Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Description
The MDB series of back (tunnel) diodes are fabricated
on germanium substrates using passivated, planar
construction and gold metallization for reliable operation up
to +110 °C. Unlike the standard tunnel diode IP is minimized
for detector operation and offered in five nominal values
with varying degrees of sensitivity and video impedance.
The back detector is generally operated with zero bias and
is known for its exellent temperature stability and fast video
rise times.
Features
• Zero bias operation
• Exellent temperature stability
• Low Video Impedance
• Screening per MIL-PRF-19500
and MIL-PRF-35834 available.
Absolute Maximum Ratings
Parameters Rating
Input Power +14 dBm CW or Pulsed in a tuned detector
Operating Temperature -65 °C to +110 °C
Storage Temperature -65 °C to +125 °C
Soldering Temperature
Chip
Packaged
See chip assembly instructions on page 8
+230 °C for 5 seconds (must be hand soldered)
Chip
Electrical Specifications, TA = 25 °C
Model
I
P
C
Jγ
R
V
I
P
/ I
V
V
R
V
F
Package
MIN
μA
MAX
μA
MAX
pF
TYP
mV / mW
TYP
Ω
MIN MIN
mV
MAX
mV
MBD1057-C18 100 200 0.30 1,000 180 2.5 420 135 C18
MBD2057-C18 200 300 0.30 750 130 2.5 410 130 C18
MBD3057-C18 300 400 0.30 500 80 2.5 400 125 C18
MBD4057-C18 400 500 0.30 275 65 2.5 400 120 C18
MBD5057-C18 500 600 0.30 250 60 2.5 400 110 C18
Test Conditions
VR = VV
F =
100 MHz
PIN = -20 dBm
RL = 10 KΩ F = 10 GHz
IR =
500 μA
IF = 3 mA
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Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Package
Electrical Specifications, TA = 25 °C
Model
I
P CTγ
TYP
mV / mW
RV
TYP
Ω
IP / IV
MIN
VR
MIN
mV
VF
MAX
mV
Package
MIN
μA
MAX
μA
MAX
pF
MBD1057-E28 / 28X 100 200 0.40 1,000 180 2.5 420 135 E28 / 28X
MBD1057-H20 100 200 0.50 1,000 180 2.5 420 135 H20
MBD1057-T54 100 200 0.55 1,000 180 2.5 420 135 T54
MBD1057-T80 100 200 0.65 1,000 180 2.5 420 135 T80
MBD2057-E28 / 28X 200 300 0.40 750 130 2.5 410 130 E28 / 28X
MBD2057-H20 200 300 0.50 750 130 2.5 410 130 H20
MBD2057-T54 200 300 0.55 750 130 2.5 410 130 T54
MBD2057-T80 200 300 0.65 750 130 2.5 410 130 T80
MBD3057-E28 / 28X 300 400 0.45 500 80 2.5 400 125 E28 / 28X
MBD3057-H20 300 400 0.55 500 80 2.5 400 125 H20
MBD3057-T54 300 400 0.60 500 80 2.5 400 125 T54
MBD3057-T80 300 400 0.70 500 80 2.5 400 125 T80
MBD4057-E28 / 28X 400 500 0.50 275 65 2.5 400 120 E28 / 28X
MBD4057-H20 400 500 0.60 275 65 2.5 400 120 H20
MBD4057-T54 400 500 0.65 275 65 2.5 400 120 T54
MBD4057-T80 400 500 0.75 275 65 2.5 400 120 T80
MBD5057-E28 / 28X 500 600 0.55 250 60 2.5 400 110 E28 / 28X
MBD5057- H20 500 600 0.65 250 60 2.5 400 110 H20
MBD5057- T54 500 600 0.70 250 60 2.5 400 110 T54
MBD5057- T80 500 600 0.80 250 60 2.5 400 110 T80
Test Conditions VR = VV
F= 100 MHz
PIN = -20 dBm
RL = 10 KΩ F =10 GHz
IR =
500 μAIF = 3 mA
Back Diode Perameters Diode Equivalent Circuit
RV≅RS + Rj
CT=Cp + Cj @ 100 MHz
V
3mA
Vv
VR
IVVF
Ip
500μA
I
RjCj
Cp
LS
PACKAGE
RS
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Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance, TA = 25 °C
Rv (Ω)
PIN (dBm)
Video Resistance vs. Input Power
200
150
100
50
MBD5057
MBD2057
0
30 20 10 010
___ +
1000
750
500
250
0
200
150
100
50
0
0100 200 300 400 500
R
V
γ
γ (mV/mW)
IP (μA)
Video Impedance & Sensitivity vs. Peak Current
RV (Ω)
F =10 GHz
F = 10 GHz
RL = 10 KΩ
PIN = -20 dBm
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Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance, TA = 25 °C,
1
10
100
200
300
0.1
–40 –35 –30 –25 –20 –15 –10 –5 0 5 10
MBD3057
MBD4057
MBD5057
MBD2057
MBD1057
VOUT (mV)
Output Voltage Vs. Input Power
PIN (dBm)
F = 10 GHz
RL = 10KΩ
10 GHz RF Detector Test Circuit
TUNER
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Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance, TA = 25 °C, MDB2057
1
10
100
200
300
0.1
–40 –35 –30 –25 –20 –15 –10 –5 0 5 10
RL = 10KΩ
RL= 1KΩ
RL = 500Ω
RL = 100Ω
RL = 50Ω
RL= 10Ω
VOUT (mV)
Output Voltage vs. Temperature
PIN (dBm)
F = 10 GHz
RL = 10KΩ
+ 100° C
– 55° C
RL = 100Ω
1
10
100
200
300
0.1
–40 –35 –30 –25 –20 –15 –10 –5 0 5 10
VOUT (mV)
Output Voltage vs. Input Power
PIN (dBm)
F = 10 GHz
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Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Typical Performance, TA = 25 °C, MDB5057
RL = 10KΩ
RL= 1KΩ
RL = 100ΩRL = 50Ω
RL= 10Ω
1
10
100
200
300
0.1
–40 –35 –30 –25 –20 –15 –10 –5 0 5 10
VOUT (mV)
Output Voltage vs. Input Power
PIN (dBm)
F = 10 GHz
VOUT (mV)
Output Voltage vs Temperature
PIN (dBm)
1
10
100
200
300
0.1
–40 –35 –30 –25 –20 –15 –10 –5 0 5 10
+ 100 °C
– 55 °C
RL = 10KΩ
RL = 100KΩ
RL = 10Ω
F = 10 GHz
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E28X
(non-hermetic)
E28
(non-hermetic)
0805-2
(non-hermetic)
C18
Revision Date: 12/01/05
Planar Back (Tunnel) Diodes
MBD Series
Outline Drawings
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85 [2.159]
75 [1.905]
55 [1.397]
45 [1.143]
Epoxy
Cathode Dot
33 [0.838]
27 [0.686]
16 [0.406]
12 [0.305]
40 [1.016] Min.
50 [1.270] Max.
Gold Metalization
Bottom View
Ceramic
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Aerofl ex / Metelics
Aerofl ex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aerofl ex-metelics.com sales@aerofl ex-metelics.com
Aerofl ex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aerofl ex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aerofl ex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aerofl ex; nor does the purchase, lease, or use of a product or service from
Aerofl ex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aerofl ex or of third parties.
Copyright 2003 Aerofl ex / Metelics. All rights reserved.
Our passion for performance is defi ned by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Revision Date: 12/01/05 A17077 (-)
Planar Back (Tunnel) Diodes
MBD Series
Outline Drawings (Continued)
T80
(hermetic)
T54
(hermetic)
]156.1[56
]7
93.
1[55
.a
i
D]051
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21
]799
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[
81
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.
xa
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cimareC
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Cathode (T80)
]811.1[44
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6
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0[43
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cimareC
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.aiD]481.2[68
]
18
9
.
1
[8
7
]503.0[21
]452.0[01
Cathode (T54)
CHIP ASSEMBLY
The germanium planar back (tunnel) diode is sensitive to mechanical pressure and high temperatures.
Die attach: Conductive epoxy only with maximum curing temperatue of +125°C
Wire Bond:0.7 mil Gold wire and thermo-compression wedge bond within the following:
Stage Temperature: +155 °C maximum for 20 seconds max
Tip Temperature: +160 °C maximum
Bonding Pressure: 20 grams maximum
Bonding is performed on the larger diameter offset bonding pad (see figure 1)
and not over the junction.
.0007”
GOLD BOND WIRE
THERMOCOMPRESSION
WEDGE BOND
JUNCTION
figure 1
