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2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0

November 2014

2N4401 / MMBT4401

NPN General-Purpose Amplifier

Ordering Information

Figure 1. 2N4401 Device Package Figure 2. MMBT4401 Device Package

Part Number Marking Package Packing Method

2N4401BU 2N4401 TO- 92 3L Bulk

2N4401TF 2N4401 TO-92 3L Tape and Reel

2N4401TFR 2N4401 TO-92 3L Tape and Reel

2N4401TA 2N4401 TO-92 3L Ammo

2N4401TAR 2N4401 TO- 92 3L Ammo

MMBT4401 2X SOT-23 3L Tape and Reel

EBC TO-92

SOT-23

Mark:2X

Description

This device is designed for use as a medium power

amplifier and switch requiring collector currents up to

500 mA.

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 2

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or

low-duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 1.6 inc h x 1.6 inch x 0.06 inch.

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 60 V

VEBO Emitter -Base Voltage 6.0 V

ICCollector Current - Continuous 600 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter Max. Unit

2N4401(3) MMBT4401(4)

PDTotal Device Dissipation 625 350 mW

Derate Above 25°C 5.0 2.8 mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 3

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

V(BR)CEO Collector-Emitter Breakdown

Voltage(5) IC = 1.0 mA, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown

Voltage IC = 0.1 mA, IE = 0 60 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V

IBL Base Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA

ICEX Collector Cut-Off Curren t VCE = 35 V, VEB = 0.4 V 0.1 μA

hFE DC Current Gain(5)

IC = 0.1 mA, VCE = 1.0 V 20

IC = 1.0 mA, VCE = 1.0 V 40

IC = 10 mA, VCE = 1.0 V 80

IC = 150 mA, VCE = 1.0 V 100 300

IC = 500 mA, VCE = 2.0 V 40

VCE(sat) Collector-Emitter Saturation

Voltage(5) IC = 150 mA, IB = 15 mA 0.40 V

IC = 500 mA, IB = 50 mA 0.75

VBE(sat) Base-Emitter Saturation Voltage(5) IC = 150 mA, IB = 15 mA 0.75 0.95 V

IC = 500 mA, IB = 50 mA 1.20

fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,

f = 100 MHz 250 MHz

Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0,

f = 140 kHz 6.5 pF

Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0,

f = 140 kHz 30 pF

hie Input Impedance IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz 1.0 15.0 kΩ

hre Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz 0.1 8.0 x10-4

hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz 40 500

hoe Output Admittance IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz 1.0 30 μmhos

tdDelay Time VCC = 30 V, VEB = 2 V,

IC = 150 mA, IB1 = 15 mA 15 ns

trRise Time 20 ns

tsStorage Time VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA 225 ns

tfFall Time 30 ns

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 4

Typical Performance Characteristics

Figure 3. Typical Pulsed Current Gain vs.

Collector Current Figure 4. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 5. Base-Emitter Saturation Voltage

vs. Collector Current Figure 6. Base-Emitter On Voltage vs.

Collector Current

Figure 7. Collector Cut-Off Current vs.

Ambient Temperature Figure 8. Emitter Transition and Output Capacitance

vs. Reverse Bias Voltage

0.1 0.3 1 3 10 30 100 300

100

200

300

400

500

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

V = 5V

110100500

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CE S AT

25 °C

β= 10

125 °C

- 40 °C

1 10 100 500

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAGE (V)

BESAT

β= 10

25 °C

125 °C

- 40 °C

0.1 1 10 25

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE (ON )

V = 5V

25 °C

125 °C

- 40 °C

25 50 75 100 125 150

0.1

100

500

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

V = 40V

CBO

0.1 1 10 100

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz

Cob

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 5

Typical Performance Characteristics (Continued)

Figure 9. Turn-On and Turn-Off Times vs.

Collector Current Figure 10. Switching Times vs.Collector Current

Figure 11. Power Dissipation vs.

Ambient Temperature Figure 12. Common Emitter Characteristics

Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics

10 100 1000

160

240

320

400

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

ton

off

V = 25 V

10 100 1000

160

240

320

400

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

V = 25 V

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

TO-92

SOT-23

0 102030405060

I - COLLECTOR CURRENT (mA)

CHAR. RELATIVE TO VALU ES AT I = 10mA

V = 10 V

T = 25 C

A o

hoe

hre

hfe

hie

0 20406080100

0.4

0.8

1.2

1.6

2.4

T - AMBIENT TEMPERATURE ( C)

CHAR. RELATIVE TO VALUES AT T = 25 C

V = 10 V

I = 10 mA

hoe

hre

hfe

hie

0 5 10 15 20 25 30 35

0.75

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

1.25

1.3

V - COLLECTOR VOLTAGE (V)

CHAR. RELATIVE TO VALUES AT V = 10V

T = 25 C

A o

hoe

hre

hfe

h ie

I = 10 mA

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 6

Physical Dimensions

Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 7

Physical Dimensions (Continued)

Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type

2N4401 / MMBT4401 — NPN General-Purpose Amplifier

2N4401 / MMBT4401 Rev. 1.1.0 8

Physical Dimensions (Continued)

Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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