Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.6, 04-Mar-11 3
ILD615, ILQ615
Optocoupler, Phototransistor Output
(Dual, Quad Channel) Vishay Semiconductors
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (1) 2 mm distance from case bottom Tsld 260 °C
Package power dissipation ILD615 400 mW
Derate linearly from 25 °C 5.33 mW/°C
Package power dissipation ILQ615 500 mW
Derate linearly from 25 °C 6.67 mW/°C
Isolation test voltage t = 1 s VISO 5300 VRMS
Isolation voltage VIORM 890 VP
Total power dissipation Ptot 250 mW
Creepage distance 7mm
Clearance distance 7mm
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1 1.15 1.3 V
Breakdown voltage IR = 10 μA VBR 630 V
Reverse current VR = 6 V IR0.01 10 μA
Capacitance VR = 0 V, f = 1 MHz CO25 pF
Thermal resistance, junction to lead RTHJL 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF
Collector emitter leakage current, -1, -2 VCE = 10 V ICEO 250nA
Collector emitter leakage current, -3, -4 VCE = 10 V ICEO 5 100 nA
Collector emitter breakdown voltage ICE = 0.5 mA BVCEO 70 V
Emitter collector breakdown voltage IE = 0.1 mA BVECO 7V
Thermal resistance, junction to lead RTHJL 500 K/W
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match IF = 10 mA, VCE = 5 V CTRX/CTRY 1 to 1 2 to 1
COUPLER
Capacitance (input to output) VIO = 0 V, f = 1 MHz CIO 0.8 pF
Insulation resistance VIO = 500 V, TA = 25 °C RS1012 1014
Channel to channel isolation 500 VAC
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT