il HEWLETT Ke PACKARD COMPONENTS SCHOTTKY BARRIER DIODES FOR MIXERS AND DETECTORS 082-2213/74 5082-2285- 88/95 -98 5082 -2350/51 5082-2400/01 082-2620/21/65/66 082-2701/02/ 06/07 082-2711-14 /21-24 5082-2817/18 Features LOW AND STABLE NOISE FIGURE HIGH BURNOUT RATING 15 W RF Pulse Power Incident RUGGED DESIGN HIGH UNIFORMITY BOTH MEDIUM AND LOW BARRIER DIODES AVAILABLE Description / Applications These Schottky diodes are optimized for use in broad band and narrow band microstrip, coaxial, or waveguide mixer assemblies operating to 18 GHz. The low barrier diodes give optimum noise figure performance at low local oscillator drive levels. Medium barrier diodes provide a wider dynamic range for lower distortion mixer designs. The 5082-2350, -2400, -2510 and -2565 have extremely low 1/f noise, making them ideal for use as Doppler mixers. Maximum Ratings at Tease =25C Junction Operating and Storage Temperature Range 5082-2400, 2401, 2565, 2566, 2350, 2351, 2520, 2521 Lecce cece eee eee eee eet e eee -60C to +125C All other diodes .................. -60C to +150C Operation of these devices within the above temperature ratings will assure a device Mean Time Between Failure (MTBF) of approximately 1 x 107 hours. CW Power Dissipation ....................-- 200 mW Derate linearly to 0 W at max. rated temperature (Measured in an infinite heat sink). Pulse Power Dissipation Peak power absorbed by the diode. 1 ws pulse, Du = .001 5082-2400, 2350 1... ke eee eee eee ee 15W 5082-2565, 2520) ... ee eee ee 4wW All other diodeS 21... cece ec eee eee 1w Soldering Temperature ............ 230C for 5 sec. Note: The 5082-2200 and -2700 series are pulse sensitive. Handle with care to avoid static discharge through the diode. Package Dimensions SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES x) 97Electrical Specifications at T,=25C Part ee Number | Matched | 8082. | Pair 5082- | Barrier ee 2401 2351 2566 2 ona 2712, |, 2288 ae a 2722 | Medi 2274 ANF<0.3aB | OZ)F<252 | a F5082-2201 Typical | Junction Cas citance | Jo(pF) Parameters | Breakdown Ver (VY) | 410. 07 0.9 - 0.7 Aa 30 ob . FORWARD CURRENT (ma). . / if. - FORWARD.DC VOLTAGE Figure 1. Typical Forward Characteristics at Ta = 25C. 98 Figure 2. Typical Diode Noise Ratio vs. Frequency at 1 mA Current.; : f=9.3 \ : HP PACKAGE OUT Se eh ON i Bop Tare 2 wa 400 PF QO : OF OL | ro SOIR Bo oa age ws LOCAL OSCILLATOR POWER (dBn co << oe < S . . . . . . a Figure 3. Typicat Noise Figure and IF Impedance vs. Figure 4. Typical Noise Figure and IF Impedance vs. O Local Oscillator Power, 5082-2285 through -2288. Local Oscillator Power, 5082-2295 through -2298. gv Zz Diode unmatched in 500 line. Diode unmatched in 502. line. E oO EO Or IO 500 O= \ or a 400 = \ < 3 300 ibe * 2 ce < : 100 0b a al 12, +8 4 0 4 LOCAL OSCILLATOR POWE Figure 5. Typical Noise Figure and IF Impedance vs. Figure 6. Typical HP 5082-2400 Noise Figure vs. Loca! Oscillator Power. Diode matched at each local Frequency with PLo = 1.0 mW, fir = 30 MHz, and oscillator power level (5082-2285, 2295). NFir = 1.5 dB. Mount tuned at each frequency. 90 a0 a . a i. 5 QE EO uh. 60 pas nail : a) 8 10. 12.14 FREQUENCY (GHz) Figure 7. Typical Noise Figure vs. Frequency. IF = Figure 8. Typica! Noise Figure vs. Frequency. The 30 MHz, NFir = 1.5 dB, Plo = 1 mW. Diode matched at mount is tuned for minimum noise figure at each each frequency (5082-2200, 2700 series). frequency. 99Figure 10. Single Sideband Noise Figure (including an IF- amplifier noise figure of 1.5 dB) vs. Incident LO Power for Various dc-load Resistances Rt. (The mount is tuned for minimum noise figure at each LO power level). Figure 9. Typical Noise Figure and IF Impedance for 5082-2711 vs. Local Oscillator Power. Note the improved performance at low levels of LO power when dc bias is superimposed (dashed curves). Figure 12. Typical 5082-2300 and 2400 Series IF Impedance vs. Local Oscillator Power with flo = 2.0 GHz and IF = 30 MHz. Figure 11. Typical 5082-2350 Noise Figure vs. Local Oscillator Power at 1.0, 2.0 and 3.0 GHz with IF = 30 MHz and NFir = 1.5 dB. Figure 14. Typical Admittance Characteristics, 5082-2400 Figure 13. Typical Admittance Characteristics, 5082-2817 with self bias. with self bias. 100Soy nw 4 Q Oo 25 QO uw moO wz ox ok {fO m~- a < tO tO Or Lo O= or Figure 15. Typical Admittance Characteristics, 5082-2400 Figure 16. Typical Admittance Characteristics, 5082-2350 with external bias. with self bias. @ Figure 17. Typical Admittance Characteristics, 5082-2350 Figure 18. Typical Admittance Characteristics, 5082-2565 with external bias. with self bias. 101Figure 19. Typical Admittance Characteristics, 5082-2565 Figure 20. Typical Admittance Characteristics, 5082-2520 with external bias. with self bias. Figure 21. Typical Admittance Characteristics, 5082-2520 Figure 22. Typical Admittance Characteristics, 5082-2713 with external bias. with self bias. 102on mW wa QAO 26 a Lu mo LW ox oF ae) a5 CZ -O KO Or LO BI Figure 23. Typical Admittance Characteristics, 5082-2711 Figure 24. Typical Admittance Characteristics, 5082-2285 with self bias. with self bias. Figure 25. Typical Admittance Characteristics, 5082-2287 Figure 26. Typical Admittance Characteristics, 5082-2701 with self bias. with self bias. 103Figure 27. Typical Admittance Characteristics, 5082-2702 Figure 28. Typical Admittance Characteristics, 5082-2295 with self bias. with self bias. 0.36 nH 4n o YN AWN 0.09 pF 0.357 pF 2662 oO Figure 31. Model for 5082-2701 Mixer Diodes Rectified Current 1.5 mA. 104