APT20GF120KR APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * Avalanche Rated * RBSOA and SCSOA Rated G C C E G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT20GF120KR VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K) 1200 VGE Gate-Emitter Voltage 20 I C1 Continuous Collector Current @ TC = 25C 32 I C2 Continuous Collector Current @ TC = 90C 20 1 UNIT Volts Amps 64 I CM Pulsed Collector Current I LM RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 125C 40 EAS Single Pulse Avalanche Energy 2 22 mJ PD Total Power Dissipation 200 Watts TJ,TSTG TL @ TC = 25C -55 to 150 Operating and Storage Junction Temperature Range C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVCES VGE(TH) VCE(ON) I CES I GES MIN TYP MAX 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) 2.7 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) 3.3 3.9 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage UNIT 1200 (VCE = VGE, I C = 350A, Tj = 25C) 4.5 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 0.8 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 5.0 Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 100 Volts mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 052-6205 Rev D 6-2002 Symbol APT20GF120KR DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge td(on) tr td(off) tf td(on) tr td(off) tf TYP MAX 1050 1210 100 150 f = 1 MHz 63 110 Gate Charge VGE = 15V 95 140 13 20 I C = I C2 62 90 Resistive Switching (25C) 15 30 VGE = 15V 67 130 92 140 93 190 17 34 30 60 105 160 71 140 Capacitance VGE = 0V VCE = 25V 3 Qg Turn-on Delay Time MIN VCC = 0.5VCES Rise Time VCC = 0.5VCES Turn-off Delay Time I C = I C2 Fall Time RG = 10 Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V Fall Time I C = I C2 Eon Turn-on Switching Energy R G = 10 1.3 3.0 Eoff Turn-off Switching Energy TJ = +150C 1.5 3.0 Ets Total Switching Losses 2.7 5.0 17 30 35 70 93 140 Fall Time R G = 10 70 140 Ets Total Switching Losses TJ = +25C 2.4 5.0 gfe Forward Transconductance VCE = 20V, I C = I C2 12 td(on) tr td(off) tf Turn-on Delay Time Rise Time Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES Turn-off Delay Time VGE = 15V I C = I C2 UNIT pF nC ns ns mJ ns mJ S THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC Junction to Case RJA Junction to Ambient WT Torque 052-6205 Rev D 6-2002 Characteristic MIN TYP MAX UNIT 0.63 C/W Package Weight 80 0.07 oz 1.9 gm 10 lb*in 1.1 N*m Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 IC = IC2, RGE = 25, L = 110H, Tj = 25C 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. APT20GF120KR 50 VGE=17 & 15V 13V 40 30 11V 20 10 9V IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 50 30 11V 20 10 9V 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 60 100 0 250Sec. Pulse Test VGE = 15V 40 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 13V 40 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 0 TC=-55C TC=+25C 30 TC=+150C 20 10 OPERATION LIMITED BY VCE (SAT) 50 100s 10 5 1ms TC =+25C TJ =+150C SINGLE PULSE 1 0 2,000 1,000 Cies 500 f = 1MHz Coes 100 Cres 50 10 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 10ms 1 5 10 50 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V C, CAPACITANCE (pF) VGE=17 & 15V 20 IC = IC2 TJ = +25C 16 VCE=240V 12 VCE=600V 8 4 0 0 40 80 120 160 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0.5 D=0.5 0.2 0.1 0.05 0.05 Note: 0.02 0.01 0.01 t2 0.005 SINGLE PULSE 0.001 -5 10 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6205 Rev D 6-2002 0.1 PDM ZJC, THERMAL IMPEDANCE (C/W) 1.0 APT20GF120KR 40 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 5.0 4.0 IC1 2.0 IC2 1.5 0.5 IC2 1.0 -50 10 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 1.2 25 5.0 SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 20 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2 4.0 Eoff 3.0 2.0 Eon 1.0 0 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 10 0 1.6 SWITCHING ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) 30 IC1 IC2 1 0.5 IC2 VCC = 0.66 VCES VGE = +15V RG = 10 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 1.2 Eoff 0.8 Eon 0.4 0 0 4 8 12 16 20 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current IC, COLLECTOR CURRENT (AMPERES) 052-6205 Rev D 6-2002 100 For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 56W ILOAD = IRMS of fundamental 10 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 APT20GF120KR VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off A A 90% VC B 10% B t d (on) t d(off) IC VC IC 100uH 90% D.U.T. VCE (SAT) tr VC A D.U.T. DRIVER* 10% IC RG V CLAMP 90% 10% tf E on t=2us E off Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) VGE(on) V CC 90% .5 VCES RL = I C2 2 D.U.T. 10% 1 From Gate Drive Circuitry VCE(on) VGE(off) t d (on) t d(off) tr RG 1 tf Figure 16, Resistive Switching Time Test Circuit and Waveforms TO-220AC Package Outline 1.39 (.055) 0.51 (.020) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) Collector 6.85 (.270) 5.85 (.230) 16.51 (.650) 14.23 (.560) 4.08 (.161) Dia. 3.54 (.139) 3.42 (.135) 2.54 (.100) 6.35 (.250) MAX. 14.73 (.580) 12.70 (.500) 0.50 (.020) 0.41 (.016) Gate Collector Emitter 1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) 4.82 (.190) 3.56 (.140) 1.77 (.070) 3-Plcs. 1.15 (.045) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 052-6205 Rev D 6-2002 2.92 (.115) 2.04 (.080)