VS-MUR820-M3
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Revision: 23-Nov-17 1Document Number: 96186
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Ultrafast Rectifier, 8 A FRED Pt®
FEATURES
Ultrafast recovery time
Low forward voltage drop
175 °C operating junction temperature
Low leakage current
Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-MUR820 is the state of the art ultrafast recovery rectifier
specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV) 8 A
VR200 V
VF at IF0.895 V
trr typ. See Recovery table
TJ max. 175 °C
Package 2L TO-220AC
Circuit configuration Single
Anode
13
Cathode
Base
cathode
2
2L TO-220AC
1
2
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current IF(AV) Total device, rated VR, TC = 150 °C 8
ANon-repetitive peak surge current IFSM 100
Peak repetitive forward current IFM Rated VR, square wave, 20 kHz, TC = 150 °C 16
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 200 - -
V
Forward voltage VF
IF = 8 A - - 0.975
IF = 8 A, TJ = 150 °C - - 0.895
Reverse leakage current IR
VR = VR rated - - 5 μA
TJ = 150 °C, VR = VR rated - - 250
Junction capacitance CTVR = 200 V - 25 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
VS-MUR820-M3
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Revision: 23-Nov-17 2Document Number: 96186
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
ns
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25
TJ = 25 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 160 V
-20-
TJ = 125 °C - 34 -
Peak recovery current IRRM
TJ = 25 °C - 1.7 - A
TJ = 125 °C - 4.2 -
Reverse recovery charge Qrr
TJ = 25 °C - 23 - nC
TJ = 125 °C - 75 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range TJ, TStg -65 - 175 °C
Thermal resistance,
junction to case RthJC --3.0
°C/W
Thermal resistance,
junction to ambient RthJA --50
Thermal resistance,
case to heatsink RthCS
Mounting surface, flat, smooth, and
greased -0.5-
Weight -2.0- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220AC MUR820
1
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
01.80.4 0.8
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.2
0.1
0.2 0.6 1.0 1.4 1.6
0.01
0.1
1
10
100
0 100 150
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
200 25050
0.001
VS-MUR820-M3
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Revision: 23-Nov-17 3Document Number: 96186
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
1000
1 10 100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
03
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
69
Square wave (D = 0.50)
Rated VR applied
12
06
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
2
4
10
6
8
RMS limit
12
VS-MUR820-M3
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Revision: 23-Nov-17 4Document Number: 96186
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Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Fig. 9 - Reverse Recovery Waveform and Definitions
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
40
VR = 160 V
TJ = 125 °C
TJ = 25 °C
30
50
10
IF = 16 A
IF = 8 A
IF = 4 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
40
IF = 16 A
IF = 8 A
IF = 4 A
200
120
VR = 160 V
TJ = 125 °C
TJ = 25 °C
80
160
0
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-MUR820-M3
www.vishay.com Vishay Semiconductors
Revision: 23-Nov-17 5Document Number: 96186
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MUR820-M3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96156
Part marking information www.vishay.com/doc?95391
2- Ultrafast MUR series
3- Current rating (8 = 8 A)
- Voltage rating (20 = 200 V)
4
1-Vishay Semiconductors product
5
Device code
51 32 4
VS- MUR 8 20 -M3
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
- Environmental digit:
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 13-Jun-2019 1Document Number: 96156
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2L TO-220AC
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 D2 11.68 13.30 0.460 0.524 6, 7
A1 1.14 1.40 0.045 0.055 E 10.11 10.51 0.398 0.414 3, 6
A2 2.50 2.92 0.098 0.115 E1 6.86 8.89 0.270 0.350 6
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.91 0.139 0.154
D 14.85 15.35 0.585 0.604 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355
12
C
C
DD
2 x b22 x b
(b, b2)
b1, b3
0.014 AB
MM
0.015 AB
M M
Conforms to JEDEC® outline TO-220AC
(6)
(6)
(6)
L1 (2)
Detail B
Section C - C and D - D
Base metal Plating
(4)
(4)
c1
c
(6)
(6)
Ø P
E
Q
D
L
c
D1
e
e1
2 x
A
B
A
A
A
C
A2
A1
Thermal pad
H1
(E)
(H1)
D2
Detail B
E1
View A - A
Lead tip
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