PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 - 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 21 65 20 55 Gain Gain (dB) 45 18 35 17 25 16 15 Efficiency 15 Drain Efficiency (%) VDD = 30 V, IDQ = 1.9 A, = 765 MHz 5 30 35 40 45 50 PTFA072401FL Package H-34288-2 Features Gain & Efficiency vs. Output Power 19 PTFA072401EL Package H-33288-2 55 * Broadband internal matching * Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear gain = 19 dB - Efficiency = 25% - Intermodulation distortion = -39 dBc * Typical CW performance, 770 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 58% * Integrated ESD protection * Excellent thermal stability, low HCI drift * Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power * Thermally-enhanced packages, Pb-free and RoHS compliant with low gold (<0.25 micron) plating Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average, 1 = 760 MHz, 2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps -- 19 -- dB Drain Efficiency hD -- 25 -- % Intermodulation Distortion IMD -- -39 -- dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet - DRAFT ONLY 1 of 9 Rev. 04, 2012-02-16 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, = 765 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 -- dB Drain Efficiency hD 43 45 -- % Intermodulation Distortion IMD -- -29 -28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 1.82 -- W Operating Gate Voltage VDS = 30 V, IDQ = 1800 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -0.5 to +12 V Junction Temperature TJ 200 C Total Device Dissipation PD 700 W Above 25C derate by 4.0 W/C Storage Temperature Range TSTG -40 to +150 Thermal Resistance (TCASE = 70C, 240 W CW) RqJC 0.28 Unit C C/W Ordering Information Type and Version Order Code Package Package Description Shipping PTFA072401EL V5 PTFA072401ELV5XWSA1 H-33288-2 Slotted flange Tray PTFA072401FL V5 PTFA072401FLV5XWSA1 H-34288-2 Earless flange Tray Data Sheet - DRAFT ONLY 2 of 9 Rev. 04, 2012-02-16 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Broadband Performance Two-tone Drive-up VDD = 30 V, IDQ = 1800 mA, POUT = 126 W -5 Efficiency -10 40 Return Loss -15 -20 30 25 -25 Gain -30 20 700 730 760 50 -30 45 -35 -40 -45 30 -50 25 -55 15 42 790 44 46 52 54 56 VDD = 30 V, IDQ = 1.9 A, = 765 MHz -20 60 IDQ = 2.0 A Drain Efficiency (%) Power Gain (dB) 50 Two-carrier WCDMA Performance IDQ = 2.2 A 19 IDQ = 1.8 A IDQ = 1.6 A IDQ = 1.4 A 17 48 Output Power, PEP (dBm) Power Sweep 18 20 IM7 VDD = 30 V, = 770 MHz 20 35 IM5 Efficiency Frequency (MHz) 21 40 IM3 -60 -35 15 -25 TCASE = 25C TCASE = 90C 50 -25 -30 40 IM3 -35 -40 30 -45 20 -50 ACPR 10 16 -55 Efficiency -60 0 15 30 35 40 45 Output Power (dBm) Data Sheet - DRAFT ONLY 50 30 55 IMD, ACPR (dBc) 35 Input Return Loss (dB) Gain (dB), Efficiency (%) 45 Intermodulation Distortion (dBc) 0 50 Drain Efficiency (%) VDD = 30 V, IDQ = 1800 mA, = 765 MHz, tone spacing = 1 MHz 32 34 36 38 40 42 44 46 48 50 Output Power (dBm) 3 of 9 Rev. 04, 2012-02-16 0. 6 0. 0. 0 5 4 0. 45 zed to 50 Ohms Broadband Circuit Impedance 0. Confidential, Limited Internal Distribution PTFA072401EL PTFA072401FL 0. 72401efl 5 1efl Feb. 26, 2009 3:00:22 PM 3 R --> Z0 = 50 RD G E NE RA T O Z Load W MHz R jX R jX 725 2.53 -4.83 1.64 -1.54 736 2.48 -4.64 1.55 -1.48 748 2.44 -4.41 1.46 -1.33 759 2.41 -4.22 1.42 -1.17 770 2.37 -4.04 1.36 -1.11 0.5 0.4 0.3 0.2 0.1 0.0 Z Source 770 MHz 725 MHz Z Load 770 MHz 725 MHz 0.1 E W AV <--- Z Source W W ARD LOA D T HS T O L E NG - W AV E LE NGT H S T OW A S 0 .1 Z Load G Frequency 0. 2 D Z Source 0. 2 0. 3 0. 4 0. 7 0. 6 0. 5 0. 45 0. 05 See next page for reference circuit information 0. 1 0 Data Sheet - DRAFT ONLY 4 of 9 Rev. 04, 2012-02-16 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Reference Circuit C1 0.001F R2 1.3K R1 1.2K QQ1 LM7805 VDD Q1 BCP56 C2 0.001F C3 0.001F R3 2K R4 2K R9 2K R5 10 C4 0.1F R6 10 C5 10F 35V L1 VDD R7 5.1K C6 4.7F C8 62pF C7 0.1F R8 10 1 C22 3.9pF 6 3 C10 3.9pF C16 10F 35V 7 DUT 2 C15 0.1F C14 10F C13 2.2F 4 C9 62pF J1 C12 62pF 5 C11 9.1pF 9 10 l 11 C24 62pF 13 l 12 J2 C23 3.9pF 8 L2 C17 62pF C18 2.2F C19 10F C20 0.1F C21 10F 35V Reference circuit schematic for = 770 MHz Circuit Assembly Information DUT PTFA072401EL or PTFA072401FL LDMOS Transistor PCB LTN/PTFA072401E or LTN/PTFA072401F Rogers RO4350: 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 770 MHz l1 0.025 , 50.7 W 5.84 x 1.65 0.230 x 0.065 l2, l3 0.048 , 38.4 W 11.18 x 2.54 0.440 x 0.100 l4 0.002 , 76.8 W 0.51 x 0.76 0.020 x 0.030 l5 0.145 , 76.8 W 35.43 x 0.76 1.395 x 0.030 l6 0.094 , 7.8 W 20.32 x 17.78 0.800 x 0.700 l7, l8 0.108 , 44.5 W 25.40 x 2.03 1.000 x 0.080 l9 0.140 , 6.5 W 29.97 x 21.59 1.180 x 0.850 l10 (taper) 0.058 , 6.5 W / 29.4 W 13.13 x 21.59 / 3.68 0.517 x 0.850 / 0.145 l11 (taper) 0.004 , 29.4 W / 38.4 W 0.84 x 3.68 / 2.54 0.033 x 0.145 / 0.100 l12 0.005 , 38.4 W 1.27 x 2.54 0.050 x 0.100 l13 0.016 , 50.7 W 3.76 x 1.65 0.148 x 0.065 Data Sheet - DRAFT ONLY 5 of 9 Rev. 04, 2012-02-16 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD VDD LM RF_IN RF_OUT VDD a 0 7 2 4 0 1 e fl _ c d_ 3 - 1 8 - 0 9 Reference circuit assembly diagram (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 F Digi-Key PCC1772CT-ND C4, C7, C15, C20 Capacitor, 0.1 F Digi-Key PCC104BCT-ND C5, Tantalum Capacitor, 10 F, 35 V Digi-Key 399-1655-2-ND C6 Capacitor, 4.7 F, 16 V Digi-Key PCS3475CT-ND C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF ATC 100B 620 C10, C22, C23 Ceramic capacitor, 3.9 pF ATC 100B 3R9 C11 Ceramic capacitor, 9.1 pF ATC 100B 9R1 C13, C18 Capacitor, 2.2 F Digi-Key 445-1447-2-ND C14, C16, C19, C21 Tantalum Capacitor, 10 F, 35 V Digi-Key PCS6106TR-ND L1, L2 Ferrite, 8.9 mm Digi-Key 240-2511-2-ND Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage Regulator National Semiconductor LM7805 R1 Chip resistor, 1.2k W Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3k W Digi-Key P1.3KGCT-ND R3, R9 Chip resistor, 2k W Digi-Key P2KECT-ND R4 Variable Resistor 2k W Digi-Key 3224W-202ETR-ND R5, R6, R8 Chip resistor, 10 W Digi-Key P10ECT-ND R7 Chip resistor 5.1k W Digi-Key P5.1KECT-ND Data Sheet - DRAFT ONLY 6 of 9 Rev. 04, 2012-02-16 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-2 45 X 2.032 [45 X . 080] 2X 4.826.510 [. 190.020] CL D 4X R1.524 [R.060] S CL 2X R1.626 [R.064] 9.398 [.370] 9.779 [.385] 19.431.510 [.765.020 ] G H- 33288- 2_po_03 -01- 2011 2X 12.700 [.500] 27.940 [1.100] 1.016 [.040] 1. 575 [.062] SPH 3.962+.254 -.127 22.352.200 [.880. 008] +.010 [. 156 -.005 ] CL 34. 036 [1.340 ] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D - drain; S - source; G - gate. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Data Sheet - DRAFT ONLY 7 of 9 Rev. 04, 2012-02-16 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-2 45 X 2.032 [45 X .080] C L 015 4X R0.508+. -.005 2X 4.826.510 [.190.020] D 001 [R.020+. -.000] 9.398 [.370] C L 9.779 [.385] 19.431.510 [.765.020] G H - 34288 -2 _po _02 - 18- 2010 2X 12.700 [.500] 3.962+.254 -. 127 22.352.200 [.880.008] 1.016 [.040] 1.575 [.062] SPH [.156+.010 -.005 ] C L 23.114 [.910] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D - drain; S - source; G - gate. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet - DRAFT ONLY 8 of 9 Rev. 04, 2012-02-16 PTFA072401EL/FL V5 Confidential, Limited Internal Distribution Revision History: 2012-02-16 Previous Version: 2011-04-01, Data Sheet Page Subjects (major changes since last revision) 2 Updated product from V4 to V5, added order code Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2012-02-16 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet - DRAFT ONLY 9 of 9 Rev. 04, 2012-02-16