2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET ADE-208-1266 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1313 Symbol Ratings Unit VDSS 450 V 2SK1314 500 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 30 V 5 A 20 A 5 A Channel dissipation Pch* 50 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK1313(L)(S), 2SK1314(L)(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Drain to source 2SK1313 V(BR)DSS 450 breakdown voltage 2SK1314 500 Typ Max Unit Test conditions -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 30 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage 2SK1313 I DSS -- -- 250 A VDS = 360 V, VGS = 0 drain current 2SK1314 Gate to source cutoff voltage VDS = 400 V, VGS = 0 VGS(off) 2.0 -- 3.0 Static Drain to source 2SK1313 RDS(on) -- 1.0 1.4 on state resistance -- 1.2 1.5 2SK1314 V I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V *1 Forward transfer admittance |yfs| 2.5 4.0 -- S I D = 2.5 A, VDS = 10 V *1 Input capacitance Ciss -- 640 -- pF VDS = 10 V, VGS = 0, Output capacitance Coss -- 160 -- pF f = 1 MHz Reverse transfer capacitance Crss -- 20 -- pF Turn-on delay time t d(on) -- 10 -- ns I D = 2.5 A, VGS = 10 V, Rise time tr -- 25 -- ns RL = 12 Turn-off delay time t d(off) -- 50 -- ns Fall time tf -- 30 -- ns Body to drain diode forward voltage VDF -- 0.95 -- V I F = 5 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 300 -- ns I F = 5 A, VGS = 0, diF/dt = 100 A/s Note: 1. Pulse test See characteristic curves of 2SK1155, 2SK1156. 3 2SK1313(L)(S), 2SK1314(L)(S) Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 4 50 100 Case Temperature TC (C) 150 2SK1313(L)(S), 2SK1314(L)(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 5 2SK1313(L)(S), 2SK1314(L)(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SK1313(L)(S), 2SK1314(L)(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 7 2SK1313(L)(S), 2SK1314(L)(S) Cautions 1. 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