R07DS0656EJ0300 Rev.3.00 Page 1 of 6
Feb 01, 2012
Preliminary Datasheet
RJK03E0DNS
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High densit y mounting
Low on-resistance
RDS(on) = 4.3 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
G
D
SSS
DDD
4
123
5678
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
8
7
6
5
21
3
4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 30 A
Drain peak current ID(pulse)Note1 120 A
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAP Note 2 13 A
Avalanche energy EAR Note 2 16.9 mJ
Channel dissipation Pch Note3 20 W
Channel to case thermal impedanc e ch-c Note3 6.25 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Valu e at Tch = 25C, Rg 50
3. Tc = 25C
R07DS0656EJ0300
(Previous: REJ03G1902-0200)
Rev.3.00
Feb 01, 2012
RJK03E0DNS Preliminary
R07DS0656EJ0300 Rev.3.00 Page 2 of 6
Feb 01, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 A VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 A VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA
RDS(on) — 4.3 5.6 m I
D = 15 A, VGS = 10 V Note4
Static drain to source on state
resistance RDS(on) — 5.6 7.8 m I
D = 15 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 60 — S ID = 15 A, VDS = 5 V Note4
Input capacitance Ciss — 2180 3050 pF
Output capacitance Coss — 300 — pF
Reverse transfer capacitance Crss — 175 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Gate Resistance Rg — 0.7 1.9
Total gate charge Qg — 15.2 — nC
Gate to source charge Qgs — 6.8 — nC
Gate to drain charge Qgd — 4.0 — nC
VDD = 10 V
VGS = 4.5 V
ID = 30 A
Turn-on delay time td(on) — 13.6 — ns
Rise time tr — 5.1 — ns
Turn-off delay time td(off) — 44 — ns
Fall time tf — 7 — ns
VGS = 10 V, ID = 15 A
VDD 10 V
RL = 0.67
Rg = 4.7
Body–drain diode forward voltage VDF — 0.84 1.10 V IF = 30 A, VGS = 0 Note4
Body–drain diode reverse recovery
time trr — 18 — ns
IF =30 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
RJK03E0DNS Preliminary
R07DS0656EJ0300 Rev.3.00 Page 3 of 6
Feb 01, 2012
Main Characteristics
50
40
30
20
10
0246810
50
40
30
20
10
012345
10
3
130 3001 10 100 1000
3
200
150
100
50
04 8 12 16 20
5A
100
30
10 V
3.0 V
3.2 V
10 V
4.5 V
2A
40
30
20
10
050 100 150 200 0.1 1 10 100
10
100
1000
1
0.1
PW = 10 ms
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current ID (A)
Maximum Safe Operation Area
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by R
DS(on)
1 ms
DC Operation
V
DS
= 5 V
Pulse Test
Tc = 75°C 25°C
–25°C
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS
(V)
Drain Current ID (A)
Typical Output Characteristics
Drain Current ID (A)
Typical Transfer Characteristics
V
GS
= 2.6 V
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test Pulse Test
V
GS
= 4.5 V
I
D
= 10 A
2.8 V
RJK03E0DNS Preliminary
R07DS0656EJ0300 Rev.3.00 Page 4 of 6
Feb 01, 2012
20
16
12
8
4
–25 0 25 50 75 100 125 150
0
10 V
20
16
12
8
4
25 50 75 100 125 150
0
50
40
30
20
10
0
0.4 0.8 1.2 1.6 2.0
010 3020
10000
3000
1000
300
100
30
10
Crss
Coss
Ciss
50
40
30
20
10
0
20
16
12
8
4
10 20 30 40 5000
5 V
10 V
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
I
D
= 2 A, 5 A, 10 A
2 A, 5 A, 10 A
V
GS
= 4.5 V
Pulse Test
V
GS
= 0
f = 1 MHz
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
I
D
= 30 A
V
GS
V
DS
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
Pulse Test
V
GS
= 0, –5 V
Channel Temperature Tch (°C)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
RJK03E0DNS Preliminary
R07DS0656EJ0300 Rev.3.00 Page 5 of 6
Feb 01, 2012
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
Vin
15 V
0
I
D
VDS
IAP
V(BR)DSS
L
VDD
EAR = L • IAP2 •
2
1VDSS
VDSS – VDD
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 10 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor 90%
10%
tf
Rg
3
1
0.3
0.1
0.03
0.01 1 m 10 m 100 m 1 10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
DM
P
PW
T
D = PW
T
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Avalanche Test Circuit Avalanche Waveform
Switching Time Test Circuit Switching Time Waveform
RJK03E0DNS Preliminary
R07DS0656EJ0300 Rev.3.00 Page 6 of 6
Feb 01, 2012
Package Dimensions
0.04Max
0Min
3.1 ± 0.1
Stand-off
3.3 ± 0.1 2.27 ± 0.2
0.32 ± 0.08
(2.55)
0.8 Max
0.575 Typ 0.65 Typ 0.22 Typ
3.3 ± 0.1
2.9 ± 0.1
1.55 ± 0.2
0.1 Min
0.4 +0.15
−0.1 0.4 +0.15
−0.1
P-HWSON8-2.9x3.1-0.65 0.022g
MASS[Typ.]
⎯
PWSN0008JB-A
RENESAS CodeJEITA Package Code Previous Code
Package Name
HWSON-8
Ordering Information
Orderable Part Number Quantity Shipping Container
RJK03E0DNS-00-J5 5000 pcs Taping
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