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09/21/04
IRF7478PbF
SMPS MOSFET HEXFET® Power MOSFET
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A
IDM Pulsed Drain Current 56
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
VDSS RDS(on) max (mW) ID
60V 26@VGS = 10V 4.2A
30@VGS = 4.5V 3.5A
lHigh frequency DC-DC converters
lLead-Free
Benefits
Applications
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
PD- 95280
IRF7478PbF
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 4.2A
QgTotal Gate Charge –– – 21 31 I D = 4.2A
Qgs Gate-to-Source Charge ––– 4.3 ––– nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– 9.6 ––– VGS = 4.5V
td(on) Turn-On Delay Time ––– 7.7 ––– VDD = 30V
trRise Time ––– 2.6 ––– ID = 4.2A
td(off) Turn-Off Delay Time ––– 44 ––– R G = 6.2Ω
tfFall Time ––– 13 ––– VGS = 10V
Ciss Input Capacitance ––– 1740 ––– VGS = 0V
Coss Output Capacitance ––– 300 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 37 – –– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1590 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 220 ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 410 ––– VGS = 0V, V DS = 0V to 48V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, I S = 4.2A, VGS = 0V
trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.2A
Qrr Reverse RecoveryCharge ––– 100 150 nC di/dt = 100A/µs
Diode Characteristics
2.3
56
A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 – –– –– – V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA
––– 20 26 VGS = 10V, ID = 4.2A
––– 23 30 VGS = 4.5V, ID = 3.5A
VGS(th) Gate Threshold Voltage 1 .0 ––– 3.0 V V DS = V GS, ID = 250µA
––– ––– 20 µA VDS = 48V, VGS = 0V
––– ––– 100 VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– – –– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 140 mJ
IAR Avalanche Current––– 4.2 A
IRF7478PbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
7.0A
2.5 3.0 3.5 4
.0
VGS, G ate-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = 25V
20µs PU LSE WI DTH
IRF7478PbF
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
010 20 30 40
0
2
4
6
8
10
Q , Total Gate Charg e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.2A
V = 12V
DS
V = 30V
DS
V = 48V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
1000
1 10 100 100
0
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source V oltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
110 100
VDS, Dr ain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7478PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25 50 75 100 125 15
0
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7478PbF
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 15
0
0
100
200
300
400
Start ing T , Junction Temperature ( C)
E , Singl e Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.9A
3.4A
4.2A
0 102030405060
ID , Drain Curr ent (A)
0.016
0.018
0.020
0.022
0.024
0.026
0.028
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 10V
VGS = 4.5V
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 7.0A
IRF7478PbF
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BA SIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BA SIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.25 5]
3X 1.27 [.050]
4. OUTLINE CONFORMS T O JEDEC OUTLINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHO WN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIO NS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIO NS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010] .
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006] .
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DE S IGNAT ES LEAD-F RE E
PROD UCT (OPTIONAL)
A = ASSEMB LY SITE CODE
IRF7478PbF
8www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 4.2A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O U TLIN E C O NFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TE RM I NAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLI METERS(INCHES).
3
. OUTLI NE CONF ORMS TO E IA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
