1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;
carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation (700 MHz to 1000 MHz)
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
W-CDMA
LTE
GSM
BLP8G10S-45P;
BLP8G10S-45PG
Power LDMOS transistor
Rev. 3 — 8 January 2016 Product data sheet
Table 1. Application performance
Typical RF performance at Tcase = 25
C; IDq = 224 mA in common source class-AB production
circuit.
Test signal f VDS PL(AV) GpDACPR
(MHz) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 960 28 2.5 20.8 19.8 49 [1]
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Product data sheet Rev. 3 — 8 January 2016 2 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLP8G10S-45P (SOT1223-2)
1drain 1
2drain 2
3 gate 2
4 gate 1
5source [1]
BLP8G10S-45PG (SOT1224-2)
1drain 1
2drain 2
3 gate 2
4 gate 1
5source [1]
12
43
pin 1 index
aaa-007625
4
3
5
1
2
12
43
pin 1 index
aaa-007625
4
3
5
1
2
Table 3. Ordering information
Type number Package
Name Description Version
BLP8G10S-45P HSOP4F plastic, heatsink small outline package; 4 leads (flat) SOT1223-2
BLP8G10S-45PG HSOP4 plastic, heatsink small outline package; 4 leads SOT1224-2
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
Tcase case temperature [1] - 150 C
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 3 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLP8G10S-45P and BLP8G10S-45PG are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq =224 mA; P
L = 25 W; f = 728 MHz.
Table 5. Thermal characteristics
Values specified for entire device.
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase =85C; PL=5W 0.85 K/W
Table 6. DC characteristics
Tcase =25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=0.4mA65--V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 40 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V--1.4A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V
-7.3-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 140 nA
gfs forward transconductance VDS =10V; I
D=2 A - 3.0 - S
RDS(on) drain-source on-state resistance VDS =10V; I
D=1.4A
VGS =V
GS(th) + 3.75 V
-500-m
Table 7. RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1-64 DPCH; f1 = 952.5 MHz; f2 = 957.5 MHz; RF performance at VDS =28V; I
Dq = 224 mA;
Tcase =25
C; per section in a class-AB production circuit unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL= 2.5 W 20 20.8 - dB
RLin input return loss PL=2.5W - 18 9dB
Ddrain efficiency PL= 2.5 W 18 19.8 - %
ACPR adjacent channel power ratio PL=2.5W - 49 43 dBc
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 4 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
7.2 Impedance information
[1] ZS and ZL defined in Figure 1.
[2] ZL is selected for maximum efficiency.
Table 8. Typical impedance
Measured load-pull data. Typical values per section unless otherwise specified.
f ZS [1] ZL [1][2]
(MHz) () ()
BLP8G10S-45P
720 11.6 j12.9 5.44 + j6.34
746 14.8 j9.2 4.51 + j6.03
757 15.3 j4.6 4.23 + j6.15
791 13.3 j1.6 3.99 + j5.62
820 6.5 j1.1 3.87 + j5.37
869 5.2 j2.4 4.25 + j4.49
894 4.4 j3.0 3.69 + j4.89
925 3.8 j3.9 3.49 + j4.72
942 3.6 j4.2 3.06 + j4.46
960 3.6 j4.7 3.29 + j4.04
BLP8G10S-45PG
720 13.2 j7.7 4.34 + j5.10
746 11.8 j4.6 4.58 + j4.94
757 10.4 j3.7 4.50 + j5.34
791 9.8 j2.5 4.19 + j4.87
869 5.0 j4.0 4.27 + j3.42
881 4.6 j4.2 3.62 + j3.45
894 4.2 j4.7 3.77 + j3.29
925 3.8 j5.6 3.60 + j3.15
942 3.7 j5.8 3.29 + j2.89
961 3.6 j6.4 3.36 + j2.47
Fig 1. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 5 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
7.3 Test circuit
See Table 9 for a list of components.
Fig 2. Component layout for class-AB production test circuit
Table 9. List of components
For test circuit see Figure 2.
Component Description Value Remarks
C11, C21, C32, C42 multilayer ceramic chip capacitor 10 F, 5 0 V
C12, C22, C33, C43 multilayer ceramic chip capacitor 1 F, 50 V
C13, C23, C34, C44 multilayer ceramic chip capacitor 43 pF ATC100B
C14, C24, C36, C46 multilayer ceramic chip capacitor 43 pF ATC100A
C31, C41 electrolytic capacitor 220 F, 6 3 V
C35, C45 multilayer ceramic chip capacitor 3.3 pF ATC100B
R11, R21 chip resistor 10 Multi Comp SMD 1206
S1 socket - Johnstech
aaa-007626
110 mm
76
mm
C34
C31
C33
C45
C35
C44
C43
C32
C42
C41
C12
C13
R11
C11
C21
R21 C22
C23
C14
C24
C36
C46
S1
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 6 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
7.4 Graphical data
7.4.1 2-Carrier W-CDMA
VDS =28V; I
Dq = 224 mA; carrier spacing = 5 MHz;
fc= 960 MHz
(1) VDS =24V
(2) VDS =28V
(3) VDS =32V
VDS =28V; I
Dq = 224 mA; carrier spacing = 5 MHz;
fc= 960 MHz
(1) VDS =24V
(2) VDS =28V
(3) VDS =32V
Fig 3. Power gain as a function of output power per
section; typical values
Fig 4. Drain efficiency as a function of output power
per section; typical values
VDS =28V; I
Dq = 224 mA; carrier spacing = 5 MHz; fc= 960 MHz
(1) VDS =24V
(2) VDS =28V
(3) VDS =32V
Fig 5. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values
aaa-007627
0 5 10 15 20 25 30
17
18
19
20
21
22
23
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1) (2)
(2)(2) (3)
(3)(3)
aaa-007628
0 5 10 15 20 25 30
20
30
40
50
60
70
PL (W)
ηD
ηD
(%)(%)(%) (1)(1)(1) (2)
(2)(2) (3)(3)(3)
aaa-007629
0 5 10 15 20 25 30
-50
-40
-30
-20
-10
PL (W)
ACPR
ACPR5M5M
ACPR5M
(dBc)(dBc)(dBc)
(1)(1)(1) (2)
(2)(2) (3)
(3)(3)
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 7 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
VDS =28V; I
Dq = 224 mA; carrier spacing = 5 MHz;
fc= 960 MHz
(1) Tcase =15C
(2) Tcase =25C
(3) Tcase =55C
(4) Tcase =85C
VDS =28V; I
Dq = 224 mA; carrier spacing = 5 MHz;
fc= 960 MHz
(1) Tcase =15C
(2) Tcase =25C
(3) Tcase =55C
(4) Tcase =85C
Fig 6. Power gain as a function of output power per
section; typical values
Fig 7. Drain efficiency as a function of output power
per section; typical values
VDS =28V; I
Dq = 224 mA; carrier spacing = 5 MHz; fc= 960 MHz
(1) Tcase =15C
(2) Tcase =25C
(3) Tcase =55C
(4) Tcase =85C
Fig 8. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values
aaa-007630
0 5 10 15 20 25 30
17
18
19
20
21
22
23
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
(4)
(4)(4)
aaa-007631
0 5 10 15 20 25 30
20
30
40
50
60
70
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(4)(4)(4)
aaa-007632
0 5 10 15 20 25 30
-50
-40
-30
-20
-10
PL (W)
ACPR
ACPR5M5M
ACPR5M
(dBc)(dBc)(dBc)
(4)(4)(4)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 8 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
8. Package outline
Fig 9. Package outline SOT1223-2 (HSOP4F)
HSOP4F: plastic, heatsink small outline package; 4 leads(flat) SOT1223-2
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 9 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
Fig 10. Package outline SOT1224-2 (HSOP4)
HSOP4: plastic, heatsink small outline package; 4 leads SOT1224-2
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 10 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
GSM Global System for Mobile Communications
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LTE Long Term Evolution
PAR Peak-to-Average Ratio
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLP8G10S-45P_8G10S-45PG v.3 20160108 Product data sheet BLP8G10S-45P_8G10S-45PG
v.2
Modifications: •Table 2 on page 2: table updated
•Table 3 on page 2: table updated
•Figure 9 on page 8: package outline changed from SOT1223-1 to SOT1223-2
•Figure 10 on page 9: package outline changed from SOT1224-1 to SOT1224-2
BLP8G10S-45P_8G10S-45PG v.2 20150901 Product data sheet BLP8G10S-45P_8G10S-45PG
v.1
BLP8G10S-45P_8G10S-45PG v.1 20130725 Product data sheet - -
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 11 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLP8G10S-45P_8G10S-45PG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 8 January 2016 12 of 13
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
© Ampleon Netherlands B.V. 2016. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 8 January 2016
Document identifier: BLP8G10S-45P_8G10S-45PG
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.4.1 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Handling information. . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13