MBR10100CE
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 100
FORWARD CURRENT – 10 Amperes
FEATURES
•
Metal of silicon rectifier, majority carrier conduction
•
Guard ring for transient protection
•
Low power loss, high efficiency
•
High surge¤t capability, low VF
•
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
•
Case: TO-262AA molded plastic
•
Plastic package has UL flammability classification
94V-0
•
Terminals: Solderable per MIL-STD-202 Method 208
•
Moisture sensitivity: level 1 per J-STD-020D
•
Lead Free Finish, RoHS Compliant
•
Polarity: As marked on the body
•
Weight: 0.0571 ounces, 1.62 grams
•
Mounting position: Any
I
2
PAK
I
2
PAK
DIM. MIN. MAX.
A 9.65
10.69
B 1.14 1.40
C 8.25
9.25
D - 1.40
F - 4.20
G 12.70
14.73
H 2.29
2.79
I 0.51
1.14
J 0.3 0.64
K 3.56
4.83
N 2.03
2.92
O 1.14 1.70
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
PARAMETER SYMBOL
MBR10100CE UNIT
Maximum Repetitive Peak Reverse Voltage V
RRM
100 V
Maximum RMS Voltage V
RMS
70 V
Maximum DC Blocking Voltage V
DC
100 V
Average Rectified Output Current @Tc=115°C I
F(AV)
10 A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load I
FSM
120 A
Maximum Forward Voltage
Note(1)
IF=5A@
IF=5A@
IF=10A@
IF=10A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
0.85
0.75
0.95
0.85
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C IR 0.01
15 mA
Typical thermal resistance Junction to Case R
Θ
JC
5 °C/W
Typical thermal resistance Junction to Lead R
Θ
JL
5.5 °C/W
Operating junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
Note : Rev.4, Sep-2012, KTHA19
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 V
DC
.
(3) Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with 30 x 30 x 1 copper plate
heatsink, pad.