MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N-Channel SOT-23 Features * NVBF Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) VGS VGSM 20 40 Vdc Vpk ID Adc IDM 0.5 0.8 Symbol Max Unit 225 1.8 mW mW/C RqJA 556 C/W TJ, Tstg -55 to +150 C Drain Current - Continuous - Pulsed SOT-23 CASE 318 STYLE 21 N-Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR- 5 = 1.0 0.75 0.062 in. 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 6Z MG G Gate 1 2 Source 6Z = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 1994 October, 2016 - Rev. 10 1 Publication Order Number: MMBF170LT1/D MMBF170L, NVBF170L ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 - Vdc IGSS - 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) - 5.0 W ID(off) - 0.5 mA Ciss - 60 pF td(on) - 10 ns td(off) - 10 OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) On-State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time Turn-Off Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping MMBF170LT1G SOT-23 (TO-236) (Pb-Free) 3000 / Tape & Reel MMBF170LT3G SOT-23 (TO-236) (Pb-Free) 10000 / Tape & Reel NVBF170LT1G* SOT-23 (TO-236) (Pb-Free) 3000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V ton td(on) 125 W PULSE GENERATOR 50 W Vin 20 dB 50 W ATTENUATOR 40 pF TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout tr 90% 50% Vin 1 MW 90% 10% INPUT 50 W toff tf td(off) 90% 50% 10% PULSE WIDTH (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit Figure 2. Switching Waveform www.onsemi.com 2 MMBF170L, NVBF170L TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25C VDS 10 V ID, DRAIN CURRENT (A) 1.0 4.5 V 0.8 4.2 V 0.6 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 0.4 0.2 0 0 1 2 3 4 6 5 0.6 0.4 TJ = 150C 0.2 0 7 TJ = 25C TJ = -55C 1 2 3 4 5 6 7 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Region Characteristics Figure 4. Transfer Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) 8 TJ = 25C 7 0.8 15 30 QT 25 12.5 6 5 4 3 VGS = 4.5 V 2 1 0 0.15 VGS = 10 V 0.25 0.35 0.45 0.55 0.65 0.75 10 VGS VDS Qgs 5 Qgd 10 ID = 0.5 A TJ = 25C 2.5 0 0 0.5 1 1.5 ID, DRAIN CURRENT (A) Qg, TOTAL GATE CHARGE (nC) Figure 5. On-Resistance vs. Drain Current and Gate Voltage Figure 6. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.24 0.22 0.20 0.18 VGS = 0 V TJ = 25C 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Diode Forward Voltage vs. Current www.onsemi.com 3 20 15 7.5 0.85 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 5.0 V VGS = 10 V IS, SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1.0 5 0 2 MMBF170L, NVBF170L 2.4 2.2 2.0 VGS = 10 V ID = 200 mA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 20 60 T, TEMPERATURE (C) 100 140 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 1.2 VDS = VGS ID = 1.0 mA 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 8. Temperature versus Static Drain-Source On-Resistance -20 20 60 T, TEMPERATURE (C) 100 Figure 9. Temperature versus Gate Threshold Voltage www.onsemi.com 4 140 MMBF170L, NVBF170L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 --- 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBF170LT1/D