MITSUBISHI LASER DIODES
ML7xx36 SERIES
1310nm InGaAsP FP LASER DIODES
TYPE
NAME ML720AA36S , ML725AA36F
DESCRIPTION
ML7XX36 series are InGaAsP laser diodes which provide
a stable, single transverse mode oscillation with emission
wavelength of 1310nm and standard continuous light output
of 13mW.
ML7XX36 are hermetically sealed devices having the photo
diode for optical output monitoring. This is suitable for such
applications as FTTH PON(Fiber to the Home passive Optical
Network)systems.
FEATURES
•1310nm typical emission wavelength, FP-LDs
•Wide temperature range operation(-40 to 85ºC)
•φ5.6mm TO-CA N with Ball Lens
•High Coupling Power to the fiber (Pf=2.6mW,Typ.)
•Focal Point of Fiber Coupling (DF=6.7mm,Typ.)
APPLICATION
•FTTH PON system
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
PL Light output power * CW 18 mW
VRL Laser reverse voltage - 2 V
VRD PD reverse voltage - 20 V
IFD PD forward current - 2 mA
Tc Operation temperature -
-40 to +85 ºC
Tstg Storage temperature -
-40 to +125 ºC
* Total output from the lens
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ith Threshold current CW --- 5 10 mA
Iop Operation current CW, PL=13mW --- 35 45 mA
Vop Operating voltage CW, PL=13mW --- 1.2 1.5 V
η Slope efficiency CW, PL=13mW 0.35 0.48 --- mW/mA
λc Center wavelength CW, PL=13mW 1290 1310 1330 nm
∆λ Spectral Width CW, PL=13mW,RMS(-20dB) --- 1.5 3.0 nm
Pf CW, PL=13mW,SI10/125
1.3 2.6 --- mW
Df
Fiber Coupling characteristics
at peak coupling<1> CW, PL=13mW,SI10/125 5.7 6.7 7.3 mm
tr,tf Rise and Fall time (10%-90%) Ib=Ith,PL=13mW,10-90% --- 0.3 0.7 nsec
Im Monitor Current (PD) CW, PL=13mW, VRD=1V, 0.05 0.2 0.6 mA
Id Dark Current (PD) VRD=10V --- --- 0.1 µA
Ct Capacitance (PD) VRD=10V, f=1MHz --- 10 20 pF
Note : <1> Df is a distance between reference plane of the base to the fiber.
MITSUBISHI
ELECTRIC
May 20
0
4
Notice: Some parametric limits are subject to change
ML720AA36S
ML725AA36F
MITSUBISHI
ELECTRIC
M
a
y
20
0
4
MITSUBISHI LASER DIODES
ML7xx36 SERIES
1310nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
(1)
φ2.0±0.01
φ3.55±0.1
φ5.6 -0.03
1.27
18 ±1
3.87±0.1
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(3.0)
(6.7)
±0.03
(Dimension:mm) Case
(1) (2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
ML720AA36S
ML725AA36F
Case
(1) (2)
(3)
(4)
PD
LD
