE STYLE `SM' www.MICROSEMI.com STYLE `SM' FOOTPRINT 1 2 Copyright 2007 Rev: 2009-01-19 These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at least as wide as the terminals themselves, assuming accuracy of placement within 0.005" If the mounting method chosen requires use of an adhesive separate from the solder compound, a round (or square) spot of cement as shown should be centrally located. Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 MECHANICAL NOTES: Page 6