PMBF170
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 June 2000 Product specification
c
c
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PMBF170 in SOT23.
2. Features
■TrenchMOS™ technology
■Very fast switching
■Logic level compatible
■Subminiature surface mount package.
3. Applications
■Relay driver
■High speed line driver
■Logic level translator.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23 N-channel MOSFET
2 source (s)
3 drain (d)
12
3
03ab44
d
g
s
03ab30
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 2 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−60 V
IDdrain current (DC) Tsp =25°C; VGS =10V −300 mA
Ptot total power dissipation Tsp =25°C−0.83 W
Tjjunction temperature −150 °C
RDSon drain-source on-state resistance VGS = 10 V; ID= 500 mA 2.8 5 Ω
VGS = 4.5 V; ID= 75 mA 3.8 5.3 Ω
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−60 V
VDGR drain-gate voltage (DC) Tj=25to150°C; RGS =20kΩ−60 V
VGS gate-source voltage (DC) −±20 V
IDdrain current (DC) Tsp =25°C; VGS =10V;
Figure 2 and 3−300 mA
Tsp = 100 °C; VGS =10V;Figure 2 −190 mA
IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs;
Figure 3 −1.2 A
Ptot total power dissipation Tsp =25°C; Figure 1 −0.83 W
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −65 +150 °C
Source-drain diode
ISsource (diode forward) current (DC) Tsp =25°C−300 mA
ISM peak source (diode forward) current Tsp =25°C; pulsed; tp≤10 µs−1.2 A
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 3 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
VGS ≥4.5 V
Fig 1. Normalized total power dissipation as a
function of solder point temperature. Fig 2. Normalized continuous drain current as a
function of solder point temperature.
Tsp =25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Pder
Tsp (oC)
(%)
03aa25
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Ider (%)
Tsp (oC)
Pder Ptot
Ptot 25 C
°
()
---------------------- 100%×=
Ider ID
ID25C
°
()
-------------------100%×=
03aa03
10-2
10-1
1
10
11010
2
VDS (V)
ID
(A)
D.C. 100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 µs
100 µs
Tsp = 25oC
tp
tp
T
P
t
T
δ =
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 4 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder
point mounted on a metal clad substrate;
Figure 4 150 K/W
Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board;
minimum footprint 350 K/W
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
03aa01
10-1
1
10
102
103
tp (s)
Zth(j-sp)
K/W
single pulse
0.2
0.1
0.05
0.02
δ = 0.5
tp
tp
T
P
t
T
δ
=
10-4
10-5 10-3 10-2 10-1 110
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 5 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID=10µA; VGS =0V
Tj=25°C6075−V
Tj=−55 °C55−−V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS;
Figure 9
Tj=25°C12−V
Tj= 150 °C 0.6 −−V
Tj=−55 °C−−3.5 V
IDSS drain-source leakage current VDS = 48 V; VGS =0V
Tj=25°C−0.01 1.0 µA
Tj= 150 °C−−10 µA
VDS = 25 V; VGS =0V
Tj=25°C−5 500 nA
IGSS gate-source leakage current VGS =±15 V; VDS =0V −10 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D= 500 mA;
Figure 7 and 8
Tj=25°C−2.8 5 Ω
Tj= 150 °C−−9.25 Ω
VGS = 4.5 V; ID=75mA;
Figure 7 and 8
Tj=25°C−3.8 5.3 Ω
Dynamic characteristics
gfs forward transconductance VDS = 10 V; ID= 200 mA;
Figure 11 100 300 −mS
Ciss input capacitance VGS =0V; V
DS =10V;
f = 1 MHz; Figure 12 −25 40 pF
Coss output capacitance −18 30 pF
Crss reverse transfer capacitance −7.5 10 pF
ton turn-on time VDD = 50 V; RD= 250 Ω;
VGS =10V; R
G=50Ω;
RGS =50Ω
−310ns
toff turn-off time −12 15 ns
Source-drain diode
VSD source-drain (diode forward)
voltage IS= 300 mA; VGS =0V;
Figure 13 −0.85 1.5 V
trr reverse recovery time IS= 300 mA;
dIS/dt = −100 A/µs;
VGS =0V; V
DS =25V
−30 −ns
Qrrecovered charge −30 −nC
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 6 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
Tj=25°CT
j=25°C and 150 °C; VDS ≥ID×RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values. Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa04
0
0.2
0.4
0.6
0.8
1
0 0.4 0.8 1.2 1.6 2
3.5 V
Tj = 25oC
4 V
4.5 V
3 V
VDS (V)
ID (A)
VGS = 10 V
03aa06
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
01234567
VDS
> ID
X RDSon
Tj = 25oC150oC
ID (A)
VGS (V)
03aa05
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Tj = 25oC
4.5 V
4 V
3.5V
3 V
RDSon (Ω)
VGS = 10 V
ID (A)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60 -20 20 60 100 140 180
Tj (oC)
a
aRDSon
RDSon 25 C
°
()
----------------------------
=
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 7 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
ID= 1 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature. Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj=25°C and 150 °C; VDS ≥ID×RDSon VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values. Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60 -20 20 60 100 140 180
typ
min
VGS(th) (V)
Tj (oC)
03aa37
0 0.5 1 1.5 2 2.5 3
typmin
ID
(A)
VGS (V)
10-6
10-5
10-4
10-3
10-2
10-1
03aa07
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Tj = 25oC
150oC
VDS
> ID
X RDSon
gfs (S)
ID (A)
03aa09
1
10
102
10-1 11010
2
Ciss
Coss
Crss
Ciss, Coss
Crss (pF)
VDS (V)
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 8 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
Tj=25°C and 150 °C; VGS =0V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
03aa08
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1 1.2
Tj = 25oC
150oC
VGS
= 0 V
IS (A)
VSD (V)
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 9 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Fig 14. SOT23.
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 10 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
10. Revision history
Table 6: Revision history
Rev Date CPCN Description
03 20000622 HZG303 Product specification; third version; supersedes PMBF170_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
02 19970623 - Product specification; second version.
01 19901031 - Product specification; initial version.
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 11 of 13
9397 750 07208 © Philips Electronics N.V. 2000 All rights reserved.
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Datasheet status Product status Definition[1]
Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 12 of 13
9397 750 07208 © Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors - a worldwide company
Argentina: see South America
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Tel. +43 160 101, Fax. +43 160 101 1210
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102
Canada: Tel. +1 800 234 7381
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 14 099 6161, Fax. +33 14 099 6427
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: see Austria
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2865, Fax. +886 22 134 2874
Thailand: Tel. +66 27 45 4090, Fax. +66 23 98 0793
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA69)
© Philips Electronics N.V. 2000. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 23 June 2000 Document order number: 9397 750 07208
Contents
Philips Semiconductors PMBF170
N-channel enhancement mode field-effect transistor
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance. . . . . . . . . . . . . . 4
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
