
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6661US thru 1N6663US
1N6661US - 1N6663US
DESCRIPTION APPEARANCE
These “standard recovery” rectifier diodes are military qualified to MIL-PRF- 19500/587
and is ideal for high-reliability applications where a failure cann ot be tolerated. They
have a 500 mA rating with working p eak reverse voltages from 225 to 600 volts and
are hermetically sealed with void-less-glass construction using an internal “Category I”
metallurgical bond. T he axial-leaded package configurations are also available by
deleting the “US” suffix (see separate data sheet for 1N6661 to 1N6663). Microsemi
also offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requir eme nts including Fast and Ultrafast device
types in both through-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N6661 thru 1N6663 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 225 to 600 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/587
• Axial-leaded equivalents also available without the
“US” suffix (see 1N6661 thru 1N6663)
• Standard recovery 0.5 Amp rectifiers 225 to 600 V
• Military and other high-reliability applications
• General rectifier applications inclu din g bridges, half-
bridges, catch diodes, etc.
• Forward surge current capability
• Extremely robust construction
• Low thermal resistance in small MELF package
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 35oC/W junction to en d cap
• Average Rectified For ward Current (IO): 0.5 Amps @
TEC = 110ºC and 0.150 Amps at T EC = 150ºC
• Forward Surge Current: 5 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed void-less hard glass
with Tungsten slugs
• TERMINATIONS: End caps are copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body paint
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 84 mg (approx)
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 100μA
AVERAGE
RECTIFIED
CURRENT
(NOTE 2)
IO
MAXIMUM
FORWARD
VOLTAGE
VF @ 0.4 A
(PULSED)
MAXIMUM REVERSE
CURRENT
IR @ VRWM
MAXIMUM
SURGE
CURRENT
(NOTE 1)
IFSM
VOLTS VOLTS AMPS VOLTS μA AMPS
25oC 150oC 25oC 150oC
1N6661US
1N6662US
1N6663US
225
400
600
270
480
720
0.5
0.5
0.5
0.15
0.15
0.15
1.0
1.0
1.0
0.05
0.05
0.05
300
300
300
5
5
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals
NOTE 2: Linearly derate at 8.75 mA/ºC between TEC = 110ºC to 150ºC and 6.0 mA/ºC between TEC = 150ºC to 175ºC
Microsemi
Scottsdale Division Page 1
Copyright © 2008
1-03-2008 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503