VS-MUR820-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt(R) FEATURES Base cathode 2 2 * Ultrafast recovery time * Low forward voltage drop * 175 C operating junction temperature * Low leakage current 1 1 Cathode 3 3 Anode * Designed and qualified according to JEDEC(R)-JESD 47 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2L TO-220AC DESCRIPTION / APPLICATIONS VS-MUR820 is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. PRIMARY CHARACTERISTICS IF(AV) 8A VR 200 V VF at IF 0.895 V trr typ. See Recovery table TJ max. 175 C Package 2L TO-220AC Circuit configuration Single The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) Non-repetitive peak surge current IFSM Peak repetitive forward current IFM Operating junction and storage temperatures TEST CONDITIONS Total device, rated VR, TC = 150 C MAX. UNITS 200 V 8 A 100 Rated VR, square wave, 20 kHz, TC = 150 C 16 TJ, TStg -65 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 8 A - - 0.975 0.895 IR = 100 A IF = 8 A, TJ = 150 C - - VR = VR rated - - 5 TJ = 150 C, VR = VR rated - - 250 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 25 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH A Revision: 23-Nov-17 Document Number: 96186 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR820-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/s, VR = 30 V - - 35 IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25 TJ = 25 C - 20 - - 34 - - 1.7 - - 4.2 - TJ = 125 C Peak recovery current TJ = 25 C IRRM TJ = 125 C IF = 8 A dIF/dt = 200 A/s VR = 160 V UNITS ns A TJ = 25 C - 23 - TJ = 125 C - 75 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 C Thermal resistance, junction to case RthJC - - 3.0 Thermal resistance, junction to ambient RthJA - - 50 Thermal resistance, case to heatsink RthCS - 0.5 - Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Mounting surface, flat, smooth, and greased Weight Mounting torque - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf * cm (lbf * in) Case style 2L TO-220AC MUR820 100 100 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) Marking device C/W 10 TJ = 175 C TJ = 150 C TJ = 25 C 1 TJ = 175 C 10 TJ = 150 C TJ = 125 C 1 TJ = 100 C 0.1 0.01 TJ = 25 C 0.001 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 50 100 150 200 250 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 23-Nov-17 Document Number: 96186 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR820-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 C 10 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 . 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 10 Average Power Loss (W) Allowable Case Temperature (C) 180 170 160 DC Square wave (D = 0.50) Rated VR applied 150 140 8 RMS limit 6 4 2 DC See note (1) 130 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 0 0 3 6 9 12 0 3 6 9 12 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 23-Nov-17 Document Number: 96186 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR820-M3 www.vishay.com Vishay Semiconductors 200 50 IF = 16 A IF = 8 A IF = 4 A 30 Qrr (nC) trr (ns) 40 VR = 160 V TJ = 125 C TJ = 25 C 20 160 VR = 160 V TJ = 125 C TJ = 25 C 120 IF = 16 A IF = 8 A IF = 4 A 80 40 10 100 0 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 23-Nov-17 Document Number: 96186 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR820-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MUR 1 2 8 20 -M3 3 4 5 1 - Vishay Semiconductors product 2 - Ultrafast MUR series 3 - Current rating (8 = 8 A) 4 - Voltage rating (20 = 200 V) 5 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-MUR820-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 23-Nov-17 Document Number: 96186 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A OP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC(R) outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 OP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC(R) TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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