BZV90-C27 - NXP - Datasheet.Directory

DATA SH EET

Product data sheet

Supersedes data of 1996 Oct 25

1999 May 17

DISCRETE SEMICONDUCTORS

BZV90 series

Voltage regulator diodes

ook, halfpage

M3D087

1999 May 17 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZV90 series

FEATURES

•Total power dissipation:

max. 1 500 mW

•Tolerance series: approx. ±5%

•Working voltage range:

nom. 2.4 to 75 V (E24 range)

•Non-repetitive peak reverse power

dissipation: max. 40 W.

APPLICATIONS

•General regulation functions.

DESCRIPTION

Medium-power voltage regulator

diodes in SOT223 plastic SMD

packages.

The diodes are availab l e in the

normalized E24 ap prox. ±5%

tolerance range. The series consists

of 37 types with nominal working

voltages fro m 2.4 to 75 V

(BZV90-C2V4 to C75).

PINNING

PIN DESCRIPTION

1anode

2, 4 cathode

3anode

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage 4

123

MAM242

Top view

2, 4

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g System (IEC 1 34).

Note

1. Device mounted o n an FR4 double-sided c opper-clad printed circuit-board; copper area = 2 cm2.

ELECTRICAL CHARACTERISTIC S

Total series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −400 mA

IZSM non-repetitive peak reverse current tp = 100 μs; square wave;

Tj = 25 °C prior to surge see Table

“Per type”

Ptot total power dissipation Tamb = 25 °C; note 1 −1 500 mW

PZSM non-repetitive peak re verse power

dissipation tp = 100 μs; square wave;

Tj = 25 °C prior to surge; see Fig.2 −40 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VFforward voltage IF = 50 mA; see Fig.3 −1.0 V

1999 May 17 3

NXP Semiconductors Product data sheet

Voltage regulator diodes BZV90 series

Per type

Tj = 25 °C unless otherwise specified.

BZV90-

CXXX

WORKING

VOLTAGE

VZ (V)

at IZtest

DIFFERENTIAL

RESISTANCE

rdif (Ω)

at IZtest

TEMP. COEFF.

SZ (mV/K)

at IZtest

see Figs 4 and 5

TEST

CURRENT

IZtest (mA)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

at VR = 0 V

REVERSE

CURRENT at

REVERSE

VOLTAGE

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp = 100 μs;

Tamb = 25 °C

IR (μA) VR

(V)

MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.

2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0

2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0

3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0

3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 51.0 6.0

3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 51.0 6.0

3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 31.0 6.0

4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 31.0 6.0

4V7 4.4 5.0 50 80 −3.5 −1.4 0.2 5300 32.0 6.0

5V1 4.8 5.4 40 60 −2.7 −0.8 1.2 5300 22.0 6.0

5V6 5.2 6.0 15 40 −2.0 1.2 2.5 5300 12.0 6.0

6V2 5.8 6.6 610 0.4 2.3 3.7 5200 34.0 6.0

6V8 6.4 7.2 615 1.2 3.0 4.5 5200 24.0 6.0

7V5 7.0 7.9 615 2.5 4.0 5.3 5150 15.0 4.0

8V2 7.7 8.7 615 3.2 4.6 6.2 5150 0.7 5.0 4.0

9V1 8.5 9.6 615 3.8 5.5 7.0 5150 0.5 6.0 3.0

10 9.4 10.6 820 4.5 6.4 8.0 590 0.2 7.0 3.0

11 10.4 11.6 10 20 5.4 7.4 9.0 585 0.1 8.0 2.5

12 11.4 12.7 10 25 6.0 8.4 10.0 585 0.1 8.0 2.5

13 12.4 14.1 10 30 7.0 9.4 11.0 580 0.1 8.0 2.5

15 13.8 15.6 10 30 9.2 11.4 13.0 575 0.05 10.5 2.0

16 15.3 17.1 10 40 10.4 12.4 14.0 575 0.05 11.2 1.5

18 16.8 19.1 10 45 12.4 14.4 16.0 570 0.05 12.6 1.5

20 18.8 21.2 15 55 14.4 16.4 18.0 560 0.05 14.0 1.5

1999 May 17 4

NXP Semiconductors Product data sheet

Voltage regulator diodes BZV90 series

22 20.8 23.3 20 55 16.4 18.4 20.0 560 0.05 15.4 1.25

24 22.8 25.6 25 70 18.4 20.4 22.0 555 0.05 16.8 1.25

27 25.0 28.9 25 80 21.4 23.4 25.3 250 0.05 18.9 1.0

30 28.0 32.0 30 80 24.4 26.6 29.4 250 0.05 21.0 1.0

33 31.0 35.0 35 80 27.4 29.7 33.4 245 0.05 23.1 0.9

36 34.0 38.0 35 90 30.4 33.0 37.4 245 0.05 25.2 0.8

39 37.0 41.0 40 130 33.4 36.4 41.2 245 0.05 27.3 0.7

43 40.0 46.0 45 150 37.6 41.2 46.6 240 0.05 30.1 0.6

47 44.0 50.0 50 170 42.0 46.1 51.8 240 0.05 32.9 0.5

51 48.0 54.0 60 180 46.6 51.0 57.2 240 0.05 35.7 0.4

56 52.0 60.0 70 200 52.2 57.0 63.8 240 0.05 39.2 0.3

62 58.0 66.0 80 215 58.8 64.4 71.6 235 0.05 43.4 0.3

68 64.0 72.0 90 240 65.6 71.7 79.8 235 0.05 47.6 0.25

75 70.0 79.0 95 255 73.4 80.2 88.6 235 0.05 52.5 0.2

BZV90-

CXXX

WORKING

VOLTAGE

VZ (V)

at IZtest

DIFFERENTIAL

RESISTANCE

rdif (Ω)

at IZtest

TEMP. COEFF.

SZ (mV/K)

at IZtest

see Figs 4 and 5

TEST

CURRENT

IZtest (mA)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

at VR = 0 V

REVERSE

CURRENT at

REVERSE

VOLTAGE

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp = 100 μs;

Tamb = 25 °C

IR (μA) VR

(V)

MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.

1999 May 17 5

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZV90 series

THERMAL CHARACTE RISTICS

Note

1. Device mounted o n an FR4 double-sided c opper-clad printed circuit-board; copper area = 2 cm2.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient lead length max.; note 1 83.3 K/W

GRAPHICAL DATA

Fig.2 Maximum permissible non-repetitive peak

reverse powe r dissipation versus dur ation.

handbook, halfpage

MBG801

103

1 duration (ms)

PZSM

(W)

102

10−1

(1)

(2)

(1) Tj = 25 °C (prior to surge).

(2) Tj = 150 °C (prior to surge).

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj = 25 °C.

1999 May 17 6

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZV90 series

Fig.4 Temperature coefficient as a function of working current; typical values.

handbook, full pagewidth

−3

MBG927

10-310-210-11

IZ (A)

−2

−1

(mV/K) 4V3 3V9

3V6

3V3

3V0

2V7

2V4

BZV90-C2V4 to C4V3.

Tj = 25 to 150 °C.

Fig.5 Temperature coefficient as a functi on of

working current; typical values.

BZV90-C4V7 to C10.

Tj = 25 to 150 °C.

handbook, halfpage

02016

−5

MBG924

4812 IZ (mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

1999 May 17 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZV90 series

PACKAGE OUTLINE

UNIT A

cDEe

Qywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

0 2 4 mm

scale

132

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

1999 May 17 8

NXP Semiconductors Product data sheet

Voltage regulator diodes BZV90 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document does not fo rm p art of any quotation or cont ra ct, is b elieve d to be accurate and reli a ble and may be change d

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other ind ustrial or intellectual property right s.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 115002/00/03/pp9 Date of releas e: 1999 May 17 Document orde r number: 9397 750 05928