TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description * 650V @TJ = 150C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. * Typ. Rds(on)=0.15 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested * RoHS Compliant D G G D S TO-247 FCH Series TO-3PN FCA Series G DS S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed FCH20N60 (Note 1) VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) FCA20N60 Unit 600 V 20 12.5 A A 60 A 30 V 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds 4.5 V/ns 208 1.67 W W/C -55 to +150 C 300 C (TC = 25C) - Derate above 25C Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink RJA Thermal Resistance, Junction-to-Ambient (c)2008 Fairchild Semiconductor Corporation FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 1 Typ. Max. Unit -- 0.6 C/W 0.24 -- -- 41.7 C/W www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET December 2008 Device Marking Device Package Reel Size Tape Width Quantity FCH20N60 FCH20N60 TO-247 - - 30 FCA20N60 FCA20N60 TO-3PN - - 30 FCA20N60 FCA20N60_F109 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V ID = 250A, Referenced to 25C -- 0.6 -- V/C BVDSS / TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.15 0.19 -- 17 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz Coss eff. Effective Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2370 3080 pF -- 1280 1665 pF -- 95 -- pF -- 65 85 pF VDS = 0V to 400V, VGS = 0V -- 165 -- pF VDD = 300V, ID = 20A RG = 25 -- 62 135 ns -- 140 290 ns -- 230 470 ns -- 65 140 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 75 98 nC -- 13.5 18 nC -- 36 -- nC 20 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 20A dIF/dt =100A/s (Note 4) -- 530 -- ns -- 10.5 -- C NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 2 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 o 150 C 1 10 o 25 C o -55 C 0 10 * Note 1. VDS = 40V * Notes : 1. 250s Pulse Test o 2. 250s Pulse Test 2. TC = 25 C -1 0 10 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 IDR , Reverse Drain Current [A] RDS(ON) [], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 o 150 C 0 10 o 25 C * Notes : 1. VGS = 0V 2. 250s Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Crss = Cgd 7000 Capacitance [pF] 1.6 VDS = 100V Coss = Cds + Cgd 8000 Coss 6000 5000 * Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 3000 Crss 1000 0 -1 10 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 9000 2000 1.2 Figure 6. Gate Charge Characteristics 10000 4000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 20A 0 10 0 1 0 10 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 A Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 ID, Drain Current [A] ID, Drain Current [A] 100 us 1 ms 1 10 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 15 10 5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZJC(t), Thermal Response 10 0 D = 0 .5 10 * N o te s : 0 .2 -1 o 1 . Z JC (t) = 0 .6 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 0 .1 3 . T J M - T C = P D M * Z J C (t) 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 t2 -2 10 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 4 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 5 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 6 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 7 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 8 www.fairchildsemi.com FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4 10 www.fairchildsemi.com