This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 Package M Di ain sc te on na tin nc ue e/ d Features Code TO-92B-B1 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V 0.5 A 1 A 625 mW 150 C -55 to +150 C Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Electrical Characteristics Ta = 25C3C Parameter Pin Name 1. Emitter 2. Collector 3. Base d p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. Low collector-emitter saturation voltage VCE(sat) Complementary pair with 2SA0720 Symbol Conditions Min Typ Max Unit VCBO IC = 10 mA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 50 V VEBO IE = 10 mA, IC = 0 7 V ICBO VCB = 20 V, IE = 0 hFE1 * VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 V fT VCB = 10 V, IE = -50 mA, f = 200 MHz 200 Cre VCB = 10 V, IE = 0, f = 1 MHz on tin Emitter-base voltage (Collector open) ue Collector-base voltage (Emitter open) nc e Forward current transfer ratio /D isc Collector-base cutoff current (Emitter open) te na Collector-emitter saturation voltage Base-emitter saturation voltage M ain Transition frequency 340 6 mA MHz 15 pF Pl Collector output capacitance (Common base, input open circuited) 0.1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date : October 2008 SJC00420AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1318 PC Ta IC VCE 0.8 Ta = 25C 0.7 0.4 3 mA 0.3 2 mA 0.6 0.5 0.4 0.3 M Di ain sc te on na tin nc ue e/ d 400 0.5 VCE = 10 V Ta = 25C 0.7 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.6 Collector current IC (A) 600 IC IB 0.8 Collector current IC (A) 800 Collector power dissipation PC (mW) 2SC1318_IC-IB 2SC1318_IC-VCE 2SC1318_PC-Ta 200 120 160 2SC1318_VCE(sat)-IC 0.1 10 Ta = 75C 25C -25C 0.1 0.01 0.01 0.1 1 10 /D isc 240 VCB = 10 V Ta = 25C 120 te na M ain 160 nc e 200 80 40 0 -1 -10 Emitter current IE (mA) 16 0 20 0 -100 2 4 6 8 Base current IB (mA) 2SC1318_VBE(sat)-IC 2SC1318_hFE-IC 100 IC / IB = 10 250 25C Ta = 75C VCE = 10 V Ta = 75C 200 1 10 hFE IC 300 10 150 25C -25C -25C 100 0.1 50 0.01 0.01 on tin fT IE 12 Collector-emitter voltage VCE (V) ue Collector current IC (A) 2SC1318_fT-IE 8 VBE(sat) IC IC / IB = 10 1 4 FE 100 0 0.1 1 0 0.01 10 2SC1318_Cob-VCB 2SC1318_VCER-RBE 12 10 80 6 60 4 40 2 20 10 100 Collector-base voltage VCB (V) SJC00420AED IC = 2 mA Ta = 25C 100 8 0 1 10 VCER RBE 120 IE = 0 f = 1 MHz Ta = 25C 1 1 Collector current IC (A) Cob VCB 0 0.1 Collector current IC (A) CER Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0 Base-emitter saturation voltage VBE(sat) (V) 80 0.2 d Pl p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro a n t t Collector-emitter voltage V dhu y y (V) Forward current transfer ratio b . p o pe p (Resistor between B and E) ct ed an ut life as la on tes cy cle ic. t i co nfo sta .jp rm ge /e a n/ tio . n. 40 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 Ambient temperature Ta (C) Transition frequency fT (MHz) 1 mA 0.1 0 2 0.2 10 100 1000 Base-emitter resistance RBE (k) ue 103 102 10 Collector current IC (A) 104 40 80 120 160 200 Ambient temperature Ta (C) 0.001 0.1 Collector-emitter voltage VCE (V) d Pl p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. on tin /D isc nc e 0 te na 1 M ain ICEO (Ta) ICEO (Ta = 25C) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1318 2SC1317_ICEO-Ta ICEO Ta Safe operation area 2SC1318_ASO VCE = 10 V 10 Single pulse Ta = 25C 1 ICP IC 0.1 1 SJC00420AED t = 10 ms t=1s DC 0.01 10 100 3 +0.15 4 ue 0.45 -0.1 on tin /D isc nc e te na 0.5 0.2 0.7 0.1 2.5 -0.2 +0.6 1 0.2 0.2 d p l ea an incl se ed ud p lan m m es ht visi 0.7 tp t f ed ain ain foll 2.3 :/ /w ollo dis di ten ten ow12.9 5.1 ww w co sc an an ing .se ing nti onti ce ce fo m UR nue nue typ typ ur P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. Pl M ain M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1318 TO-92-B1 Unit: mm 5.0 0.2 2 4.0 0.2 0.45 -0.1 +0.15 2.5 -0.2 +0.6 3 SJC00420AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl M ain te na nc e /D isc on tin ue 20080805