∗hFE Rank O(50to100), P(70to140), Y(90to180)
18
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
–5
–15
–4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1386
–100max
–160
–160min
Unit
µ
A
V
µ
A
V
V
MHz
pF
Conditions
VCB=
VEB=–5V
IC=–25mA
VCE=–4V, IC=–5A
IC=–5A, IB=–0.5A
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
LAPT
2SA1386/1386A
(Ta=25°C)
(Ta=25°C)
VCC
(V)
–40
RL
(Ω)
4
IC
(A)
–10
VBB2
(V)
5
IB2
(A)
1
ton
(
µ
s)
0.3typ
tstg
(
µ
s)
0.7typ
tf
(
µ
s)
0.2typ
IB1
(A)
–1
VBB1
(V)
–10
2SA1386A
–100max
–180
–180min
–100max
50min∗
–2.0max
40typ
500typ
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–50mA
–100mA
I
B
=–20mA
–700mA
–500mA
–400mA
–300mA
–200mA
–150mA
0
–3
–2
–1
0 –0.2 –0.4 –1.0–0.6 –0.8
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
–0.02 –0.1 –1 –10–0.5 –5 –15
10
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–3 –10 –50 –100 –200
–0.1
–0.05
–1
–0.5
–10
–40
–5
10ms
Without Heatsink
Natural Cooling
1.2SA1386
2.2SA1386A
12
DC
0.02 0.1 1 10
0
20
40
60
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
fT–IE Characteristics
(Typical)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
0
–15
–10
–5
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –15
20
50
100
200
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
θj-a–t Characteristics
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
2SA1386
–160
–160
2SA1386A
–180
–180
