TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device TN2425 Package Option RDS(ON) ID(ON) (V) (max) () (min) (A) 250 3.5 1.5 BVDSS/BVDGS TO-243AA (SOT-89) TN2425N8-G -G indicates package is RoHS compliant (`Green') Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55OC to +150OC 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Pin Configuration DRAIN GATE SOURCE DRAIN TO-243AA (SOT-89) (N8) Product Marking TN4CW W = Code for Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN2425 Thermal Characteristics ID ID Power Dissipation jc Package (continuous) (mA) (pulsed) (A) @TA = 25OC (W) ( C/W) TO-243AA (SOT-89) 480 1.9 1.6 15 O ( C/W) IDR (mA) IDRM 78 480 1.9 O ja Notes: ID (continuous) is limited by max rated Tj . Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 250 - - V VGS = 0V, ID = 250A VGS(th) Gate threshold voltage 0.8 - 2.5 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -5.5 Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8Max Rating, VGS = 0V, TA = 125OC 0.8 - - 1.5 - - - - 6.0 - - 5.0 - - 3.5 - - 1.7 500 - - VGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature %/ C Input capacitance - 105 200 COSS Common source output capacitance - 25 100 CRSS Reverse transfer capacitance - 7.0 40 td(ON) Turn-on delay time - 5.0 15 Rise time - 10 25 Turn-off delay time - 25 35 Fall time - 5.0 15 Diode forward voltage drop - - Reverse recovery time - 300 VSD trr VGS = 10V, VDS = 25V VGS = 4.5V, ID = 250mA VGS = 10V, ID = 500mA O CISS tf VGS = 4.5V, VDS = 25V VGS = 3.0V, ID = 150mA Forward transductance td(OFF) mV/OC VGS = VDS, ID= 1.0mA A GFS tr Conditions VGS = 10V, ID = 500mA mmho VDS = 25V, ID = 250mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 500mA, RGEN = 25 1.5 V VGS = 0V, ISD = 500mA - ns VGS = 0V, ISD = 500mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RL OUTPUT RGEN tF D.U.T. 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 (A) TN2425 Typical Performance Curves Output Characteristics Saturation Characteristics 2.5 4 VGS = 10V 8V 6V 3 5V 2 ID (Amperes) ID (Amperes) VGS = 10V 8V 6V 5V 3.0 5 4V 2.0 4V 1.5 1.0 3V 1 0 0.5 3V 2.5V 0 10 20 30 40 2.5V 0.0 0 50 2 4 VDS (Volts) Transconductance vs. Drain Current 10 Power Dissipation vs. Ambient Temperature 2.0 V DS =15V T A =-55 O C TO-243AA 0.8 1.5 T A =25 O C 0.6 PD (Watts) GFS (siemens) 8 VDS (Volts) 1.0 T A =125 O C 0.4 0.0 0.0 0.5 1.0 1.5 0.0 2.0 25 50 75 100 125 ID (Amperes) Maximum Rated Safe Operating Area Thermal Response Characteristics 150 1.0 Thermal Resistance (normalized) TO-243AA (pulsed) TO-243AA (DC) 0.1 0.01 T A =25 O C 0.001 1 0 TA (O C) 10 1.0 1.0 0.5 0.2 ID (amperes) 6 10 100 0.8 VDS (Volts) T C = 25 O C 0.6 0.4 0.2 0 0.001 1000 TO-243AA P D = 1.6W 0.01 0.1 1.0 10 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TN2425 Typical Performance Curves (cont.) On Resistance vs. Drain Current BVDSS Variation with Temperature 1.2 10 VGS = 4.5V 8 1.1 RDS(ON) (ohms) 1.0 0.9 6 4 VGS = 10V 2 0 0.8 -50 0 50 100 150 0 1 2 TJ ( C) Transfer Characteristics 3.0 2.0 TA = 25OC 4 VGS(TH) and RDS(ON) w/ Temperature VGS(th) (normalized) ID (Amperes) TA = -55OC 1.5 1.0 1.4 1.2 1.2 1.0 0.8 VDS = 25V 0.5 0.0 0 2 4 6 8 VGS (Volts) 0.4 -50 10 10 f = 1MHz CISS VGS (volts) C (picofarads) 0 100 50 20 30 VDS (Volts) 40 TJ (OC) 100 0.6 150 VDS = 40V 453pF 4 0 0.0 50 VDS = 10V 6 2 COSS 10 50 ID = 480mA 8 150 0 0.9 Gate Drive Dynamic Characteristics Capacitance vs. Drain Source Voltage 0 VGS(th) @ 1mA 0.6 200 CRSS 1.8 1.5 1.6 TA = 125OC 2.0 5 RDS(ON) @ 10V, 0.5A 1.8 2.5 3 ID (Amperes) O 128pF 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) BVDSS (normalized) BV @ 250A TN2425 3-Lead TO-243AA (SOT-89) Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version E051509. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2425 A051909 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com