Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Junction Rectifier
1N4001GP thru 1N4007GP
Vishay General Semiconductor
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for both
consumer and automotive applications.
FEATURES
Superectifier structure for high reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, typical IR less than 0.1 μA
High forward surge capability
Meets environmental standard MIL-S-19500
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1) JEDEC registered values
(2) For device using on bridge rectifier application
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM (8.3 ms sine-wave) 30 A
IFSM (square wave tp = 1 ms) 45 A
IR5.0 μA
VF1.1 V
TJ max. 175 °C
DO-204AL (DO-41)
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Maximum repetitive peak
reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS (1) 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC (1) 50 100 200 400 600 800 1000 V
Maximum average forward rectified
current 0.375" (9.5 mm) lead length
at TA = 75 °C
IF(AV) (1) 1.0 A
Non-repetitive peak
forward surge current
square waveform
TA = 25 °C (fig. 3)
tp = 1 ms
IFSM (1)
45
Atp = 2 ms 35
tp = 5 ms 30
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length TA = 75 °C
IR(AV) (1) 30 μA
Rating for fusing (t < 8.3 ms) I2t (2) 3.7 A2s
Operating junction and
storage temperature range TJ, TSTG (1) - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88504
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Note
(1) JEDEC registered values
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Maximum
instantaneous
forward voltage
1.0 A VF1.1 V
Maximum DC
reverse current
at rated DC
blocking voltage
TA = 25 °C
IR (1)
5.0
μA
TA = 125 °C 50
Typical reverse
recovery time
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr 2.0 μs
Typical junction
capacitance
4.0 V,
1 MHz CJ8.0 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Typical thermal resistance RJA (1) 55 °C/W
RJL (1) 25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N4004GP-E3/54 0.335 54 5500 13" diameter paper tape and reel
1N4004GP-E3/73 0.335 73 3000 Ammo pack packaging
1N4004GPHE3/54 (1) 0.335 54 5500 13" diameter paper tape and reel
1N4004GPHE3/73 (1) 0.335 73 3000 Ammo pack packaging
0
025 50 75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
Ambient Temperature (°C)
Average Forward Rectied Current (A)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
5
101 100
10
15
20
25
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Fig. 3 - Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
50 75 100
50
25 125
30
25
20
15
45
40
35
10
Ambient Temperature (°C)
Square Waveform
t
p
t
p
= 1 ms
t
p
= 5 ms
t
p
= 2 ms
Peak Forward Surge Current (A)
0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.1 101 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 101 100
0.1
10
100
1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88504
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4001GP thru 1N4007GP
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
• Lead diameter isfor sufx “E” part numbers
0.026 (0.66)
0.023 (0.58)
Note
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Revision: 12-Mar-12 1Document Number: 91000
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