ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * Extremely low equivalent on-resistance; RSAT = 39mV at 5A SOT223 * 5.5 amps continuous current * Up to 15 amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps APPLICATIONS * DC - DC Converters * MOSFET gate drivers * Charging circuits * Power switches * Motor control PINOUT ORDERING INFORMATION DEVICE ZX5T951GTA ZX5T951GTC REEL SIZE 7" 13" TAPE WIDTH QUANTITY PER REEL 12mm 1000 units embossed 4000 units TOP VIEW DEVICE MARKING * X5T951 ISSUE 2 - SEPTEMBER 2003 1 SEMICONDUCTORS ZX5T951G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -100 V Collector-emitter voltage BV CEO -60 V Emitter-base voltage BV EBO -7 V Continuous collector current IC -5.5 A Peak pulse current Power dissipation at T A =25C (a) I CM -15 A PD 3.0 W Linear derating factor Power dissipation at T A =25C (b) Linear derating factor 24 mW/C PD 1.6 W 12.8 mW/C Operating and storage temperature range T j , T stg -55 to +150 C THERMAL RESISTANCE PARAMETER Junction to ambient SYMBOL (a) R JA VALUE UNIT 42 C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - SEPTEMBER 2003 SEMICONDUCTORS 2 ZX5T951G CHARACTERISTICS ISSUE 2 - SEPTEMBER 2003 3 SEMICONDUCTORS ZX5T951G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -100 -120 Collector-emitter breakdown voltage BV CER -100 -120 V I C =-1A, RB1k Collector-emitter breakdown voltage BV CEO -60 -80 V I C =-10mA* Emitter-base breakdown voltage BV EBO -7 -8.1 Collector cut-off current I CBO Collector cut-off current 1 1 I CER R 1k MAX. UNIT CONDITIONS V I C =-100A V I E =-100A -20 nA V CB =-80V -0.5 A VCB=-80V,Tamb=100C -20 nA V CB =-80V -0.5 A VCB=-80V,Tamb=100C V EB =-6V Emitter cut-off current I EBO 1 -10 nA Collector-emitter saturation voltage V CE(SAT) -15 -25 mV I C =-0.1A, I B =-10mA* -55 -70 mV IC=-1A, IB=-100mA* -90 -120 mV IC=-2A, IB=-200mA* -195 -250 mV IC=-5A, IB=-500mA* Base-emitter saturation voltage V BE(SAT) -1030 -1150 mV I C =-5A, I B =-500mA* Base-emitter turn-on voltage V BE(ON) -920 -1020 mV I C =-5A, V CE =-1V* Static forward current transfer ratio H FE 100 250 100 200 45 90 IC=-5A, VCE=-1V* 10 25 IC=-10A, VCE=-1V* 120 I C =-10mA, V CE =-1V* IC=-2A, VCE=-1V* 300 MHz I C =-100mA, V CE =-10V Transition frequency fT Output capacitance C OBO 48 pF Switching times t ON 39 ns t OFF 370 f=50MHz V CB =-10V, f=1MHz* I C =1A, V CC =10V, I B1 =I B2 =100mA * Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ISSUE 2 - SEPTEMBER 2003 SEMICONDUCTORS 4 ZX5T951G TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2003 5 SEMICONDUCTORS ZX5T951G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E b2 2.90 3.10 0.114 0.122 C 0.23 0.33 0.009 0.013 D 6.30 6.70 0.248 0.264 6.70 7.30 0.264 0.287 E1 3.30 3.70 0.130 0.146 L 0.90 - 0.355 - - - - - - (c) Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - SEPTEMBER 2003 SEMICONDUCTORS 6