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EMIF02-MIC03F1
®
January 2004 - Ed: 3A
IEC61000-4-2
Level 4 on input pins 15kV (air discharge)
8 kV (contact discharge)
Level 1 on output pins 2kV (air discharge)
2kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
COMPLIES WITH THE FOLLOWING STANDARDS:
Flip Chip package
B
132
C
A
I1
O1
GND
I2
O2
PIN CONFIGURATION (ball side)
■EMI symmetrical (I/O) low-pass filter
■High efficiency in EMI filtering
■Very low PCB space consuming: 1.07mm x 1.47mm
■Very thin package: 0.65 mm
■High efficiency in ESD suppression
■High reliability offered by monolithic integration
■High reducing of parasitic elements through integration
& wafer level packaging.
BENEFITS
2 LINES EMI FILTER
AND ESD PROTECTION
IPADTM
Where EMI filtering in ESD sensitive equipment is
required :
■Mobile phones and communication systems
■Computers, printers and MCU Boards
MAIN PRODUCT CHARACTERISTICS:
The EMIF02-MIC03 is a highly integrated device designed
to suppress EMI/RFI noise in all systems subjected to
electromagnetic interferences. The EMIF02 flip chip
packaging means the package size is equal to the die
size.
This filter includes an ESD protection circuitry which
prevents the device from destruction when subjected to
ESD surges up 15kV.
DESCRIPTION
TM : IPAD is a trademark of STMicroelectronics.
Input Output
GND GND GND
Low-pass Filter
Ri/o = 68
Cline = 100pF
Ω
BASIC CELL CONFIGURATION
EMIF02-MIC03F1
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Symbol Parameter and test conditions Value Unit
TjMaximum junction temperature 125 °C
Top Operating temperature range -40 to + 85 °C
Tstg Storage temperature range -55 to 150 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
VBR Breakdown voltage
IRM Leakage current @ VRM
VRM Stand-off voltage
VCL Clamping voltage
RdDynamic impedance
IPP Peak pulse current
RI/O Series resistance between Input & Output
Cline Input capacitance per line
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
I
V
IPP
VCL
VBRVRM
IR
IRM
IRM
IR
IPP
VRMVBR
VCL
Symbol Test conditions Min. Typ. Max. Unit
VBR IR=1mA 68 V
IRM VRM = 3V per line 500 nA
RI/O Tolerance ± 20% 68 Ω
Cline VR=0V 100 pF
100.0k 1.0M 10.0M 100.0M 1.0G
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
dB
f/Hz
100.0k 1.0M 10.0M 100.0M 1.0G
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
dB
f/Hz
Fig. 1: S21(dB) attenuation measurement and
Aplac simulation.
100.0k 1.0M 10.0M 100.0M 1.0G
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
dB
f/Hz
100.0k 1.0M 10.0M 100.0M 1.0G
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
dB
f/Hz
Fig. 2: Analog crosstalk measurements.
EMIF02-MIC03F1
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Fig. 3: ESD response to IEC61000-4-2 (+15kV air
discharge) on one input V(in) and on one output
(Vout).
Fig. 4: ESD response to IEC61000-4-2 (-15kV air
discharge) on one input V(in) and on one output
(Vout).
0
20
40
60
80
100
120
140
012345
V(V)R
F=1MHz
Vosc=30mVRMS
Tj=25°C
C(pF)
Fig. 5: Line capacitance versus applied voltage.
EMIF02-MIC03F1
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model = D1 model = D2
model = D2
IN1
model = D1
OUT1
Rbump Lbump Lbump Rbump
Rmic Lmic
Rbump Lbump Lbump RbumpRmic Lmic
model = D3
IN2 OUT2
GND
Lsub
Rsub
Rbump
Lbump
Lgnd
Rgnd
Cgnd
GND
EMIF02-MIC03F1 model Ground return
Aplac model.
aplacvar Rmic 68
aplacvar Lmic 10p
aplacvar Cdiode1 100pF
aplacvar Cdiode2 3.6pF
aplacvar Cdiode3 1.17nF
aplacvar Lbump 50pH
aplacvar Rbump 20m
aplacvar Rsub 0.5m
aplacvar Rgnd 10m
aplacvar Lgnd 50pH
aplacvar Cgnd 0.15pF
aplacvar Lsub 10pH
Model D1
CJO=Cdiode1
BV=7
IBV=1u
IKF=1000
IS=10f
ISR=100p
N=1
M=0.3333
RS=0.7
VJ=0.6
TT=50n
Model D2
CJO=Cdiode2
BV=7
IBV=1u
IKF=1000
IS=10f
ISR=100p
N=1
M=0.3333
RS=0.3
VJ=0.6
TT=50n
Model D3
CJO=Cdiode3
BV=7
IBV=1u
IKF=1000
IS=10f
ISR=100p
N=1
M=0.3333
RS=0.12
VJ=0.6
TT=50n
Aplac parameters.
EMIF yy F x- xxx zz
EMI Filter
Number of lines
x: resistance value (Ohms) z: capacitance value / 10(pF)
or
Application (3 letters) and Version (2 digits)
Flip Chip
1: Pitch = 500µm
Bump = 315µm
2: Leadfree Pitch = 500µm
Bump = 315µm
ORDER CODE
EMIF02-MIC03F1
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1.07mm ± 50µm
1.47mm ± 50µm
500µm ± 15
315µm ± 50
500µm ± 10
250µm ± 10
650µm ± 50
PACKAGE MECHANICAL DATA
FLIP CHIP
365
365
240
40
220
x
y
x
w
x
w
Dot, ST logo
xxx = marking
yww = datecode
(y = year
ww = week)
All dimensions in µm
MARKING
Copper pad Diameter :
250µm recommended , 300µm max
Solder stencil opening : 330µm
Solder mask opening recommendation :
340µm min for 300µm copper pad diameter
FOOT PRINT RECOMMENDATIONS
EMIF02-MIC03F1
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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Sweden - Switzerland - United Kingdom - United States
www.st.com
Dot identifying Pin A1 location
User direction of unreeling
All dimensions in mm
4 +/- 0.1
8 +/- 0.3
4 +/- 0.1
1.75 +/- 0.1 3.5 +/- 0.1
Ø 1.5 +/- 0.1
0.73 +/- 0.05
xxx
yww
ST
xxx
yww
ST
xxx
yww
ST
PACKING
Ordering code Marking Package Weight Base qty Delivery mode
EMIF02-MIC03F1 FWT Flip Chip 2.1 mg 5000 Tape & reel (7”)
OTHER INFORMATION
Note: More packing informations are available in the application notes
AN1235: ''Flip-Chip: Package description and recommandations for use''
AN1751: "EMI Filters: Recommendations and measurements"
