SEMICONDUCTORS
SUMMARY
VR= 40V; IFAV = 650mA;
VF= 570mV typ @ 100mA; IR= 1µA typ @ 30V
DESCRIPTION
Packaged in the SOD523 package this addition to the Zetex Low Leakage
Schottky diode range offers an ideal low VF/IRperformance combined with a
low package height of 0.9mm making the device suitable for various
converter, charger, and LED driver circuits.
FEATURES
•Low VF
•380mA continuous current rating
•Low profile SOD523 package (0.9mm)
APPLICATIONS
•DC - DC converters
•Mobile telecomms
•Charger circuits
•LED driver circuits
•MOSFET voltage protection circuits
DEVICE MARKING
•53
ZLLS350
ISSUE 1 - MAY 2005
SOD523 40V LOW LEAKAGE SCHOTTKY BARRIER DIODE
1
SOD523
PINOUT
TOP VIEW
DEVICE REEL
SIZE
TAPE WIDTH QUANTITY PER
REEL
ZLLS350TA 7" 8mm
embossed
3,000 units
ZLLS350TC 13" 8mm
embossed
10,000 units
ORDERING INFORMATION
ZLLS350
SEMICONDUCTORS
ISSUE 1 - MAY 2005
2
PARAMETER SYMBOL LIMIT UNIT
Continuous reverse voltage VR40 V
Continuous forward current IF380 mA
Average peak forward current; D.C. = 50% IFAV 650 mA
Non repetitive forward current t < 100␮S
< 10mS
IFSM 6.0
1.3
A
A
Power dissipation at TA=25°C (a) PD357 mW
Power dissipation at TA=25°C (b) PD413 mW
Operating and storage temperature range Tstg -55 to +150 °C
Junction temperature Tj150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction to ambient(a) R␪JA 350 °C/W
Junction to ambient(b) R␪JA 303 °C/W
NOTES:
(a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
(b) As (a) above measured at t<5 secs.
THERMAL RESISTANCE
ZLLS350
SEMICONDUCTORS
ISSUE 1 - MAY 2005
3
CHARACTERISTICS
ZLLS350
SEMICONDUCTORS
ISSUE 1 - MAY 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Reverse breakdown voltage V(BR)R 40 63 V IR=100␮A
Forward voltage VF380
425
520
780
450
520
635
1000
mV
mV
mV
mV
IF=30mA*
IF=50mA*
IF=100mA*
IF=275mA*
Reverse current IR14␮AV
R=30V
Diode capacitance CD3.5 6 pF f=1MHz; VR=30V
Reverse recovery time trr 1 nS Switched from
IF=100mA, to IR=100mA
Measured at IR=10mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
ZLLS350
SEMICONDUCTORS
ISSUE 1 - MAY 2005
5
CHARACTERISTICS
ZLLS350
SEMICONDUCTORS
6
ISSUE 1 - MAY 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquaters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A – 0.800 – 0.0314 E 1.500 1.700 0.0590 0.0669
A1 0.000 0.100 0.000 0.0039 E1 1.100 1.300 0.0433 0.0511
A2 0.600 0.800 0.0236 0.0314 L 0.200 0.400 0.0078 0.0157
b1 0.160 0.300 0.0062 0.0118 L1 0.170 0.230 0.0066 0.0090
c 0.080 0.220 0.0031 0.0086 ⍜1⬚410 4⬚10⬚
D 0.700 0.900 0.0275 0.0354
PACKAGE DIMENSIONS