TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5683, 2N5684 e@ 300 Watts at 25C Case Temperature e 50-A Rated Continuous Collector Current e Min ft of 2MHz at 10V,5A4 mechanical data 989SNZ GE9SNZ SAdAL The case outline falls within JEDEC-TO-3 except for jead diameter. THE COLLECTOR 1S ELECTRICAL CONTACT WITH THE CASE 1.573 MAX: L264 H3GW3I40 L6SL112 S-10 ON NIL3TING 1.197 0,312 MIN p +7 0.450, [0.675 1.177 0.525 R MAX 0.250 0.655 = S:G5 014 2 weaos 2 EMITTER a9 se obys = = 1.050 MAX MAX 0.225 -+|- g ae DA 0.205 0.16) t ee L 9.440 a.ist OVA 0.168 R MAX 9.420 2 HOLES BOTH ENDS 0.135 max-| i 0.200 SEATING PLANE CASE TEMPERATURE 1 BASE MEASUREMENT POINT DIMENSIONS ARE IN INCHES bsolute maximum ratings at 25C case temperature (unless otherwise noted) 2N5685 2N5686 *Collector-Base Voltage . . . ee 60 V 80Vv *Collector-Emitter Voltage (See Note 1 ee 60 V 80 V Emitter-Base Voltage www 5V SV *Continuous Collector Current 2 6 6 2 we a 50 Ae *Continuous Base Current . . . . Soe TB A *Continuous Device Dissipation at (or betow) 25 c Case Temperature (See Note 2) woe eee +300 W > Continuous Device Dissipation at (or below) 25C Free-Air Temperature (See Note 3) . . . o-5W "Operating Collector Junction Temperature Range. ww. we ee s BBPE to 200C *Storage Temperature Range .. . ce ~65C to 200C Terminal Temperature 1/16 Inch from Case for 10 Seconds Se + 235C > OTES: 1, These values apply when the base-emitter diode is open-circuited. 2. Derate linearly to 200C case ternperature at the rate of 1.715 W/C or refer to Dissipation Darating Curve, Figure 1. 3. Derate tinearly to 200C free-air temperature at the rate of 28.6 mW/C or refer to Dissipation Derating Curve, Figure 2. JEDEC registered data. This data sheet contains all applicable registered data in effect at the time of publication. TEXAS INSTRUMENTS 2-381 TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS *electrical characteristics at 25C case temperature (unless otherwise noted) 2N5685 2N5686 RAMETER TEST CONDITIONS UNIT PA eT ol MIN MAX {MIN MAX Collector-Emitt VIBR)CEO ter Ic = 200 mA, Ip = 0, See Note 6 60 80 Vv Breakdown Voltage Voce = 30, Ig =0 1 'CEO Collector Cutoff Current mA Vee = 40V, Ip =0 1 Voce = 60V, VBE =-15V 2 Vce = 80V, Vee = -1.5V 2 'cEV Collector Cutoff Current 5 BE = mA VcE = 60V, VeeE=~-15V, To= 150C 10 Voce = 80V, VepeE=-15V, To= 150C 10 Voce = 60V, le =0 2 'cBo Collector Cutoff Current cB E mA Vop = 80V, le =0 2 lEBo Emitter Cutoff Current Vep=5V, Iq=0 5 5} mA Static Forward Current Voce =2V, I=25A 15 60 15 60 hee . See Notes 6 and 7 Transfer Ratio Voce =5V, ic =50A ip=2.5A, 1e= 254 2 2 VBE Base-Emitter Voltage See Notes 6 and 7 v Vee =2V, Ig = 25A 2 2 Collector-Emitter ip=2.5A, Ic =25A 1 4 VCE (sat) . 8 c See Notes 6 and 7 OV Saturation Voltage (gp = 104, ic = 50A 5 5 h Small-Signal Common-E mitter Vv 5V \ 10A f= 1kH 18 15 : = , = : = Zz fe Forward Current Transfer Ratio ce c Smalt-Signal Common-E mitter hfe , VceE = 10V, Ic=5A, f= 1 MHz 2 2 Forward Current Transfer Ratio Common-Base Open-Circuit Cobo Penns Vop=10V, te =0, f= 0.1 MHz 1200 1200| pF Output Capacitance NOTES: 6. These parameters must be measured using pulse techniques. ty, = 300 us, duty cycle < 2%. 7. These parameters ara rneasured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.125 inch from the device body. THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE = 400 = 6 s 3 * Bos & 8 a 300 a g 8 a4 NN = 250 3 N a RaJA = 35 C 3 200 3 3 IN 3 & sae J 5 150 8 9 Resc S 0.58C/w E 100 \ E $4 % 50 a N 2 7 0 9 0 25 50 75 100 125 150 175 200 6 25 50 75 100 126 150 178 200 TcCase TemperatureC TaFree-Air TemperatureC FIGURE 1 FIGURE 2 2-382 TEXAS INSTRUMENTS TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME 'N ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE. 3-8 Prot Typ Ta = 250C Tc = 259C VCEO tcp hfe = @- Ic type (100 9) (100 C) min max min max Ww Ww v A A 2N 5685 5 300 60 50 15 60 25 2N 5686 5 300 80 50 15 60 25 2N 5758 5 150 100 6 25 100 3 2N 5759 5 150 120 6 20 80 3 2N 5760 5 150 140 6 15 60 3 2N 6326 5 200 60 30 12 15 2N 6327 5 200 80 30 12 15 2N 6328 5 200 100 30 12 15 NPN-LEISTUNGSTRANSISTOREN (Hochvolt-Anwendungen) NPN POWER TRANSISTORS (High-Voltage Applications) Prot Typ Tg = 25C VCEO Icb hre @ Ic type (To = 100 C} min max min max w Vv A A BD 410 20 325 1 30 240 0,05 BD 253 50 200 4 15 1 BD 253 A 50 250 4 15 1 BD 253 B 50 300 4 15 1 BD 253C 50 400 4 15 1 TIP 660 125 200 5 500 3 TIP 661 125 300 5 500 3 TIP 662 125 400 5 500 3 BU 105 (10) 1500 25 BU 108 (12,5) 1500 5 BU 126 50 750 6 15 60 1,0 BUY 69A 100 1000* 10 15 1,0 BUY 69B 100 g00* 10 15 10 BUY 69C 100 500* 10 15 1,0 TEXAS INSTRUMENTS fr Ices @ VCE Gehduse Anwendungen, Bemerkungen min (ceo) package applications, remarks MHz uA Vv 0.15 (1000) 30 TO-3 Verstarker, schnelter Schalter 0,15 (1000) 40 TO-3 komplementar zu 2N 5683, 2N 5684 amplifier, fast switch complementary to 2N 5683, 2N 5684 1 (1000) 50 TO-3 Verstarker, schneller Schalter 1 (1000) 60 TO-3 komplementar zu TIP 544, TIP 545, TIP 546 1 (1000) 70 TO-3 amplifier, fast switch complementary to TIP 544, TIP 545, TIP 546 3 (1000) 30 TO-3 Verstarker, schneller Schalter 3 (1000) 40 TO-3 komplementar zu 2N 6329, 2N 6330, 2N 6331 3 (1000) 50 TO-3 amplifier, fast switch . complementary to 2N 6329, 2N 6330, 2N 6331 fT "Icev (ICEO) Gehause Anwendungen, Bemerkungen min Ices @ VCE package applications, remarks MHz mA Vv 15 2 35 SOT-32 NF-Endstufen in Rundf.- u. FS.-Empfangern VcBo > 500 V for vertical outputs stages low-frequency final stages in broadcasting and TV receivers VesBo > 500 V 15 2 350 TO-3 Netzgerate und Inverter 18 2 500 TO-3 Power supply and inverter 15 2 700 TO-3 15 2 900 TO-3 (2) 100 TO-3 Verstarker, Schalter, Anwendung in Netzgeraten. (2) 200 TO-3 Hochvoltanwendung (2) 300 TO-3 amplifier, switch, power supply high voltage 1 1500 TO-3 Fernsehanwendung, Horizontal-Ablenkendstufen (1) 1500 TO-3 Schnelle Schalteranwendung bei hohen Strmen tr typ. 400 ns bei IC=8A TV applications, horizontal-defiection output stage high-speed switching applications at high currens tT typ. 400 ns @ IC = 8A 10 0,005 600 TO-3 Fur Schalteranwendungen und Netzgerate switch, power supply (1) 1000 TO-3 Fir Schalteranwendungen 1) 800 TO-3 switching applications (1) 500 TO-3 TEXAS INSTRUMENTS 39