RF2317 LINEAR CATV AMPLIFIER Package Style: CJ2BAT0 NC 1 Features DC to 3.0GHz Operation Internally Matched Input and Output 15dB Small Signal Gain 4.8dB Noise Figure at 900MHz 38dBm Output IP3 at 900MHz Single 9V to 12V Power Supply GND 2 15 GND GND 3 14 GND RF IN 4 CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks Laser Diode Driver Return Channel Amplifier Base Stations 13 RF OUT NC 5 12 NC GND 6 11 GND GND 7 10 GND NC 8 Apllications 16 NC 9 NC Functional Block Diagram Product Description The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an advanced gallium arsenide heterojunction bipolar transistor (HBT) process, and has been designed for use as an easily cascadable 75 gain block. The gain flatness of better than 0.5dB from 50MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3GHz. The device is self-contained with 75 input and output impedances and requires only two external DC biasing elements to operate as specified. Ordering Information RF2317 RF2317SR RF2317TR7 RF2317TR13 RF2317 50 RF2317 75 GaAs HBT GaAs MESFET InGaP HBT Sample bag with 25 pieces 7" Sample reel with 100 pieces 7" Reel with 750 pieces 13" Reel with 2500 pieces 1000MHz PCBA with 5-piece sample bag 1000MHz PCBA with 5-piece sample bag Optimum Technology Matching(R) Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2012, RF Micro Devices, Inc. DS120511 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 11 RF2317 Absolute Maximum Ratings Parameter Rating Unit 250 mA Input RF Power +18 dBm Output Load VSWR 20:1 Device Current Ambient Operating Temperature -40 to +85 C Storage Temperature -40 to +150 C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Parameter Min. Specification Typ. Max. Unit Condition T = +25C , ICC = 180mA, RC = 10.2, 50 System Overall (50) Frequency Range DC Gain 13.5 14.3 Noise Figure 4.9 Input VSWR 1.7:1 Output VSWR 2.3:1 Output IP3 +37 Output IP2 Output P1dB 3000 MHz 15.0 dB dB 3dB Bandwidth From 100MHz to 1000MHz Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. +47 dBm At 100MHz +42 dBm At 500MHz +37 dBm At 900MHz +55 dBm F1 = 400MHz, F2 = 500MHz, FOUT = 100MHz +25.5 dBm At 100MHz +24 dBm At 500MHz At 900MHz +22 dBm 19.5 dB ThetaJC 55 C/W Maximum Junction Temperature 150 C Mean Time To Failures 3100 years TAMB = +85C 58 C/W ICC = 180mA, PDISS = 1.5W, TAMB = 85C Reverse Isolation Thermal ThetaJC Maximum Junction Temperature 175 C Mean Time To Failures 380 years ICC = 150mA, PDISS = 1.2W, TAMB = 85C TAMB = +85C Power Supply (50) Device Voltage Operating Current Range 100 8.5 V On pin 13, ICC = 150mA 9.3 V On pin 13, ICC = 180mA 180 200 mA Overall (75) Frequency Range DC 3000 MHz Gain 15.0 dB Noise Figure 4.8 dB 2 of 11 Actual current determined by VCC and RC T = 25C, ICC = 180mA, RC = 14.3, 75 System 3dB Bandwidth From 100MHz to 1000MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120511 RF2317 Parameter Min. Specification Typ. Max. Unit T = 25C, ICC = 180mA, RC = 14.3, 75 System Overall (75) (continued) Input VSWR 1.3:1 Output VSWR 1.8:1 Output IP3 +37 Output IP2 Output P1dB Reverse Isolation Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. +49 dBm At 100MHz +43 dBm At 500MHz +38 dBm At 900MHz +58 dBm F1 = 400MHz, F2 = 500MHz, FOUT = 100MHz +22 dBm At 100MHz +22 dBm At 500MHz +21 dBm At 900MHz 19 dB 10dBmV per channel, flat, at the input of the amplifier; ICC = 150mA, VCC = 10.4V 133 Channels XMOD CTB CSO + 1.25MHz CSO - 1.25MHz <-75 dBc At 55.25MHz <-75 dBc At 331.25MHz <-75 dBc At 547.25MHz <-75 dBc At 853.25MHz At 55.25MHz -85 dBc -85 dBc At 331.25MHz -84 dBc At 547.25MHz -83 dBc At 853.25MHz -90 dBc At 55.25MHz -72 dBc At 331.25MHz -69 dBc At 853.25MHz -64 dBc At 547.25MHz -63 dBc At 55.25MHz -65 dBc At 331.25MHz -70 dBc At 547.25MHz -90 dBc CTB CSO + 1.25MHz DS120511 At 853.25MHz 10dBmV per channel, flat, at the input of the amplifier; ICC = 180mA, VCC = 11.4V 133 Channels XMOD Condition <-75 dBc At 55.25MHz <-75 dBc At 331.25MHz <-75 dBc At 547.25MHz <-75 dBc At 853.25MHz -89 dBc At 55.25MHz -86 dBc At 331.25MHz -86 dBc At 547.25MHz -84 dBc At 853.25MHz -89 dBc At 55.25MHz At 331.25MHz -74 dBc -69 dBc At 853.25MHz -62 dBc At 547.25MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 11 RF2317 CSO - 1.25MHz -63 dBc At 55.25MHz -65 dBc At 331.25MHz -71 dBc At 547.25MHz -91 dBc At 853.25MHz Power Supply (75) Device Voltage Operating Current Range 4 of 11 100 8.3 V On pin 13, ICC = 150mA 8.9 V On pin 13, ICC = 180mA 180 200 mA Actual current determined by VCC and RC 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120511 RF2317 Pin Names and Descriptions Pin 1 2 Name NC GND 3 4 GND RF IN 5 6 7 8 9 10 11 12 13 NC GND GND NC NC GND GND NC RF OUT 14 15 16 GND GND NC Description Interface Schematic This pin is internally not connected. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Each ground pin should have a via to the ground plane. Same as pin 2. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. This pin is internally not connected. Same as pin 2. Same as pin 2. This pin is internally not connected. This pin is internally not connected. Same as pin 2. Same as pin 2. This pin is internally not connected. RF output and bias pin. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. For biasing, an RF choke in series with a resistor is needed. The DC voltage on this pin is typically 8.3V with a current of 150mA (for 75 board). See device voltage versus device current plot. In lower power applications the value of RC can be increased to lower the current and VD on this pin. RF OUT RF IN Same as pin 2. Same as pin 2. This pin is internally not connected. Package Drawing -A- 0.020 REF 0.157 0.150 0.020 0.014 0.008 0.004 0.393 0.386 0.034 REF 0.068 0.064 0.068 0.053 0.244 0.229 8 MAX 0 MIN 0.034 0.016 DS120511 0.009 0.007 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 5 of 11 RF2317 Application Schematic 5MHz to 50MHz Reverse Path VCC 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 3.9 H 18 nF RF IN 10 nF 11 18 nF RF OUT NOTES: Gain Flatness <0.5 dB Input and Output Return Loss >20 dB in 75 system Evaluation Board Schematic - 50 (Download Bill of Materials from www.rfmd.com.) P1 P1-1 J1 RF IN 1 VCC 2 GND 3 NC 50 strip 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 RC = 10.2 VCC C1 1 nF R1 51 R2 51 L1 3.3 H R3 51 R4 51 R5 51 50 strip C2 1 nF C3 220 pF C4 100 nF C5 1 F J2 RF OUT 2317400 Rev - 6 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120511 RF2317 Evaluation Board Schematic - 75 VCC C3 0.1 uF P1 P1-1 1 VCC 2 GND 3 J1 RF IN 1 NC 75 strip C1 1 nF RC = 14.3 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 R4 56 R1 56 R2 56 L1 1000 nH C2 1 nF R3 56 75 strip J2 RF OUT 2317401 Rev - DS120511 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 7 of 11 RF2317 Evaluation Board Layout - 50 2.0" x 2.0" Board Thickness 0.031", Board Material FR-4 Evaluation Board Layout - 75 1.40" x 1.40" Board Thickness 0.062", Board Material FR-4 8 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120511 RF2317 75, ICC = ICC 180mA, Temp = +25C 75 Ohms 180mA Temp 25C 0. 4 4.0 5.0 1.0 0.8 2.0 3.0 4.0 5.0 0.2 0.2 10.0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 3.0 4.0 5.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 -10.0 -10.0 .4 .0 -2 S[2,2] -1.0 .0 -2 -1.0 -0.8 -0. 6 Swp Min 0.05GHz -0 -0.8 -3 .0 S[2,2] S[1,1] -0. 6 -4. 0 -5.0 .4 -0 -0.2 -3 .0 S[1,1] -4. 0 -5.0 0 0.6 0 3. -0.2 DS120511 Swp Max 2GHz 2. 0 0.8 1.0 Swp Max 2GHz 0. 4 0 .6 75, ICC =ICC 150mA, Temp = +25C 75 Ohms 150mA Temp 25C 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Swp Min 0.05GHz 9 of 11 RF2317 CSO (L) versus Channel Frequency Across Temperature CSO (U) versus Channel Frequency Across Temperature (133 Channels, ICC = 180 mA) 100.00 (133 Channels, ICC = 180 mA) 100.00 90.00 90.00 80.00 70.00 CSO (dBc) CSO (dBc) 80.00 70.00 60.00 60.00 50.00 40.00 30.00 50.00 40.00 -40C 20.00 -40C +25C +25C 10.00 +85C +85C 30.00 55.25 0.00 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25 Channel Frequency (MHz) 55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25 Channel Frequency (MHz) CTB versus Channel Frequency Across Temperature (133 Channels, ICC = 180 mA) 91.00 -40C 90.00 +25C +85C 89.00 CTB (dBc) 88.00 87.00 86.00 85.00 84.00 83.00 82.00 81.00 55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25 Channel Frequency (MHz) 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120511 RF2317 Gain versus Frequency 75 , ICC = 180 mA 7.0 16.0 6.0 15.0 5.0 Noise Figure (dB) Gain (dB) Noise Figure versus Frequency Over Temperature 75, ICC=180mA 17.0 14.0 13.0 12.0 4.0 3.0 2.0 -40C 11.0 -40C 1.0 +25C +25C +85C +85C 10.0 0.0 100.0 200.0 300.0 400.0 500.0 600.0 700.0 800.0 900.0 1000.0 100.0 200.0 300.0 400.0 Frequency (MHz) Device Voltage versus Current 600.0 700.0 800.0 900.0 1000.0 CSO (L) versus Channel Frequency Across Temperature 75 10.0 500.0 Frequency (MHz) (133 Channels, ICC = 150 mA) 100.00 90.00 9.0 8.0 CSO (dBc) Device Voltage (V) 80.00 7.0 70.00 60.00 50.00 6.0 -40C 40.00 +25C +85C 5.0 30.00 0.0 25.0 50.0 75.0 100.0 125.0 150.0 175.0 55.25 200.0 155.25 Current (mA) 355.25 455.25 555.25 655.25 755.25 855.25 Channel Frequency (MHz) CSO (U) versus Channel Frequency Across Temperature CTB versus Channel Frequency Across Temperature (133 Channels, ICC = 150 mA) 100.00 255.25 (133 Channels, ICC = 150 mA) 89.00 -40C +25C 88.00 90.00 +85C 87.00 80.00 CTB (dBc) CSO (dBc) 86.00 70.00 60.00 85.00 84.00 50.00 83.00 -40C 40.00 +25C 82.00 +85C 30.00 55.3 81.00 155.3 255.3 355.3 455.3 555.3 Channel Frequency (MHz) DS120511 655.3 755.3 855.3 55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25 Channel Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 11 of 11