A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25°C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 200 mA 65 V
BVCES IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 200 mA 5.0 200 ---
Cob VCB = 30 V f = 1.0 MHz 15 pF
PG
η
ηη
ηC VCC = 28 V POUT = 10 W f = 175 MHz
PIN = 1.0 W
10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB10-28S
DESCRIPTION:
The ASI VHB10-28S is an NPN power transistor
designed for 138-175 MHz VHF communications.
It utilizes emitter ballasting to provide high VSWR
handling capability.
FEATURES:
• Common Emit t er, 28 V operation
• PG = 10 dB at 10W/175 MHz
• Omnigold™ Metalization System
• High VSWR capability
MAXIMUM RATINGS
IC 1.0 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 13.0 W
TJ -65 °OC to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 13.5 °C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10723
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UN C -2A
C
B
E E
