GS1A THRU GS1M
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S048
Rev. 2.5, 07-Jan-21
www.21yangjie.com
Surface Mount General Purpose Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in general purpose rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Data
● Package: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: Cathode line denotes the cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT GS1A GS1B GS1D GS1G GS1J GS1K GS1M
Device marking code GS1A GS1B GS1D GS1G GS1J GS1K GS1M
Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000
Maximum RMS Voltage VRMS V 35 70 140 280 420 560 700
Maximum DC blocking Voltage VDC V 50 100 200 400 600 800 1000
verage rectified output current
@60Hz sine wave, resistance load, TL (Fig.1) IO A 1.0
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃ IFSM A
30
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃ 60
Current squared time
@1ms≤t8.3≤ms Tj=25℃,Rating of per diode I2t A2s 3.735
Typical junction capacitance
@Measured at 1MHz and Applied Reverse Voltage
of 4.0 V.D.C
Cj pF 8
Storage temperature Tstg ℃ -55 ~ +150
Junction temperature Tj ℃ -55 ~ +150
■Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT TEST
CONDITIONS GS1A GS1B GS1D GS1G GS1J GS1K GS1M
Maximum instantaneous
forward voltage drop per diode VF V IFM=1.0A 1.1
Maximum DC reverse current at
rated DC blocking voltage per diode IR μA
Tj =25℃ 5
Tj =125℃ 100
COMPLIANT
RoHS