DATA SH EET
Product specification
Supersedes data of 1999 Apr 23 2004 Oct 11
DISCRETE SEMICONDUCTORS
2N3906
PNP switching transistor
b
ook, halfpage
M3D186
2004 Oct 11 2
Philips Semiconductors Product specification
PNP switching transistor 2N3906
FEATURES
Low current (max. 200 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed switching in industrial applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N3904.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM280
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
2N3906 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−40 V
VCEO collector-emitter voltage open base −−40 V
VEBO emitter-base voltage open collector −−6V
ICcollector current (DC) −−200 mA
ICM peak collector current −−300 mA
IBM peak base current −−100 mA
Ptot total power dissipation Tamb 25 °C500 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W
2004 Oct 11 3
Philips Semiconductors Product specification
PNP switching transistor 2N3906
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current VCB =30 V; IE=0 A −−50 nA
IEBO emitter-base cut-off current VEB =6 V; IC=0 A −−50 nA
hFE DC current gain VCE =1 V; note 1; see Fig.2
IC=0.1 mA 60
IC=1mA 80
IC=10 mA 100 300
IC=50 mA 60
IC=100 mA 30
VCEsat collector-emitter saturation
voltage IC=10 mA; IB=1 mA; note 1 −−200 mV
IC=50 mA; IB=5 mA; note 1 −−200 mV
VBEsat base-emitter saturation voltage IC=10 mA; IB=1 mA; note 1 −−850 mV
IC=50 mA; IB=5 mA; note 1 −−950 mV
Cccollector capacitance VCB =5 V; IE=i
e= 0 A; f = 1 MHz 4.5 pF
Ceemitter capacitance IC=i
c= 0; VEB =500 mV; f = 1 MHz 10 pF
fTtransition frequency VCE =20 V; IC=10 mA; f = 100 MHz 250 MHz
F noise figure VCE =5 V; IC=100 µA; RS=1k;
f = 10 Hz to 15.7 kHz 4dB
Switching times (between 10 % and 90 % levels); see Fig.3
ton turn-on time ICon =10 mA; IBon =1 mA;
IBoff =1mA 65 ns
tddelay time 35 ns
trrise time 35 ns
toff turn-off time 300 ns
tsstorage time 225 ns
tffall time 75 ns
2004 Oct 11 4
Philips Semiconductors Product specification
PNP switching transistor 2N3906
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
80
160
hFE
40
120
MGD835
1021011IC (mA)
10 102103
VCE =1V.
RC
R2
R1
DUT
mgd624
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
VI
VCC
Vi=5 V; T = 500 µs; tp=10 µs; tr=t
f3 ns.
R1 = 56 ; R2 = 2.5 k; RB= 3.9 k; RC= 270 .
VBB = 1.9 V; VCC =3V.
Oscilloscope input impedance Zi=50.
Fig.3 Test circuit for switching times.
2004 Oct 11 5
Philips Semiconductors Product specification
PNP switching transistor 2N3906
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 97-02-28
04-06-28
A L
0 2.5 5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
2004 Oct 11 6
Philips Semiconductors Product specification
PNP switching transistor 2N3906
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13545