© Semiconductor Components Industries, LLC, 1994
October, 2016 Rev. 10
1Publication Order Number:
MMBF170LT1/D
MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, NChannel SOT23
Features
NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 Vdc
DrainGate Voltage VDGS 60 Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current Continuous
Pulsed
ID
IDM
0.5
0.8
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 0.75 0.062 in.
3
1
2
NChannel
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM
& PIN ASSIGNMENT
500 mA, 60 V
RDS(on) = 5 W
3
Drain
2 SourceGate 1
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ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
6Z MG
G
6Z = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
MMBF170L, NVBF170L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 60 Vdc
GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSS 10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) 5.0 W
OnState Drain Current (VDS = 25 Vdc, VGS = 0) ID(off) 0.5 mA
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss 60 pF
SWITCHING CHARACTERISTICS (Note 1)
TurnOn Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)
Figure 1
td(on) 10 ns
TurnOff Delay Time td(off) 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
MMBF170LT1G SOT23 (TO236)
(PbFree)
3000 / Tape & Reel
MMBF170LT3G SOT23 (TO236)
(PbFree)
10000 / Tape & Reel
NVBF170LT1G* SOT23 (TO236)
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
20 dB 50 W
ATTENUATOR
PULSE
GENERATOR
50 W
50 W1 MW
Vout
125 W
+25 V
40 pF
Vin
TO SAMPLING
SCOPE
50 W INPUT
PULSE WIDTH
50%
90%
50%
10%
10%
90% 90%
Vin
OUTPUT
INVERTED
INPUT
(Vin AMPLITUDE 10 VOLTS)
Vout
toff
tf
td(off)
ton
td(on) tr
MMBF170L, NVBF170L
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3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 3. OnRegion Characteristics Figure 4. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
7543210
0
0.2
0.4
0.6
0.8
4321
0
0.4
0.8
1.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.0
1.2
TJ = 25°C
VGS = 10 V
4.2 V
5.0 V
4.5 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
VDS 10 V
TJ = 25°C
TJ = 150°C
TJ = 55°C
0.2
0.6
Figure 5. OnResistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
0.850.550.450.350.250.15
0
1
2
3
4
5
RDS(on), DRAINTOSOURCE RESISTANCE (W)
0.65 0.75
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
Figure 6. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
10.50
0
2.5
5
12.5
15
VGS, GATETOSOURCE VOLTAGE (V)
1.5
10
7.5
VDS, DRAINTOSOURCE VOLTAGE (V)
30
25
15
10
5
0
ID = 0.5 A
TJ = 25°C
QT
VDS VGS
Qgd
Qgs
Figure 7. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
0.90.80.70.60.50.4
0
0.04
0.20
IS, SOURCE CURRENT (A)
0.08
0.12
0.16
0.24
VGS = 0 V
TJ = 25°C
6
7
8
2
20
0.02
0.06
0.22
0.10
0.14
0.18
1.00.30.20.1
8765
6
MMBF170L, NVBF170L
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60 20 20 60 100 140 60 20 20 60 100 140
T, TEMPERATURE (°C)
Figure 8. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (°C)
Figure 9. Temperature versus Gate
Threshold Voltage
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
MMBF170L, NVBF170L
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBF170LT1/D
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