2SK1313(L)/(S) - Hitachi Semiconductor

2SK1313(L)(S), 2SK1314(L)(S)

Silicon N-Channel MOS FET

ADE-208-1266 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

2SK1313(L)(S), 2SK1314(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1313 VDSS 450 V

2SK1314 500

Gate to source voltage VGSS ±30 V

Drain current ID5A

Drain peak current ID(pulse)*120 A

Body to drain diode reverse drain current IDR 5A

Channel dissipation Pch*250 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW 10 µs, duty cycle 1%

2. Value at TC = 25°C

2SK1313(L)(S), 2SK1314(L)(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1313 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0

breakdown voltage 2SK1314 500

Gate to source breakdown

voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0

Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0

Zero gate voltage 2SK1313 IDSS — — 250 µA VDS = 360 V, VGS = 0

drain current 2SK1314 VDS = 400 V, VGS = 0

Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V

Static Drain to source 2SK1313 RDS(on) — 1.0 1.4 ID = 2.5 A, VGS = 10 V *1

on state resistance 2SK1314 — 1.2 1.5

Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A, VDS = 10 V *1

Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0,

Output capacitance Coss — 160 — pF f = 1 MHz

Reverse transfer capacitance Crss — 20 — pF

Turn-on delay time td(on) — 10 — ns ID = 2.5 A, VGS = 10 V,

Rise time tr— 25 — ns RL = 12

Turn-off delay time td(off) —50—ns

Fall time tf—30—ns

Body to drain diode forward

voltage VDF — 0.95 — V IF = 5 A, VGS = 0

Body to drain diode reverse

recovery time trr — 300 — ns IF = 5 A, VGS = 0,

diF/dt = 100 A/µs

Note: 1. Pulse test

See characteristic curves of 2SK1155, 2SK1156.

2SK1313(L)(S), 2SK1314(L)(S)

0 50 100 150

Case Temperature TC (°C)

Channel Dissipation Pch (W)

Power vs. Temperature Derating

2SK1313(L)(S), 2SK1314(L)(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK1313(L)(S), 2SK1314(L)(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK1313(L)(S), 2SK1314(L)(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK1313(L)(S), 2SK1314(L)(S)

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received the latest product standards or specifications before final design, purchase or use.

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

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