AON6144 40V N-Channel MOSFET General Description Product Summary * Trench Power MV MOSFET technology * Low RDS(ON) * Low Gate Charge ID (at VGS=10V) VDS Applications 40V 100A RDS(ON) (at VGS=10V) < 2.4m RDS(ON) (at VGS=4.5V) < 3.5m 100% UIS Tested 100% Rg Tested * Synchronous Rectification for AC-DC/DC-DC converter * Motor drive for 12V-24V systems * Oring switches DFN5x6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6144 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TC=25C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C Avalanche Current C Avalanche energy VDS Spike I L=0.3mH C 10s TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2015 40 33 A EAS 163 mJ VSPIKE 48 V 78 Steady-State Steady-State W 31 6.2 RJA RJC W 4.0 TJ, TSTG Symbol t 10s A IAS PDSM Junction and Storage Temperature Range A 32 PD TA=25C V 285 IDSM TA=70C 20 89 IDM TA=25C Units V 100 ID TC=100C Maximum 40 -55 to 150 Typ 15 40 1.3 www.aosmd.com Max 20 50 1.6 C Units C/W C/W C/W Page 1 of 6 AON6144 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A V 1 TJ=55C 1.4 100 nA 1.85 2.4 V 2.0 2.4 3.0 3.6 3.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.7 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current TJ=125C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz f=1MHz A 5 VGS=10V, ID=20A Coss Units 40 VDS=40V, VGS=0V IDSS Max m S 1 V 90 A 3780 pF 675 pF 60 pF 0.7 1.1 SWITCHING PARAMETERS Total Gate Charge Qg(10V) 50 70 nC Qg(4.5V) Total Gate Charge 22 34 Qgs Gate Source Charge VGS=10V, VDS=20V, ID=20A 0.3 m nC 11.5 nC Qgd Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, RL=1.0, RGEN=3 3.5 ns 36 ns 3 ns IF=20A, di/dt=500A/s 17 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/s 45 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: November 2015 www.aosmd.com Page 2 of 6 AON6144 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 3.5V VDS=5V 80 80 10V 60 ID (A) ID (A) 60 40 40 125C 25C 20 20 VGS=3V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 5 Normalized On-Resistance 1.8 4 RDS(ON) (m) 2 VGS=4.5V 3 2 VGS=10V 1 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 6 1.0E+01 ID=20A 1.0E+00 4 125C 1.0E-01 125C IS (A) RDS(ON) (m) 5 3 2 1.0E-02 25C 1.0E-03 25C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: November 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6144 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=20V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 40 10s 10s RDS(ON) limited 100s 1ms 10ms 10.0 DC 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 TJ(Max)=150C TC=25C 0.1 400 Power (W) ID (Amps) 30 500 100.0 300 200 100 1 VDS (Volts) 10 100 0 0.0001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10 10 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=1.6C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2015 www.aosmd.com Page 4 of 6 AON6144 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 100 Current rating ID (A) Power Dissipation (W) 80 60 40 20 80 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=50C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2015 www.aosmd.com Page 5 of 6 AON6144 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: November 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6